Patents Examined by Min Hung
  • Vacancy-modulated conductive oxide resistive RAM device including an interfacial oxygen source layer
    Patent number: 9754665
    Abstract: A vacancy-modulated conductive oxide (VMCO) resistive random access memory (ReRAM) device includes at least one interfacial layer between a semiconductor portion and a titanium oxide portion of a resistive memory element. The at least one interfacial layer includes an oxygen reservoir that can store oxygen atoms during operation of the resistive memory element. The at least one interfacial layer can include an interfacial metal oxide layer, a metal layer, and optionally, a ruthenium layer.
    Type: Grant
    Filed: August 4, 2016
    Date of Patent: September 5, 2017
    Assignee: SANDISK TECHNOLOGIES LLC
    Inventors: Yangyin Chen, Christopher J. Petti, Kun Hou