Abstract: The present invention provides improved ion implantation systems and methods in which a high voltage probe is utilized in an ion implantation system to directly measure energy of an ion beam incident on a substrate. More particularly, an exemplary ion implantation system can include an ion source maintained at a high electric potential that generates ions, and a plurality of extraction electrodes that can accelerate the ions to a desired energy. The system further includes an end-station, maintained at ground electric potential, in which a wafer holding for positioning a wafer in the path of an ion beam is disposed. The ion implantation system is further characterized by a high energy probe disposed between a high voltage terminus of the ion source and ground for directly measuring the energy of the ions.