Patents Examined by Mohammad H Hoque
  • Semiconductor device and method for fabricating the same
    Patent number: 9972633
    Abstract: A semiconductor device including a logic transistor, a non-volatile memory (NVM) cell and a contact etching stop layer (CESL) is shown. The CESL includes a first silicon nitride layer on the logic transistor but not on the NVM cell, a silicon oxide layer on the first silicon nitride layer and on the NVM cell, and a second silicon nitride layer disposed on the silicon oxide layer over the logic transistor and disposed on the silicon oxide layer on the NVM cell.
    Type: Grant
    Filed: January 27, 2016
    Date of Patent: May 15, 2018
    Assignee: United Microelectronics Corp.
    Inventors: Hui Yang, Chow-Yee Lim