Abstract: The invention relates to a laser resonator for semiconductor lasers having a waveguiding layer which is disposed between a substrate and a superstrate, the waveguiding layer, the substrate and/or the superstrate of the laser resonator having at least one phase structure which varies locally in such a manner that at least one predetermined laser mode is influenced in its propagation characteristic.
Type:
Grant
Filed:
June 15, 2001
Date of Patent:
July 19, 2005
Assignee:
Fraunhofer-Gesellschaft Zur Foerderung der Angewandten Forschung E.V.