Abstract: The present invention relates to a new process for manufacturing a silicon carbide (SiC) coated body by depositing SiC in a chemical vapor deposition method using dimethyldichlorosilane (DMS) as the silane source on a graphite substrate. A further aspect of the present invention relates to the new silicon carbide coated body, which can be obtained by the new process of the present invention, and to the use thereof for manufacturing articles for high temperature applications, susceptors and reactors, semiconductor materials, and wafer.

Abstract: There are provided reactive metal powder in-flight heat treatment processes. For example, such processes comprise providing a reactive metal powder; and contacting the reactive metal powder with at least one additive gas while carrying out said in-flight heat treatment process, thereby obtaining a raw reactive metal powder.

Abstract: A pattern forming method capable of easily removing a discontinuous portion in a pattern while keeping resistance of the pattern low. A pattern forming method including at least a printing step of printing a pattern intermediate containing a conductive material on a base material 1, and a plating step of subjecting the pattern intermediate to an electroplating treatment, in which the pattern intermediate printed in the printing step has a plating target portion that is energized in the plating step and a discontinuous portion that is discontinuously formed from the plating target portion and is not energized in the plating step, and in the plating step, by performing an electric field plating treatment using a plating solution containing at least two or more types of metal salts containing different types of metals and a complexing agent, the discontinuous portion of the pattern intermediate is removed to form a pattern constituted by the plating target portion covered with a plating film.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor; introducing into the reactor at least one silicon-containing compound and at least one multifunctional organoamine compound to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon carbonitride coating has excellent mechanical properties.

Abstract: A patterned backside stress compensation film having different stress in different sectors is formed on a backside of a substrate to reduce combination warpage of the substrate. The film can be formed by employing a radio frequency electrode assembly including plurality of conductive plates that are biased with different RF power and cause local variations in the plasma employed to deposit the backside film. Alternatively, the film may be deposited with uniform stress, and some of its sectors are irradiated with ultraviolet radiation to change the stress of these irradiated sectors. Yet alternatively, multiple backside deposition processes may be sequentially employed to deposit different backside films to provide a composite backside film having different stresses in different sectors.

Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.

Abstract: Methods for selectively depositing on non-metallic surfaces are disclosed. Some embodiments of the disclosure utilize an unsaturated hydrocarbon to form a blocking layer on metallic surfaces. Deposition is performed to selectively deposit on the unblocked non-metallic surfaces. Some embodiments of the disclosure relate to methods of forming metallic vias with decreased resistance.

Abstract: The present invention provides a solvent composition for use in an ink for producing an electronic device using a printing method, the solvent composition being capable of improving the printing accuracy of the ink, being fired at low temperatures, and suppressing the amount of ash remaining after firing to a very low amount. The solvent composition for electronic device production of the present invention is for use in an ink for producing an electronic device by a printing method, and contains a miscible product of: a solvent and a compound represented by Formula (1) below. In Formula (1), R represents the same or different aliphatic hydrocarbon groups having 1 or more carbon atoms.

Abstract: Embodiments generally relate to methods for depositing silicon-phosphorous materials, and more specifically, relate to using silicon-phosphorous compounds in vapor deposition processes (e.g., epitaxy, CVD, or ALD) to deposit silicon-phosphorous materials. In one or more embodiments, a method for forming a silicon-phosphorous material on a substrate is provided and includes exposing the substrate to a deposition gas containing one or more silicon-phosphorous compounds during a deposition process and depositing a film containing the silicon-phosphorous material on the substrate. The silicon-phosphorous compound has the chemical formula [(R3-vHvSi)—(R2-wHwSi)n]xPHyR?z, where each instance of R and each instance of R? are independently an alkyl or a halogen, n is 0, 1, or 2; v is 0, 1, 2, or 3; w is 0, 1, or 2; x is 1, 2, or 3; y is 0, 1, or 2; z is 0, 1, or 2, and where x+y+z=3.

Abstract: Embodiments described herein relate generally to systems and methods for continuously and/or semi-continuously manufacturing semi-solid electrodes and batteries incorporating semi-solid electrodes. In some embodiments, the process of manufacturing a semi-solid electrode includes continuously dispensing a semi-solid electrode slurry onto a current collector, separating the semi-solid electrode slurry into discrete portions, and cutting the current collector to form a finished electrode.

Abstract: A method of molding a metalized composite part. The method comprises: introducing particles comprising at least one metal into a gas stream; directing the gas stream toward a surface of a thermoplastic composite part, thereby depositing a metal layer on the composite part to form a metallized composite part; and molding the metallized composite part to introduce a bend without delamination of the metal layer from the metallized composite part.

Abstract: A method for preparing a cathode active material is provided. The method for preparing a cathode active material can comprise the steps of: preparing a first metal oxide; preparing a second metal oxide having an oxygen ratio lower than that of the first metal oxide by heat treating the first metal oxide in a nitrogen-containing gas atmosphere; and preparing a lithium metal oxide by firing the second metal oxide and a lithium salt.

Abstract: A method for preparing an optically transparent, superomniphobic coating on a substrate, such as an optical substrate, is disclosed. The method includes providing a glass layer disposed on a substrate, the glass layer having a first side adjacent the substrate and an opposed second side, the glass layer comprising 45-85 wt. % silicon oxide in a first glass phase and 10-40 wt. % boron oxide in a second glass phase, such that a glass layer has a composition in a spinodal decomposition region. The method further includes heating the second side of the glass layer to form a phase-separated portion of the layer, the phase-separated portion comprising an interpenetrating network of silicon oxide domains and boron oxide domains, and removing at least a portion of the boron oxide domains from the phase-separated portion to provide a graded layer disposed on the substrate. The graded layer has a first side disposed adjacent the substrate, the first side comprising 45-85 wt. % silicon oxide and 10-40 wt.

Abstract: An electronic component manufacturing method includes a blotting process of bringing a conductive paste applied to an end portion of each electronic component body held by a jig into contact with a surface of a surface plate. The blotting process includes simultaneous performance of a distance changing process of changing the distance between an end face of each electronic component body and the surface of the surface plate and a position changing process of changing a two-dimensional position where the end face of the electronic component body is projected on the surface of the surface plate in such a manner that the direction of the movement of two-dimensional position in parallel to the surface of the surface plate successively varies (e.g., along a circular path).

Abstract: A method of modifying a high-resistivity substrate so that the substrate may be electrostatically clamped to a chuck is disclosed. The bottom surface is implanted with a resistivity-reducing species. In this way, resistivity of the bottom surface of the substrate may be greatly reduced. In some embodiments, to implant the bottom surface, a coating is applied to the top surface. After application of the coating, the substrate is flipped so that the front surface contacts the top surface of the chuck. The ions are then implanted into the exposed bottom surface to create the low resistivity layer. The resistivity of the low resistivity layer proximate the bottom surface after implant may be less than 1000 ohm-cm. Once the bottom surface has been implanted, the substrate may be processed conventionally. The low resistivity layer may later be removed by wafer backside thinning processes.

Abstract: Embodiments are described herein to reshape spacer profiles to improve spacer uniformity and thereby improve etch uniformity during pattern transfer associated with self-aligned multiple-patterning (SAMP) processes. For disclosed embodiments, cores are formed on a material layer for a substrate of a microelectronic workpiece. A spacer material layer is then formed over the cores. Symmetric spacers are then formed adjacent the cores by reshaping the spacer material layer using one or more directional deposition processes to deposit additional spacer material and using one or more etch process steps. For one example embodiment, one or more oblique physical vapor deposition (PVD) processes are used to deposit the additional spacer material for the spacer profile reshaping. This reshaping of the spacer profiles allows for symmetric spacers to be formed thereby improving etch uniformity during subsequent pattern transfer processes.

Abstract: One example of the disclosure provides a method of fabricating a chamber component with a coating comprising a yttrium containing material with desired film properties. In one example, the method of fabricating a coating material includes providing a base structure comprising an aluminum containing material. The method further includes forming a coating layer that includes a yttrium containing material on the base structure. The method also includes thermal treating the coating layer to form a treated coating layer.

Abstract: Systems and methods are disclosed that provide for pyrolysis reactions to be performed at reduced temperatures that convert non-conductive precursor polymers to conductive carbon suitable for use in electrode materials, which may be incorporated into a cathode, an electrolyte, and an anode, where the pyrolysis method may include one or more catalysts or reactive reagents.

Abstract: A method of forming a structure upon a substrate is disclosed. The method comprises: providing a substrate upon a surface of which a plurality of electrically conductive pads are disposed; depositing fluid containing a dispersion of electrically polarizable nanoparticles onto the substrate such that at least a portion of a first one of the plurality of pads is in contact with the fluid; applying an alternating electric field to the fluid using a first electrode and a second electrode, the first electrode being positioned so as to provide an effective first electrode end position from which the electric field is applied, coincident with the deposited fluid, and spaced apart from the first pad by a distance, and the second electrode being in contact with the first pad, such that a plurality of the nanoparticles are assembled to form a first elongate structure extending along at least part of the distance between the effective first electrode end position and the portion of the first pad.

Abstract: The present method includes graphene, preferably in the form of flat graphene oxide flakes with, by mass, preferably between 0.5% and 35% PAN. The graphene oxide and conductive-polymer PAN is in a co-suspension in water and is co-deposited on a surface. The deposited PAN with a high-percentage graphene-oxide layer is dried. Our tests have produced electrical conductivities 1000 times more conductive than the PAN by itself. Our testing indicates that using flakes that are flat is essential to getting very high conductivity, and that controlled oxidation is very important in suspending graphene oxide in water.