Patents Examined by Mihh Loan Tran
  • Patent number: 6635951
    Abstract: An ultra-small electrode or plug contact for use in chalcogenide memory cells specifically, and in semiconductor devices generally. The ultra-small electrode is fabricated by a technique in which disposable spacers are utilized to fabricate ultra-small pores into which the electrodes are formed. The electrodes thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
    Type: Grant
    Filed: July 6, 2001
    Date of Patent: October 21, 2003
    Assignee: Micron Technology, Inc.
    Inventor: Russell C. Zahorik