Abstract: Exemplary subpixel structures include a directional light-emitting diode structure characterized by a full-width-half-maximum (FWHM) of emitted light having a divergence angle of less than or about 10°. The subpixel structure further includes a lens positioned a first distance from the light-emitting diode structure, where the lens is shaped to focus the emitted light from the light-emitting diode structure. The subpixel structure still further includes a patterned light absorption barrier positioned a second distance from the lens. The patterned light absorption barrier defines an opening in the barrier, and the focal point of the light focused by the lens is positioned within the opening. The subpixels structures may be incorporated into a pixel structure, and pixel structures may be incorporated into a display that is free of a polarizer layer.

Abstract: A display panel includes a base substrate and a display structure layer disposed on the base substrate, wherein the display structure layer includes a plurality of sub-pixels. At least one sub-pixel includes: a pixel circuit and a light emitting element electrically connected with the pixel circuit. The light emitting element includes a first light emitting unit and a second light emitting unit. A light emitting region of the first light emitting unit and a light emitting region of the second light emitting unit are isolated from each other. The pixel circuit is configured to drive at least one of the first light emitting unit and the second light emitting unit to emit light in the anti-peep display mode.

Abstract: A light emitting device, a display substrate and a display device, relate to the technical field of displaying. The light emitting device including: a plurality of luminescent layers, wherein each of the plurality of luminescent layers includes at least one subject sublayer and at least one object sublayer, and the at least one subject sublayer and the at least one object sublayer are disposed alternately; wherein thicknesses of at least a part of subject sublayers are greater than or equal to a thickness of the object sublayer. The concentration quenching phenomenon of the luminescent layer in the light emitting device is improved, the luminous efficiency is improved, and the service life of the device is extended.

Abstract: A display panel includes a display substrate, a lens layer and a dimming layer. The display substrate includes a plurality of sub-pixels, and each sub-pixel has a light-emitting region. The lens layer is disposed on a side of a light-exiting surface of the display substrate and includes a plurality of lens pattern regions each opposite to a light-emitting region of a sub-pixel, and the light-emitting region of the sub-pixel at least partially overlaps with an orthogonal projection of the lens pattern region opposite thereto on the display substrate. Each lens pattern region is provided with a plurality of notches therein. The dimming layer is disposed on a side of the lens layer away from the display substrate, and at least a portion of the dimming layer is filled in the plurality of notches. A refractive index of the dimming layer is greater than a refractive index of the lens layer.

Abstract: A method of forming a staircase structure in a semiconductor device includes forming primary terrace patterns in an alternating stack, repeating a respective anisotropic etch process that etches unmasked portions of the alternating stack and a respective mask trimming process to form additional terrace patterns, determining if the respective mask trimming process trimmed the mask within a desired distance range using the primary terrace patterns in the staircase structure as alignment marks, and forming layer contact via structures which contact electrically conductive layers in the primary terrace patterns and the additional terrace patterns.

Abstract: Embodiments of the present disclosure relate to a display panel and a display device. The display panel includes a backplate including a plurality of pixel areas and a plurality of recesses configured to separate the plurality of pixel areas from each other, and a plurality of first electrodes on the backplate, wherein orthographic projections of the plurality of first electrodes on the backplate partially overlaps with the plurality of pixel areas, respectively, and wherein at least one of the plurality of first electrodes extends to a bottom surface of the recesses neighboring to the first electrodes.

Abstract: A semiconductor device may include: a substrate; a lower pattern extending from the substrate in a first direction; a channel pattern disposed on the lower pattern; a source/drain pattern disposed on sides of the channel pattern; a first gate structure and a second gate structure extending in a second direction intersecting the first direction and surrounding respective portions of the channel pattern; and a separation structure disposed between the first gate structure and the second gate structure, and including a first portion extending in the first direction and a second portion protruding from the first portion toward the channel pattern, wherein the first gate structure includes first and second conductive patterns stacked sequentially from the respective portion of the channel pattern, and a length of the second conductive pattern in the second direction is equal to or greater than a length of the second portion in the second direction.

Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a substrate, a first conductive line, a first conductive via, a second conductive line, and a first barrier layer. The first conductive line is disposed on the substrate. The first conductive via is disposed on the first conductive line. The second conductive line is disposed on the first conductive line. The first barrier layer is disposed between the first conductive via and the second conductive line.

Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: Embodiments of the present disclosure provide a display substrate and a display apparatus. The display substrate has a display region and a peripheral region around the display region. The display substrate includes a substrate, a first voltage signal transmission structure and a light-emitting device layer that are arranged in sequence. The light-emitting device layer includes an anode layer and a cathode layer, and the anode layer is closer to the substrate than the cathode layer. The first voltage signal transmission structure is configured to transmit a first voltage signal to the cathode layer. The first voltage signal transmission structure includes a first portion located in the display region and a second portion located in the peripheral region, and the first portion is electrically connected to the second portion.

Abstract: A display device includes a substrate, a first pixel and a second pixel. Each of the first pixel and the second pixel includes first, second and third light emitting areas. The second light emitting area is disposed adjacent to the first light emitting area in a first direction, and the third light emitting area is disposed adjacent to the first light emitting area in a second direction. The first light emitting area included in the first pixel and the first light emitting area included in the second pixel emit light of different colors, the second light emitting area included in the first pixel and the second light emitting area included in the second pixel emit light of different colors, and the third light emitting area included in the first pixel and the third light emitting area included in the second pixel emit light of different colors.

Abstract: A display apparatus includes first to fourth pixels. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first layer contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer. The first to fourth light-emitting device provide the same emission spectrum as each other.

Abstract: Provided is the following: a resin substrate layer; a thin-film transistor layer provided on the resin substrate layer, and having a stack of, in sequence, a gate insulating film, an interlayer insulating film, and a flattening film; and a light-emitting element layer provided on the thin-film transistor layer, with a plurality of first electrodes, a common edge cover that is common, a plurality of light-emitting function layers, and a second electrode that is common being stacked sequentially in correspondence with a plurality of subpixels constituting a display region. A non-display region that is in the form of an island within the display region has a through-hole. The non-display region includes a first light-blocking film provided on the periphery of the flattening film so as to cover the side wall of the periphery.

Abstract: A semiconductor device includes a substrate, a plurality of memory arrays and a plurality of capacitors. The substrate includes a plurality of memory array regions. Each memory array region includes a plurality of memory blocks and a plurality of dummy blocks. The dummy blocks are located along a boundary of the memory blocks. The plurality of memory arrays are disposed in the plurality of memory blocks. The plurality of capacitors are disposed in the plurality of dummy blocks along the boundary of the plurality of memory blocks. The plurality of memory arrays may include 3D NAND flash memories with high capacity and high performance.

Abstract: A light emitting display apparatus can include a thin film transistor (TFT) substrate and a color filter substrate. The TFT substrate can include a plurality of pixels, where each pixel includes an emission region and a non-emission region. The color filter substrate can include an upper substrate opposite to the TFT substrate, a color filter layer on the upper substrate, and a black matrix dividing the color filter layer. The black matrix can have an eaves structure.

Abstract: A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer. The conductive structure is surrounded by the spacer structure. The semiconductor device structure further includes a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure. The liner layer has a tapered sidewall in direct contact with the first dielectric layer.

Abstract: A display device comprises pixel electrodes disposed on a substrate and spaced apart from one another, a pixel-defining film disposed on the substrate and including openings, which are spaced apart from one another and overlap the pixel electrodes, organic light-emitting layers disposed in the openings of the pixel-defining film, a common electrode disposed between the pixel-defining film and the organic light-emitting layers, an encapsulation layer disposed on the common electrode, a light-blocking layer disposed on the encapsulation layer and including holes, which overlap the openings and are spaced apart from one another, and color filters disposed in the holes of the light-blocking layer and overlapping the openings. Sides of each of the openings have concave-convex patterns including convex portions that protrude outwardly and concave portions that are inwardly depressed. The color filters are disposed to partially overlap one another on the light-blocking layer.

Abstract: A display panel, a manufacturing method thereof, and an electronic device are provided. The display panel includes a substrate, first electrodes, a pixel definition layer, light-emitting layers, and light-reflecting layers. In the present application, light-reflecting layers are provided in one of the pixel openings, the light-reflecting layer can reflect the light emitted by the light-emitting layers to the pixel definition layer so that the light emitted by the light-emitting layers is concentrated in the middle, which improves the light utilization rate of the light-emitting layers. Therefore, the technical problem of low luminous utilization efficiency of light-emitting pixels in the current OLED structure is alleviated.

Abstract: A display device includes a first and second pixel electrode. An inorganic insulating layer is partially disposed on the first and second pixel electrode. A bank structure is disposed on the inorganic insulating layer and includes a first opening overlapping the first pixel electrode and a second opening overlapping the second pixel electrode. First and second light emitting layers are disposed on the first and second pixel electrodes. First and second common electrodes are disposed on the first and second light emitting layers. A light blocking layer is disposed on the bank structure and includes a first opening hole overlapping the first opening and a second opening hole overlapping the second opening. First and second color filters are disposed in the first and second openings.

Abstract: A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer. The conductive structure is surrounded by the spacer structure. The semiconductor device structure further includes a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure. The liner layer has a tapered sidewall in direct contact with the first dielectric layer.