Patents Examined by Nagn V. Ngo
  • Avalanche photo-diode for producing sharp pulse signal
    Patent number: 5406097
    Abstract: An avalanche photo-diode in the InP-InGaAs-InGaAsP system has a thin main photo-absorbing layer for converting light into carriers, and an auxiliary photo-absorbing layer and a protection layer are provided under the main photo-absorbing structure for absorbing residue of the light without attracting toward electrodes, thereby producing an photo-detecting signal with a sharp trailing edge.
    Type: Grant
    Filed: December 6, 1993
    Date of Patent: April 11, 1995
    Assignee: NEC Corporation
    Inventor: Atsuhiko Kusakabe