Abstract: A semiconductor light modulator for modulating incident light of a particular wavelength according to the invention includes a plurality of successively disposed, alternating p and n conductivity type semiconductor layers, each layer having substantially the same index of refraction and a thickness approximately equal to one-fourth an integer multiple of the wavelength of light to be modulated divided by the index of refraction of the layer, a p-type region extending through the successively disposed layers, an n-type region extending through the successively disposed layers and spaced from the p-type region, a first electrode disposed on and in electrical contact with the p-type region, and a second electrode disposed on and in electrical contact with the n-type region.

Abstract: A metal-semiconductor field effect transistor includes a substrate of a group III-V compound having a zinc blend structure. A gate electrode is provided on the substrate so as to extend in a predetermined direction and a channel region is defined in the substrate in alignment with the gate electrode. A source region is defined in the substrate at one side of the channel region and a drain region is defined in the substrate at the other side of the channel region. A source electrode is provided on the substrate so as to cover a first part of the source region spaced from the gate electrode while leaving a second part of the source region adjacent the gate electrode uncovered, and a drain electrode is also provided on the substrate so as to cover a first part of the drain region spaced from the gate electrode while leaving a second part of the drain region adjacent the gate electrode uncovered.