Patents Examined by Micheal Trinh
  • Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon
    Patent number: 7943463
    Abstract: A number of methods are provided for semiconductor processing. One such method includes depositing a first precursor material on a surface at a particular temperature to form an undoped polysilicon. The method also includes depositing a second precursor material on a surface of the undoped polysilicon at substantially the same temperature, wherein the undoped polysilicon serves as a seed to accelerate forming a doped polysilicon.
    Type: Grant
    Filed: April 2, 2009
    Date of Patent: May 17, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Anish Khandekar, Ervin T. Hill, Jixin Yu, Jeffrey B. Hull