Abstract: A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.

Abstract: Embodiments of the present disclosure provide a display substrate and a display apparatus. The display substrate has a display region and a peripheral region around the display region. The display substrate includes a substrate, a first voltage signal transmission structure and a light-emitting device layer that are arranged in sequence. The light-emitting device layer includes an anode layer and a cathode layer, and the anode layer is closer to the substrate than the cathode layer. The first voltage signal transmission structure is configured to transmit a first voltage signal to the cathode layer. The first voltage signal transmission structure includes a first portion located in the display region and a second portion located in the peripheral region, and the first portion is electrically connected to the second portion.

Abstract: A display device includes a substrate, a first pixel and a second pixel. Each of the first pixel and the second pixel includes first, second and third light emitting areas. The second light emitting area is disposed adjacent to the first light emitting area in a first direction, and the third light emitting area is disposed adjacent to the first light emitting area in a second direction. The first light emitting area included in the first pixel and the first light emitting area included in the second pixel emit light of different colors, the second light emitting area included in the first pixel and the second light emitting area included in the second pixel emit light of different colors, and the third light emitting area included in the first pixel and the third light emitting area included in the second pixel emit light of different colors.

Abstract: A display apparatus includes first to fourth pixels. The first pixel includes a first light-emitting device and a first layer. The first light-emitting device emits first light toward the first layer. An emission spectrum of the first light has an intensity in a blue-light wavelength range and an intensity in a green-light wavelength range. The first layer contains a color conversion material converting blue and green light into red light. The second pixel includes a second light-emitting device and a second layer. The second layer has a function of transmitting blue light. The third pixel includes a third light-emitting device and a third layer. The third layer has a function of absorbing blue light and transmitting green light. The fourth pixel includes a fourth light-emitting device and a fourth layer. The first to fourth light-emitting device provide the same emission spectrum as each other.

Abstract: Provided is the following: a resin substrate layer; a thin-film transistor layer provided on the resin substrate layer, and having a stack of, in sequence, a gate insulating film, an interlayer insulating film, and a flattening film; and a light-emitting element layer provided on the thin-film transistor layer, with a plurality of first electrodes, a common edge cover that is common, a plurality of light-emitting function layers, and a second electrode that is common being stacked sequentially in correspondence with a plurality of subpixels constituting a display region. A non-display region that is in the form of an island within the display region has a through-hole. The non-display region includes a first light-blocking film provided on the periphery of the flattening film so as to cover the side wall of the periphery.

Abstract: A light emitting display apparatus can include a thin film transistor (TFT) substrate and a color filter substrate. The TFT substrate can include a plurality of pixels, where each pixel includes an emission region and a non-emission region. The color filter substrate can include an upper substrate opposite to the TFT substrate, a color filter layer on the upper substrate, and a black matrix dividing the color filter layer. The black matrix can have an eaves structure.

Abstract: A semiconductor device includes a substrate, a plurality of memory arrays and a plurality of capacitors. The substrate includes a plurality of memory array regions. Each memory array region includes a plurality of memory blocks and a plurality of dummy blocks. The dummy blocks are located along a boundary of the memory blocks. The plurality of memory arrays are disposed in the plurality of memory blocks. The plurality of capacitors are disposed in the plurality of dummy blocks along the boundary of the plurality of memory blocks. The plurality of memory arrays may include 3D NAND flash memories with high capacity and high performance.

Abstract: A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer. The conductive structure is surrounded by the spacer structure. The semiconductor device structure further includes a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure. The liner layer has a tapered sidewall in direct contact with the first dielectric layer.

Abstract: A display device comprises pixel electrodes disposed on a substrate and spaced apart from one another, a pixel-defining film disposed on the substrate and including openings, which are spaced apart from one another and overlap the pixel electrodes, organic light-emitting layers disposed in the openings of the pixel-defining film, a common electrode disposed between the pixel-defining film and the organic light-emitting layers, an encapsulation layer disposed on the common electrode, a light-blocking layer disposed on the encapsulation layer and including holes, which overlap the openings and are spaced apart from one another, and color filters disposed in the holes of the light-blocking layer and overlapping the openings. Sides of each of the openings have concave-convex patterns including convex portions that protrude outwardly and concave portions that are inwardly depressed. The color filters are disposed to partially overlap one another on the light-blocking layer.

Abstract: A display device includes a first and second pixel electrode. An inorganic insulating layer is partially disposed on the first and second pixel electrode. A bank structure is disposed on the inorganic insulating layer and includes a first opening overlapping the first pixel electrode and a second opening overlapping the second pixel electrode. First and second light emitting layers are disposed on the first and second pixel electrodes. First and second common electrodes are disposed on the first and second light emitting layers. A light blocking layer is disposed on the bank structure and includes a first opening hole overlapping the first opening and a second opening hole overlapping the second opening. First and second color filters are disposed in the first and second openings.

Abstract: A display panel, a manufacturing method thereof, and an electronic device are provided. The display panel includes a substrate, first electrodes, a pixel definition layer, light-emitting layers, and light-reflecting layers. In the present application, light-reflecting layers are provided in one of the pixel openings, the light-reflecting layer can reflect the light emitted by the light-emitting layers to the pixel definition layer so that the light emitted by the light-emitting layers is concentrated in the middle, which improves the light utilization rate of the light-emitting layers. Therefore, the technical problem of low luminous utilization efficiency of light-emitting pixels in the current OLED structure is alleviated.

Abstract: A semiconductor device structure includes a first dielectric layer disposed over a semiconductor substrate, and a second dielectric layer disposed over the first dielectric layer. The semiconductor device structure also includes a spacer structure disposed in the second dielectric layer, and a conductive structure penetrating through the second dielectric layer and extending into the first dielectric layer. The conductive structure is surrounded by the spacer structure. The semiconductor device structure further includes a liner layer separating the conductive structure from the first dielectric layer, the second dielectric layer and the spacer structure. The liner layer has a tapered sidewall in direct contact with the first dielectric layer.

Abstract: A display panel. The display panel includes an optical fingerprint region which is provided with a light-blocking layer and a protection layer, and the light-blocking layer is provided with a plurality of through holes; the protection layer includes a filling part; the filling part fills parts of regions in the through holes, the filling part is disposed surrounding and closely fitting side walls of the through holes, and the protection layer further includes a light-transmitting part, a height of the light-transmitting part is greater than or equal to depths of the through holes, and an included angle formed between a bottom wall of the filling part and a side wall of the light-transmitting part is an acute angle; or, the filling part fills a whole region in the through hole, and a material of the filling part is a light-transmitting material.

Abstract: An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk in a display, a cutting structure may disrupt continuity of the OLED layers. The cutting structure may have two undercuts to disrupt continuity of at least some of the OLED layers. The cutting structure may include a conductive portion that provides a cathode voltage to a cathode layer for the OLED pixels.

Abstract: A display panel is provided. The display panel includes an array substrate, an emissive layer, a color filter layer, and a functional material layer stacked together. A refractive index difference between the color filter layer and the functional material layer is greater than or equal to ?1 and less than or equal to 0.5. The color filter layer according to embodiments of the present invention not only has satisfactory optical parameters, can decrease reflectivity of the display, but can also be directly formed on the array substrate having the emissive layer, decreasing a thickness of the display panel and not damaging the emissive layer.

Abstract: An imaging device that generates, in a pixel, a potential higher than a potential to be supplied to the pixel is provided. The imaging device includes a pixel including a first circuit and a second circuit; the second circuit includes a photoelectric conversion device; the first circuit is electrically connected to the second circuit; the first circuit has a function of adding a first potential and a second potential to generate a third potential; and the second circuit has a function of generating data in the photoelectric conversion device to which the third potential is applied and has a function of outputting the data.

Abstract: A display panel, a formation method of the display panel, and a display apparatus are provided in the present disclosure. The display panel includes a base substrate, an array layer on a side of the base substrate, and a light-blocking part on a side of a semiconductor adjacent to the base substrate. The array layer includes a drive circuit, where the drive circuit includes a plurality of transistors, and the transistor includes the semiconductor; and further includes a power supply voltage signal line on a side of the semiconductor away from the base substrate. The light-blocking part includes a first light-blocking part and a second light-blocking part; the first light-blocking part is electrically connected to the power supply voltage signal line; and along a direction perpendicular to a plane of the base substrate, a semiconductor of each transistor is at least partially overlapped with the second light-blocking part.

Abstract: A quantum detector is provided with a vertically stacked structure. The detector comprises a conductive substrate, a plurality of quantum detectors configured on the conductive substrate, and a lower electrode. Each of the quantum detectors comprises an electron transport layer (GaAs), a three-dimensional topological insulator layer (Sb-doping Bi2Te3), a light-absorbing layer (e.g. having excellent graphene quantum dot (ZnO)), and an upper electrode. The lower electrode is disposed between first and second upper electrodes of the first and second quantum detectors that are adjacent to each other to provide a vertical series of electrical coupling. Thus, the present invention provides a novel photodetector with a vertical structure. With the preparation of a topological material through high-power impulsed magnetron sputtering (having a special surface state of an extremely-low energy gap), the mobility of electron-hole-pair carriers is effectively improved.

Abstract: A pixel structure and a display panel are provided. The pixel structure includes multiple pixel units arranged in an array. Each pixel unit includes a blocking layer, an anode layer, and a photosensor. The blocking layer is provided with a recognition hole penetrating through the blocking layer in a thickness direction of the pixel unit. Part of the anode layer and part of the blocking layer are disposed opposite to each other in the thickness direction. The anode layer includes an anode and a reflective layer. The anode includes a reflective region and a non-reflective region. The reflective region is disposed around the non-reflective region, and the reflective layer covers a surface of the reflective region of the anode. The photosensor is disposed at a side of the anode layer away from the blocking layer. The recognition hole is opposite to the photosensor in the thickness direction.

Abstract: A memory structure including a memory array is provided. The memory array is a block including six sub-blocks. The memory array includes string select line portions and ground select line portions. The string select line portions are arranged along a first direction. Each of the string select line portions is located in the corresponding sub-block. The ground select line portions are arranged along the first direction. Each of the ground select line portions is shared by only two corresponding sub-blocks. The memory structure may be a 3D NAND flash memory with high capacity and high performance.