Abstract: A semiconductor chip 10 is provided to form a large number of cells constituting transistor units arranged on a planar and rectangular semiconductor substrate. On the front surface of the semiconductor chip 10, an emitter electrode 1 to be connected to an emitter and a base electrode 2 to be connected to an base are formed and electrode pads 1a and 2a of the emitter electrode 1 and the base electrode 2 are formed on opposite long sides of the rectangular substrate. On the rear surface of the semiconductor chip 10, a collector electrode 3 to be connected to a collector is formed. The semiconductor chip 10 is bonded to a rectangular island 6a at the tip of a third lead 6. A first lead 4 and a second lead 5 are directly connected to the emitter electrode pad 1a and base electrode pad 2a, respectively.