Abstract: A display device includes a plurality of pixels disposed on a substrate, in which each pixel includes a first subpixel, a second subpixel adjacent to the first subpixel, and a third subpixel adjacent to the second subpixel, the second subpixel disposed between the first subpixel and the third subpixel. A first color filter is disposed in the first subpixel, and is configured to emit light having a first color, a second color filter is disposed in the second subpixel, and is configured to emit light having a second color, and a third color filter is disposed in the third subpixel, and is configured to emit light having a third color. Further, an upper surface of the second color filter is disposed a greater distance from the substrate than an upper surface of the first color filter.

Abstract: A device includes a substrate, a first nanostructure channel above the substrate and a second nanostructure channel between the first nanostructure channel and the substrate. An inner spacer is between the first nanostructure channel and the second nanostructure channel. A gate structure abuts the first nanostructure channel, the second nanostructure channel and the inner spacer. A liner layer is between the inner spacer and the gate structure.

Abstract: One or more systems, devices, and/or methods of fabrication provided herein relate to isolated self-aligned super vias. According to one embodiment, a super via device can comprise a super via structure, a metallic line and a dielectric fill material located between the sidewalls of the super via structure and the metallic line.

Abstract: A method of manufacturing a display device includes: a liquid-repelling bank formation step of forming a liquid-repellent bank containing a liquid-repelling material that repels a coating liquid; a functional layer formation step of forming a functional layer in a region including an area surrounded by the liquid-repellent bank by applying the coating liquid to the area; and a removal step of, subsequent to the functional layer formation step, removing at least a part of the liquid-repellent bank.

Abstract: The application discloses a display panel and a mobile terminal; the display panel includes a substrate, a light emission layer, a first refractive index layer, and a second refractive index layer, and the first refractive index layer includes multiple openings corresponding to multiple the luminescent pixels, and the second refractive index layer fills in the multiple openings, and the refractive index the second refractive index layer is greater than the refractive index of the first refractive index layer, and orthographic projections of the luminescent pixels cast on the first refractive index layer are located in the openings, and the areas of the openings to which luminescent pixels of different luminescent colors correspond are different.

Abstract: A resin-sealed semiconductor device is configured in such a way that a second bonding material has a melting point higher than that of a first bonding material made of a solder-bonding material, in such a way that one of bonding surfaces through which a power module and a cooling device are bonded to each other with the first bonding material is the other surface portion of a copper plate, and the other one of the bonding surfaces is the surface portion, at the power module side, of the cooling device, and in such a way that the surface portion, at the power module side, of the cooling device is formed of copper or metal having solder wettability the same as or higher than solder wettability of copper.

Abstract: A method of forming a three-dimensional memory device includes forming an alternating stack of insulating layers and sacrificial material layers, forming memory openings through the alternating stack, forming memory opening fill structures in the memory openings, forming a first support opening and a second support opening through the alternating stack, laterally expanding the first support opening without expanding the second support opening, forming a first dielectric support pillar structure and a second dielectric support pillar structure in the laterally-expanded first support opening and in the second support opening, respectively, and replacing the sacrificial material layers with electrically conductive layers. Each of the memory opening fill structures includes vertical semiconductor channel and a respective vertical stack of memory elements.

Abstract: A display device includes a display panel, a sensor layer on the display panel, and a light control layer on the sensor layer. The display panel includes a first pixel area emitting a first light and a second pixel area emitting a second light having a light emission wavelength different from a light emission wavelength of the first light, a light emitting element on a base substrate, and an encapsulation layer on the light emitting element. The light control layer includes a high refractive pattern that overlaps the first pixel area, does not overlap the second pixel area, and includes a first colorant, and an overcoat layer covering the high refractive pattern and overlapping the first pixel area and the second pixel area. A refractive index of the high refractive pattern is higher than a refractive index of the overcoat layer.

Abstract: Resistors and method of forming the same are provided. A device structure according to the present disclosure includes a substrate, a first intermetal dielectric (IMD) layer over the substrate, a resistor that includes a first resistor layer over the first IMD layer, a second resistor layer over the first resistor layer, and a third resistor layer over the second resistor layer, a second IMD layer over the first IMD layer and the resistor, a first contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer, and a second contact via extending through the second IMD layer and the third resistor layer and terminating in the first resistor layer.

Abstract: Provided is a display device including a base layer on which a pixel region, a sensor region, and a peripheral region adjacent to the pixel region and the sensor region are defined, an element layer including a light emitting element having a light emitting layer disposed in the pixel region, and including a light sensing element having a photoelectric conversion layer disposed in the sensor region, a light blocking pattern disposed on the element layer and overlapping a portion of the peripheral region, and an optical pattern disposed on the light blocking pattern, wherein at least a portion of the optical pattern overlaps the photoelectric conversion layer on a plane. Accordingly, the display device of an embodiment may sense the biometric information of a user more precisely.

Abstract: A display panel includes a substrate, a first semiconductor layer, an insulating isolation layer, a photosensitive layer, a second semiconductor layer and a light-emitting layer. The first semiconductor layer includes a first electrode in a non-light-emitting area. The insulating isolation layer includes a first opening disposed corresponding to the first electrode. The second semiconductor layer includes a second electrode disposed corresponding to the first opening. A photosensitive portion is provided between the first electrode and the second electrode and connected to both of them.

Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: A display panel includes a base substrate and a display structure layer disposed on the base substrate, wherein the display structure layer includes a plurality of sub-pixels. At least one sub-pixel includes: a pixel circuit and a light emitting element electrically connected with the pixel circuit. The light emitting element includes a first light emitting unit and a second light emitting unit. A light emitting region of the first light emitting unit and a light emitting region of the second light emitting unit are isolated from each other. The pixel circuit is configured to drive at least one of the first light emitting unit and the second light emitting unit to emit light in the anti-peep display mode.

Abstract: A light emitting device, a display substrate and a display device, relate to the technical field of displaying. The light emitting device including: a plurality of luminescent layers, wherein each of the plurality of luminescent layers includes at least one subject sublayer and at least one object sublayer, and the at least one subject sublayer and the at least one object sublayer are disposed alternately; wherein thicknesses of at least a part of subject sublayers are greater than or equal to a thickness of the object sublayer. The concentration quenching phenomenon of the luminescent layer in the light emitting device is improved, the luminous efficiency is improved, and the service life of the device is extended.

Abstract: A display panel includes a display substrate, a lens layer and a dimming layer. The display substrate includes a plurality of sub-pixels, and each sub-pixel has a light-emitting region. The lens layer is disposed on a side of a light-exiting surface of the display substrate and includes a plurality of lens pattern regions each opposite to a light-emitting region of a sub-pixel, and the light-emitting region of the sub-pixel at least partially overlaps with an orthogonal projection of the lens pattern region opposite thereto on the display substrate. Each lens pattern region is provided with a plurality of notches therein. The dimming layer is disposed on a side of the lens layer away from the display substrate, and at least a portion of the dimming layer is filled in the plurality of notches. A refractive index of the dimming layer is greater than a refractive index of the lens layer.

Abstract: A method of forming a staircase structure in a semiconductor device includes forming primary terrace patterns in an alternating stack, repeating a respective anisotropic etch process that etches unmasked portions of the alternating stack and a respective mask trimming process to form additional terrace patterns, determining if the respective mask trimming process trimmed the mask within a desired distance range using the primary terrace patterns in the staircase structure as alignment marks, and forming layer contact via structures which contact electrically conductive layers in the primary terrace patterns and the additional terrace patterns.

Abstract: Embodiments of the present disclosure relate to a display panel and a display device. The display panel includes a backplate including a plurality of pixel areas and a plurality of recesses configured to separate the plurality of pixel areas from each other, and a plurality of first electrodes on the backplate, wherein orthographic projections of the plurality of first electrodes on the backplate partially overlaps with the plurality of pixel areas, respectively, and wherein at least one of the plurality of first electrodes extends to a bottom surface of the recesses neighboring to the first electrodes.

Abstract: A semiconductor device may include: a substrate; a lower pattern extending from the substrate in a first direction; a channel pattern disposed on the lower pattern; a source/drain pattern disposed on sides of the channel pattern; a first gate structure and a second gate structure extending in a second direction intersecting the first direction and surrounding respective portions of the channel pattern; and a separation structure disposed between the first gate structure and the second gate structure, and including a first portion extending in the first direction and a second portion protruding from the first portion toward the channel pattern, wherein the first gate structure includes first and second conductive patterns stacked sequentially from the respective portion of the channel pattern, and a length of the second conductive pattern in the second direction is equal to or greater than a length of the second portion in the second direction.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.