Patents Examined by Mitchell J. Franklin
  • Gettering process for semiconductor wafers
    Patent number: 4878988
    Abstract: A reduction in the number of impurities present in semiconductor wafers is obtained by gettering the impurities prior to mechanically lapping both wafer surfaces. Damage is created on both surfaces of the semiconductor wafer by the sawing of an ingot into many wafers. The impurities are then gettered to the damaged surfaces by subjecting the wafer to a high temperature. The subsequent lapping operation then removes the damaged regions along with the gettered impurities.
    Type: Grant
    Filed: October 3, 1988
    Date of Patent: November 7, 1989
    Assignee: Motorola, Inc.
    Inventors: James B. Hall, Martin G. Robinson, Ronald C. Swift