Abstract: Shared-readout pixels conventionally disposed in two or more physical columns of a pixel array are spatially interleaved (merged) within a single physical column to yield a pixel array in which each physical pixel column includes two or more logical columns of shared-readout pixels coupled to respective logical-column output lines.

Abstract: An image sensing device is provided to include a pixel array comprising a first pixel group and a second pixel group, each pixel configured to sense a distance to a target object in response to modulated light that is incident on the pixel array; a first modulation driver configured to supply, to the first pixel group, a first modulation control signal and a second modulation control signal; and a second modulation driver configured to supply, to the second pixel group, a third modulation control signal and a fourth modulation control signal, wherein the first and second modulation drivers are independently controlled from each other such that at least one of the first modulation control signal, the second modulation control signal, the third modulation control signal, or the fourth modulation control signal has a phase difference from the modulated light.

Abstract: An image capture device includes a first housing, a second housing, a first integrated sensor-lens assembly (ISLA), and a second ISLA. The second housing is coupled to the first housing to form an internal compartment. The first ISLA includes a first image sensor coupled to a first lens in fixed alignment. The second ISLA includes a second image sensor coupled to a second lens in fixed alignment. The first ISLA is positively statically connected to the first housing, and the second ISLA is coupled to the first housing indirectly via the first ISLA.

Abstract: A camera module includes a lens; an image sensor disposed on a substrate and converting an optical signal refracted by the lens into an electrical signal, an adhesive member disposed between the substrate and the image sensor to fix the image sensor to the substrate, and a support member disposed between the substrate and the image sensor configured to maintain a constant distance between the lens and the image sensor even at a time of shrinkage-deformation of the adhesive member.

Abstract: Provided are a camera capable of preventing an erroneous operation with a compact configuration and has high operability, a setting method of the camera, and a setting program of the camera. A change in a setting value by the operation dial is switched between valid and invalid, and an operation by the operation dial becomes possible only in a case where the change in the setting value is valid. A setting value of an item to be set by the operation dial is displayed on a dial display provided on the operation dial.

Abstract: Embodiments of the present disclosure include an event-based image sensor and an event filtering method for use with an event-based image sensor. The event-based image sensor comprises a plurality of pixel circuits forming a pixel array, each pixel circuit comprising a photoreceptor circuit configured to generate a photoreceptor signal derived from a photocurrent generated by a light impinging on a light-sensitive element of the photoreceptor circuit, and a detector configured to detect a change in the photoreceptor signal and to generate an event in response to the detected change in the photoreceptor signal. The event-based image sensor further includes a processing chain and an event filter that is configured to receive the generated event and to accept the received event based on a plurality of conditions.

Abstract: A solid-state imaging apparatus includes pixel cells arranged in a matrix. Each pixel cell includes: a first photodiode that accumulates a signal charge generated by photoelectric conversion; a second photodiode that functions as a first holder that holds a signal charge that overflows from the first photodiode; a second holder; and a first transfer transistor that transfers the signal charge held in the second photodiode to the second holder.

Abstract: A raw binary number (401) includes a first predefined number n1 of bits, wherein each bit represents either zero or 2(n?1) with n representing a position of the bit in the binary number and 1?n?n1. In the raw binary number a position of a highest-weighted bit unequal zero is identified. By using a first electronic circuit (491), binary position information is generated by encoding the identified position. An encoded binary number is compiled, wherein the encoded binary number is based on the binary position information and on a partial binary number. The partial binary number is a portion of the raw binary number directly following the highest-weighted bit unequal zero. The encoded binary number includes a second predefined number m1 of bits. The second predefined number m1 of bits is smaller than the first predefined number n1 of bits.

Abstract: An image sensor includes a pixel array, in which a plurality of pixels are arranged, and a row driver for controlling the plurality of pixels. Each of the plurality of pixels includes a first photodiode, a second photodiode having a larger light-receiving area than the first photodiode, a first floating diffusion node in which charges generated by the first photodiode are stored, a first capacitor connected to the first floating diffusion node, and a capacitor control transistor having one end connected in series to the first capacitor. For each of the plurality of pixels, the row driver adjusts capacitance of the first floating diffusion node by using the capacitor control transistor for each of a plurality of preset operation modes during a readout period of the first photodiode.

Abstract: An image sensor includes: a light detector including a plurality of photosensitive cells configured to sense light; a color separation lens array provided above the light detector and including a plurality of pattern structures, the color separation lens array being configured to collect light having different wavelength spectra respectively on at least two photosensitive cells of the plurality of photosensitive cells; and a variable interlayer element configured to adjust an optical distance between the light detector and the color separation lens array.

Abstract: An analog-to-digital conversion circuit includes a convertor configured to perform a first comparison operation for sensing a noise based on a reset signal and to perform a second comparison operation for sensing raw data to output data which is obtained by removing the noise from the raw data, and a ramp voltage generator configured to generate a ramp voltage used for the first comparison operation and the second comparison operation and to output the ramp voltage to the convertor. The ramp voltage generator includes a first current source for supplying a bias current for generating the ramp voltage in response to a first control signal, a second current source for supplying a boost current for generating the ramp voltage in response to a second control signal, and a generation circuit for generating the ramp voltage based on the bias current and the boost current.

Abstract: A solid-state imaging device includes a pixel that outputs a pixel signal of an analog signal, a readout unit that converts the pixel signal into a digital signal to generate a digital pixel signal, a memory unit that stores the digital pixel signal, and a first inspection signal output unit that outputs a first inspection signal to the memory unit such that the memory unit stores the first inspection signal. The first inspection signal stored in the memory unit is output from the memory unit in a period after output of the digital pixel signal of a frame ends and before output of the digital pixel signal of a next frame starts.

Abstract: Embodiments provide a lens moving apparatus including a housing supporting a magnet, a bobbin having an outer circumferential surface on which a first coil is disposed, the bobbin moving in the housing in a first direction, upper and lower elastic members each connected to both the housing and the bobbin, and a second coil disposed so as to be spaced apart from the first coil in the first direction, wherein the second coil generates induction voltage resulting from inductive interaction with the first coil when the bobbin moves in the first direction.

Abstract: A CMOS optical sensor comprises spare readout channels to replace readout channels found defective at the end of the manufacturing process. These spare readout channels are dispatched over the width of the optical sensor (corresponding to the row direction) in the form of spare groups Gm1, Gm2, Gm3 of m spare readout channels each, m integer at least equal to 1. Each spare group is inserted between two successive default groups Gn1 and Gn2 of n default readout channels each and coupling means SW1 are configured to replace a defective default readout channel in a default group as well as any default readout channels of the group between the defective one and the spare group next to the default group of concern.

Abstract: A solid-state imaging device includes: a pixel unit that outputs a pixel signal corresponding to an amount of incident light; an A/D converter that performs A/D conversion on the pixel signal; and a D/A conversion circuit that generates a reference signal to be used by the A/D converter. The D/A conversion circuit includes a first buffer circuit that outputs a base voltage VTOP for generating the reference signal, and the first buffer circuit includes a differential pair circuit including a first transistor and a second transistor, and a suppression circuit that suppresses a variation in the base voltage by canceling out a characteristic difference between the first transistor and the second transistor.

Abstract: The present invention belongs to the technical field of CMOS image sensors, and particularly relates to an on-chip multiplexing pixel control circuit for controlling a super-large area array splicing CMOS image sensor. The multiplexing type pixel control circuit includes at least one multiplexing unit, each multiplexing unit includes L levels of serial pixel control sub-circuits and a windowing address gating circuit. Through the different positions of the multiplexing units in the whole chip, the group address buffer circuits of the multiplexing units generate different group address reference signals, which are compared with a group decoding address generated in a group decoding address buffer circuit to realize group decoding and gate the multiplexing unit. Meanwhile, the serial pixel control sub-circuit in the multiplexing unit is compared with a row decoding address to realize exposure and readout control of a corresponding row of the multiplexing unit.

Abstract: An image capturing device includes an image capturing unit capturing an image at a timing based on a first frame rate and outputs data corresponding to the image after a first period, an image data generation unit generating image data based on the output data and outputting the image data after a second period, a display unit displaying a display image based on the image data after the second period and at a timing based on a second frame rate, and a mode selecting unit selecting a first or second mode. The first mode prioritizes reduction in a display delay time. The second mode prioritizes image quality of the display image over reduction in the display delay time. A total period of the first and second periods is less than or equal to a first vertical synchronization period based on the first frame rate when the first mode is selected.

Abstract: An image capturing apparatus comprises a plurality of light-receiving circuits, each outputting a pulse signal in response to a photon being incident; a plurality of counter circuits that count the respective pulse signals output by the plurality of light-receiving circuits; and a correction circuit that corrects counts from the plurality of counter circuits and outputs the corrected counts as image data. The correction circuit calculates a correction coefficient on the basis of counts obtained by the plurality of counter circuits in a state where pulse widths of the pulse signals differ or under conditions where generation frequencies of the pulse signals differ, and performs the correction using the correction coefficient.

Abstract: An image sensor includes a pixel array having a plurality of pixels; a row driver providing the pixel array with a boosting signal; and a read-out circuit configured to read out pixel signals output from pixels of a row line selected by the row driver. Each of the plurality of pixels includes: a first photodiode; a transmission transistor connected to the first photodiode; a first floating diffusion node, a second floating diffusion node, and a third floating diffusion node, which are connected to the transmission transistor to accumulate charges generated by the first photodiode; an LCG capacitor connected to the third floating diffusion node to accumulate the charges generated by the first photodiode; an MCG transistor connected between the first floating diffusion node and the second floating diffusion node; and an LCG transistor connected to the third floating diffusion node.

Abstract: It makes it easier to reduce the line capacitance of vertical signal lines in a solid-state image sensor in which signals are output via the vertical signal lines. The solid-state image sensor is provided with a logic circuit, a pixel circuit, and a negative capacitance circuit. In the solid-state image sensor, the logic circuit processes an analog signal. Also, in the solid-state image sensor, the pixel circuit generates an analog signal by photoelectric conversion, and outputs the analog signal to the logic circuit via a predetermined signal line. In the solid-state image sensor, the negative capacitance circuit is connected to the predetermined signal line.