Abstract: A trench gate type semiconductor device with a current sensing cell is composed so that the orientation of crystal face at side walls of trenches forming channels of trench gates in a main cell is equal or almost equal, or equivalent or almost equivalent to the orientation of crystal face at side walls of trenches forming channels of trench gates in a current sensing cell, which brings the same performance to the main and sense cells, whereby the high accuracy current sensing can be realized.

Abstract: A SOI device, comprising: a SOI wafer having a stack structure of a silicon substrate, a buried oxide layer having a first and a second contact holes and a silicon layer; an isolation layer formed in the silicon layer to define a device formation region; a transistor including a gate formed over the device formation region of the silicon layer defined by the isolation layer, source and drain regions formed at the both side of the gate in the device formation region, and a channel region which is a portion of the device formation region between the source and drain region; a conduction layer being contacted with the buried oxide layer; an impurity region for well pick-up formed in the silicon layer to be contacted with the buried oxide layer; a first contact layer formed within the first contact hole of the buried oxide layer to electrically connect the channel region of the transistor and the conduction layer; and a second contact layer formed with the second contact hole of the buried oxide layer to electri

Abstract: In order to easily and accurately manufacture a micromachine comprising a member which is made of a single-crystalline material and having a complicated structure, an uppermost layer (1104) of a single-crystalline Si substrate (1102) whose (100) plane is upwardly directed is irradiated with Ne atoms currents from a plurality of prescribed directions, so that the crystal orientation of the uppermost layer (1104) is converted to such orientation that the (111) plane is upwardly directed. A masking member (106) is employed as a shielding member to anistropically etch the substrate (1102) from its bottom surface, thereby forming a V-shaped groove (1112). At this time, the uppermost layer (1104) serves as an etching stopper. Thus, it is possible to easily manufacture a micromachine having a single-crystalline diaphragm having a uniform thickness. A micromachine having a complicated member such as a diagram which is made of a single-crystalline material can be easily manufactured through no junction.

Abstract: A wafer for testing a manufacturing process for vias has a large number of vias (millions) formed into strings that have an open circuit resistance if the string contains a defective via and have a resistance of a few thousand ohms if the string is good. A multiplexor circuit is formed on the test wafer and scans the via strings and produces a binary output denoting that the addressed string is good or defective. The addresses are generated off the wafer by a compute and a defective string is readily identified.

Abstract: A charged coupled device is disclosed including an asymmetrical split with independent control over the regions on opposite sides of the split. The charge coupled device is configurable for use in multiline or kinetic spectroscopy, and includes two separate horizontal registers with optional charge dump regions for improving efficiency.

Abstract: A variable resistor, a method of manufacturing the same and a voltage bias circuit that incorporates at least one variable resistor. In one embodiment, the variable resistor includes: (1) a substrate including a doped region having an inherent resistance, (2) a controllable switch formed in the substrate, electrically coupled to the doped region and having a control terminal and (3) a controller, coupled to the control terminal, that toggles the controllable switch to modify a current flow through the doped region and thereby vary a resistance of the variable resistor.

Abstract: A collective substrate of active-matrix substrates is divided into a first block and a second block. In cells of the first block and the second block, from a corresponding signal input pad group, an inspection scanning signal is inputted via a scanning-line short ring connecting line to scanning lines, an inspection display signal is inputted via a signal-line short ring connecting line to signal lines, and an auxiliary capacity wire signal is inputted via an auxiliary capacity wire main wire connecting line to auxiliary capacity wires. This arrangement makes it possible to perform an electrical inspection with high accuracy and efficiency on a large-format active-matrix substrate, and to manufacture an inspection probe frame in a simple manner at low cost.

Abstract: To make the thickness of an interlevel insulating film uniform and suppress variations in output signal, in a photoelectric conversion element including a plurality of photoelectric conversion portions, and light-shielding units having openings formed above the photoelectric conversion portions, the light-shielding units have first light-shielding layers, and second light-shielding layers formed on the first light-shielding layers via an interlevel insulating film. The first light-shielding layers have gaps (GP) for allowing two adjacent openings (OP) to communicate with each other. The second light-shielding layers have light-shielding portions (12a) above the gaps of the first light-shielding layers.

Abstract: A resin material having a small relative dielectric constant is used as a layer insulation film 114. The resin material has a flat surface. A black matrix or masking film for thin film transistors is formed thereon using a metal material. Such a configuration prevents the problem of a capacity generated between the masking film and a thin film transistor.