Patents Examined by N. Kelly
  • Multilayer quadruple gate field effect transistor structure for use in integrated circuit devices
    Patent number: 5936280
    Abstract: A quadruple gate field effect transistor (FET) is provided on the semiconductor-on-insulator or semiconductor-on-insulator (SOI) structure or a bulk semiconductor structure. The silicon substrate is surrounded by a polysilicon material on at least three sides to form a gate. Additionally, the substrate can be surrounded by a fourth side to form a quadruple gate structure. The SOI structure can be comprised of two layers of SOI structures. Interlayer vias can be provided to connect each layer of the two-layer structure.
    Type: Grant
    Filed: April 21, 1997
    Date of Patent: August 10, 1999
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Yowjuang William Liu