Abstract: An integrated circuit structure has a number of device areas each of which is configurable in a subsequent customizing process as a field effect transistor, a bipolar transistor or as a pair of those devices. Configuration of the structure is determined by correspondingly selective etching of a polysilicon layer disposed on the structure.

Abstract: A metal insulator semiconductor heterostructure laser emitting in the blue spectrum is formed by a substrate of n-type zinc selenide, zinc sulfoselenide (ZnSSe) and zinc manganese selenide (ZnMnSe); a confining layer of n-type zinc sulfoselenide, or zinc manganese selenide (ZnMnSe); an active layer of n-type zinc selenide or zinc sulfoselenide (ZnSSe) or zinc manganese selenide (ZnMnSe); a thin insulator layer and a top layer of reflective barrier metal stripes and thick insulating material. An applied potential with the metal stripes being positive injects minority holes into the active layer which combine with a n-type electron to produce photons. The barrier metal stripes and thin insulator layer combine to provide an inverted active layer surface which is instrumental in injecting minority holes. The generated photons are confined in the active layer by the barrier metal on one side and the confining layer on the other.

Abstract: An edge-coupled optoelectronic device is mounted in a TO-style package which comprises a substrate assembly, a circular header and a cylindrical cap. A substrate and an insulating cover of the substrate assembly extend through an opening of the circular header and are secured in that opening. The optoelectronic device is secured to the substrate at a device support location. Electrical conductors are wire-bonded at contacts of the optoelectronic device and at corresponding device contacts of the substrate assembly to electrically connect the contacts of the optoelectronic device to respective conductors of the substrate assembly. The cylindrical cap is secured onto the header over the optoelectronic device.

Abstract: An improved interdigitized leadframe strip having a pair of rail stubs coextensive with the exposed pins of the leadframes at either end of the strip, which can still be stamped from a continuous strip without any waste of material between the individual strips. The split rail stubs are still considerably wider than the exposed pins of the end leadframes and hence, offer considerable protection to the exposed pins from mechanical damage.