Patents Examined by Moriah S. Smoot
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Patent number: 11977335Abstract: A pattern decomposition method including following steps is provided. A target pattern is provided, wherein the target pattern includes first patterns and second patterns alternately arranged, and the width of the second pattern is greater than the width of the first pattern. Each of the second patterns is decomposed into a third pattern and a fourth pattern, wherein the third pattern and the fourth pattern have an overlapping portion, and a pattern formed by overlapping the third pattern and the fourth pattern is the same as the second pattern. The third patterns and the first pattern adjacent to the fourth pattern are designated as first photomask patterns of a first photomask. The fourth patterns and the first pattern adjacent to the third pattern are designated as second photomask patterns of a second photomask.Type: GrantFiled: June 21, 2021Date of Patent: May 7, 2024Assignee: United Microelectronics Corp.Inventors: Min Cheng Yang, Wei Cyuan Lo, Yung-Feng Cheng
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Patent number: 11966163Abstract: An imprinting photomask including: a transparent substrate; a light blocking pattern provided on the transparent substrate; and a dry film resist (DFR) pattern provided on the light blocking pattern.Type: GrantFiled: April 2, 2019Date of Patent: April 23, 2024Assignee: LG CHEM, LTD.Inventors: Yong Goo Son, Seung Heon Lee, Nam Seok Bae
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Patent number: 11947262Abstract: The processing of radiation patternable organometallic coatings is shown to be improved through the appropriate selection of post processing conditions between coating and development of the pattern. In particular, a coated wafer can be subjected to process delays to allow aging of the coating at various process points, in particular following irradiation. Process delays can be combined and interspersed with heating steps. The atmosphere above the coated wafer at various process steps can be adjusted to obtain desired improvements in the development of the pattern. Reactive gases can be beneficial with respect to improvement of coating properties.Type: GrantFiled: March 1, 2021Date of Patent: April 2, 2024Assignee: Inpria CorporationInventors: Alan J. Telecky, Jason K. Stowers, Douglas A. Keszler, Stephen T. Meyers, Peter de Schepper, Sonia Castellanos Ortega, Michael Greer, Kirsten Louthan
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Patent number: 11947261Abstract: A method of making photolithography mask plate is provided. The method includes: providing a carbon nanotube layer on a substrate; depositing a chrome layer on the carbon nanotube layer, wherein the chrome layer includes a first patterned chrome layer and a second patterned chrome layer, the first patterned chrome layer is located on the carbon nanotube layer, and the second patterned chrome layer is deposited on the substrate corresponding to holes of the carbon nanotube layer; transferring the carbon nanotube layer with the first patterned chrome layer thereon from the substrate to a base, and the carbon nanotube layer being in contact with the base; and depositing a cover layer on the first patterned chrome layer.Type: GrantFiled: January 15, 2021Date of Patent: April 2, 2024Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
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Patent number: 11940725Abstract: A blankmask for EUV lithography includes a substrate, a reflective layer, a capping layer, and a phase shift layer. The phase shift layer is made of a material containing ruthenium (Ru) and chromium (Cr), and a total content of ruthenium (Ru) and chromium (Cr) is 50 to 100 at %. The phase shift layer may further contain boron (B) or nitrogen (N). The phase shift layer of the present invention has a high relative reflectance (relative reflectance with respect to a reflectance of the reflective layer under the phase shift layer) with respect to a tantalum (Ta)-based phase shift layer and has a phase shift amount of 170 to 230°. It is possible to obtain excellent resolution when finally manufacturing a pattern of 7 nm or less by using a photomask manufactured using such a blankmask.Type: GrantFiled: December 6, 2021Date of Patent: March 26, 2024Assignee: S&S Tech Co., Ltd.Inventors: Cheol Shin, Yong-Dae Kim, Jong-Hwa Lee, Chul-Kyu Yang, Min-Kwang Park, Mi-Kyung Woo
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Patent number: 11914289Abstract: The present invention refers to a method for determining an effect of one or more of pixels to be introduced into a substrate of a photolithographic mask, the photolithographic mask having one or more pattern elements, wherein the one or more pixels serve to at least partly correct one or more errors of the photolithographic mask, the method comprising: determining the effect of the one or more introduced pixels by determining a change in birefringence of the substrate of the photolithographic mask having the one or more pattern elements.Type: GrantFiled: January 4, 2021Date of Patent: February 27, 2024Assignee: Carl Zeiss SMS Ltd.Inventors: Joachim Welte, Uri Stern, Kujan Gorhad, Vladimir Dmitriev
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Patent number: 11914285Abstract: The present invention provides an FPD pellicle frame body in which external color is controlled so as to make it easy to prevent scattering of exposure light, to perform the foreign object non-adhesion inspection before use, and the like, and a method for manufacturing the frame body efficiently. The FPD pellicle frame body of the present invention comprises: a stainless-steel member having a transparent oxide coating, and a film thickness of the transparent oxide coating being 420 nm to 700 nm. It is preferable that a brightness index L* due to the interference color of the reflected lights from the surface of the transparent oxide coating and the surface of the stainless-steel member is 33 or less.Type: GrantFiled: August 23, 2019Date of Patent: February 27, 2024Assignee: NIPPON LIGHT METAL COMPANY, LTD.Inventors: Naoto Komura, Koichi Nakano, Akira Iizuka
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Patent number: 11892768Abstract: Provided is a reflective mask blank that can reduce the shadowing effect of a reflective mask and form a fine and high-precision absorbent body pattern.Type: GrantFiled: August 8, 2019Date of Patent: February 6, 2024Assignee: HOYA CORPORATIONInventors: Mizuki Kataoka, Yohei Ikebe
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Patent number: 11874595Abstract: Some embodiments include a reticle which includes first pattern features and second pattern features. A first optimal dose of actinic radiation is associated with the first pattern features and a second optimal dose of the actinic radiation is associated with the second pattern features. The second pattern features are larger than the first pattern features. Each of the second pattern features has a configuration which includes a central region laterally surrounded by an outer region, with the central region being of different opacity than the outer region. The configurations of the second pattern features balance the second optimal dose of the actinic radiation to be within about 5% of the first optimal dose of the actinic radiation. Some embodiments include photo-processing methods.Type: GrantFiled: January 28, 2021Date of Patent: January 16, 2024Assignee: Micron Technology, Inc.Inventors: Chung-Yi Lee, Reha M. Bafrali
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Patent number: 11852972Abstract: A photoresist composition, comprising an acid-sensitive polymer comprising a repeating unit having an acid-labile group; an iodonium salt comprising an anion and a cation, the iodonium salt having Formula (1): wherein Z? is an organic anion; Ar1 is substituted or unsubstituted C4-60 heteroaryl group comprising a furan heterocycle; and R1 is substituted or unsubstituted hydrocarbon group as provided herein, wherein the cation optionally comprises an acid-labile group, wherein Ar1 and R1 are optionally connected to each other via a single bond or one or more divalent linking groups to form a ring, and wherein the iodonium salt is optionally covalently bonded through Ar1 or substituent thereof as a pendant group to a polymer, the iodonium salt is optionally covalently bonded through R1 or substituent thereof as a pendant group to a polymer, or the iodonium salt is optionally covalently bonded through Z? as a pendant group to a polymer; and a solvent.Type: GrantFiled: October 30, 2020Date of Patent: December 26, 2023Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Tomas Marangoni, Emad Aqad, James W. Thackeray, James F. Cameron, Xisen Hou, ChoongBong Lee
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Patent number: 11852968Abstract: To provide a pellicle in which outgas from an adhesive layer is suppressed. The pellicle includes a pellicle film, a support frame for supporting the pellicle film, a protrusion part arranged in the support frame, a first adhesive layer arranged on the protrusion part; and an inorganic material layer arranged at a position closer to the pellicle film than the first adhesive layer. The inorganic material layer may include a first inorganic material layer arranged at a first side surface of the first adhesive layer, the first side surface of the first adhesive layer intersecting the pellicle film, and arranged at a position closer to the pellicle film.Type: GrantFiled: September 3, 2020Date of Patent: December 26, 2023Assignee: MITSUI CHEMICALS, INC.Inventors: Yosuke Ono, Kazuo Kohmura, Atsushi Okubo, Daiki Taneichi, Hisako Ishikawa, Tsuneaki Biyajima
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Patent number: 11822245Abstract: A resist composition comprising a base polymer and a quencher containing a compound having the formula (A) is provided.Type: GrantFiled: March 10, 2021Date of Patent: November 21, 2023Assignee: SHIN-ETSU CHEMICAL CO., LTD.Inventors: Jun Hatakeyama, Tomomi Watanabe
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Patent number: 11762294Abstract: A photoresist underlayer composition, comprising a polymer comprising a repeating unit of formula (1): wherein Ar is a monocyclic or polycyclic C5-60 aromatic group, wherein the aromatic group comprises one or more aromatic ring heteroatoms, a substituent group comprising a heteroatom, or a combination thereof; R1 is hydrogen, substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2-30 heterocycloalkyl, substituted or unsubstituted C2-30 alkenyl, substituted or unsubstituted C2-30 alkynyl, substituted or unsubstituted C6-30 aryl, substituted or unsubstituted C7-30 arylalkyl, substituted or unsubstituted C7-30 alkylaryl, substituted or unsubstituted C3-30 heteroaryl, or substituted or unsubstituted C4-30 heteroarylalkyl; and R2 is substituted or unsubstituted C1-30 alkyl, substituted or unsubstituted C1-30 heteroalkyl, substituted or unsubstituted C3-30 cycloalkyl, substituted or unsubstituted C2Type: GrantFiled: August 31, 2020Date of Patent: September 19, 2023Assignee: ROHM AND HAAS ELECTRONIC MATERIALS LLCInventors: Joshua Kaitz, Sheng Liu, Li Cui, Shintaro Yamada, Suzanne M. Coley, Iou-Sheng Ke
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Patent number: 11747730Abstract: A method of making photolithography mask plate is provided. The method includes: providing a chrome layer on a substrate; depositing a carbon nanotube layer on the chrome layer to expose a part of a surface of the chrome layer; etching the chrome layer with the carbon nanotube layer as a mask to obtain a patterned chrome layer; and depositing a cover layer on the carbon nanotube layer.Type: GrantFiled: January 8, 2021Date of Patent: September 5, 2023Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.Inventors: Mo Chen, Qun-Qing Li, Li-Hui Zhang, Yuan-Hao Jin, Dong An, Shou-Shan Fan
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Patent number: 11720014Abstract: The phase shift film has a function to transmit an exposure light of a KrF excimer laser at a transmittance of 2% or more, and a function to generate a phase difference of 150 degrees or more and 210 degrees or less between the exposure light transmitted through the phase shift film and the exposure light transmitted through the air for a same distance as a thickness of the phase shift film, in which the phase shift film has a structure where a lower layer and an upper layer are stacked in order from a side of the transparent substrate, in which a refractive index nL of the lower layer at a wavelength of the exposure light and a refractive index nU of the upper layer at a wavelength of the exposure light satisfy a relation of nL>nU, in which an extinction coefficient kL of the lower layer at a wavelength of the exposure light and an extinction coefficient kU of the upper layer at a wavelength of the exposure light satisfy a relation of kL>kU; and in which a thickness dL of the lower layer and a thicknesType: GrantFiled: February 6, 2020Date of Patent: August 8, 2023Assignee: HOYA CORPORATIONInventors: Hitoshi Maeda, Osamu Nozawa, Hiroaki Shishido
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Patent number: 11675271Abstract: A resist underlayer composition includes a polymer including a structural unit represented by Chemical Formula 1, and a solvent. A method of forming patterns uses the resist underlayer composition under a photoresist pattern to enhance the sensitivity of the photoresist to an exposure light source, thereby providing enhanced resolution and faster processing times.Type: GrantFiled: January 20, 2021Date of Patent: June 13, 2023Assignee: Samsung SDI Co., Ltd.Inventors: Jaeyeol Baek, Soonhyung Kwon, Minsoo Kim, Hyeon Park, Shinhyo Bae, Daeseok Song, Yoojeong Choi