Abstract: According to the present disclosure, an imaging element may include: a substrate or a well; a pinned photodiode disposed on the substrate; a floating diffusion region disposed on the substrate or the well; a first transfer gate transistor disposed between the pinned photodiode and the floating diffusion region a photodiode signal charge generated by the pinned photodiode to the floating diffusion region; one or more gate-controlled storages disposed on the substrate and storing a signal charge generated by the pinned photodiode as a storage signal charge; a storage-controlling gate electrode disposed adjacent to the gate-controlled storage; an overflow path disposed between the pinned photodiode and the gate-controlled storage and transferring the storage signal charge from the pinned photodiode to the gate-controlled storage; and a detecting node connected to the floating diffusion region, wherein the photodiode signal charge and the storage signal charge can be read at the detecting node.

Abstract: An image conversion device includes: a lens module configured to allow passing of image light beams of an object, an optical waveguide element configured to transmit the image light beams to a light processing component, and an image sensor configured to convert the image light beams into digital image signals. By changing image capturing and image forming methods, higher image quality may be achieved and expanding flexibility may be maintained.

Abstract: Disclosed is an electronic device including a camera module enabling a movable member (e.g., a circuit board) having an image sensor disposed thereon to move for an image stabilization function and including a connecting member that provides electrical connection of the image sensor, and an electronic device including the camera module.

Abstract: An image capturing unit captures an image including an embedded image that is printed on the basis of image data in which at least a color component has been modulated according to additional information. An adjustment unit adjusts a white balance of the image captured by the image capturing unit on the basis of an adjustment value associated with the embedded image. A processing unit processes image data of the image captured by the image capturing unit whose white balance has been adjusted by the adjustment unit to read the additional information in the image captured by the image capturing unit.

Abstract: A pixelated image sensor capable of simultaneously supporting an EVS mode and an image-frame capture mode of operation. An individual pixel of the sensor comprises two distinct sets of subpixels involved in the two modes, respectively, and at least two corresponding, functionally different and independent electrical circuits. The metal interconnect structure of the image-sensor IC is implemented using a wiring topology in which spatial overlap between the wirings of the two electrical circuits is optimized (e.g., minimized) to reduce inter-circuit crosstalk when the two circuits are active at the same time. Such wiring topology may be beneficial, e.g., due to the resulting improvements in the image quality for both operating modes.

Abstract: The present disclosure provides an image sensor, which includes: a pixel collection circuit array including a plurality of pixel collection circuits, each pixel collection circuit being configured to monitor a change in a light intensity in a field of view and enter a triggered state when the change in the light intensity meets a predetermined condition; a global control unit configured to reset the pixel collection circuit array when the image sensor is powered on, and control the pixel collection circuit array in a stable initial state to operate; a photo current detection unit configured to determine whether there is the change in the light intensity, and control an operating state of at least one pixel collection circuit in accordance with the detected change in the light intensity; and a reading unit configured to respond to the pixel collection circuit in the triggered state and output corresponding address information.

Abstract: An image sensor includes a pixel array, a row driver, a detector, an analog-to-digital converter and a controller. The pixel array includes a pixel area including a pixel and a dummy area including a monitoring circuit. The dummy area is disposed on a same substrate as the pixel area. The dummy area is disposed adjacent to the pixel area. The row driver is configured to output a driving signal to the pixel and the monitoring circuit. The detector is configured to receive a monitoring signal from the monitoring circuit. The analog-to-digital converter is configured to receive an analog signal corresponding to an incident light from the pixel and to convert the analog signal to a digital signal. The controller is configured to control the row driver and the analog-to-digital converter.

Abstract: A high-quality image is taken by a solid-state imaging element that detects an address event. The solid-state imaging element is provided with a pixel array unit and an analog-to-digital conversion unit. In the pixel array unit in the solid-state imaging element, a normal pixel that generates an analog signal by photoelectric conversion of incident light and outputs the analog signal and a detection pixel that detects that an amount of change in incident light becomes larger than a predetermined threshold and outputs a detection result are arranged. Furthermore, the analog-to-digital conversion unit converts the analog signal into a digital signal.

Abstract: In one implementation, an event sensor includes a plurality of pixels, an external readout line shared among the plurality of pixels, and an external processing circuit. Each pixel is configured to output pixel data indicative of an intensity of incident illumination. The external processing circuit is configured to output a stream of pixel events. Each respective pixel event is generated when a comparator of the external processing circuit obtains a sample of pixel data from a particular pixel via the external readout line that breaches a threshold value.

Abstract: An image sensing device includes: a control circuit coupled between an output terminal of a pixel signal and a high voltage terminal, and configured to generate a control voltage corresponding to a voltage level of the pixel signal; and a current supplying circuit coupled between the output terminal and the high voltage terminal, and configured to supply a pre-charge current, which is configured to be adaptively adjusted according to the voltage level of the pixel signal, to the output terminal based on the control voltage.

Abstract: An imaging device with a plurality of image sensing pixels and a plurality of event detection pixels is provided. The image sensing and event detection pixels can be provided as part of different arrays of pixels, or can be included within a common array of pixels. The event detection pixels are operated continuously to provide signals indicating the occurrence of events. In response to detecting an event, image sensing pixels are selectively operated. The selective operation of the image sensing pixels can include activation of image sensing pixels within one or more regions of interest, while image sensing pixels not included in any region of interest remain off. The selective operation of the image sensing pixels can include the selection of a frame rate applied across an array of mage sensing pixels, or within determined regions of interest.

Abstract: The present disclosure relates to a solid-state imaging device, a method for driving the solid-state imaging device, and an electronic device capable of improving auto-focusing accuracy by using a phase difference signal obtained by using a photoelectric conversion film. The solid-state imaging device includes a pixel including a photoelectric conversion portion having a structure where a photoelectric conversion film is interposed by an upper electrode on the photoelectric conversion film and a lower electrode under the photoelectric conversion film. The upper electrode is divided into a first upper electrode and a second upper electrode. The present disclosure can be applied to, for example, a solid-state imaging device or the like.

Abstract: The present invention discloses an image sensor, an image readout method, and an electronic device. The image sensor comprises: a pixel array and a plurality of readout conversion circuits, the readout conversion circuit comprises: a comparison circuit for comparing an output signal of the column pixel with a ramp signal to obtain a first output signal and a second output signal; a selection module for selecting the first output signal during a first sampling count, and selecting the second output signal during a second sampling count; a counter for counting according to the first output signal and the second output signal to obtain total quantization value of the first sampling count and the second sampling count, so as to obtain actual signal quantization result according to the total quantization value. The image readout speed of the image sensor is improved.

Abstract: An image stabilization apparatus comprises a motion vector detector that detects a motion vector from images repeatedly output from an image sensor; a first calculator that calculates a first image stabilization coefficient based on the motion vector; a second calculator that calculates a second image stabilization coefficient based on acceleration of shake of an image capturing apparatus; a determination unit that selects either of the first or the second image stabilization coefficient based on information about accuracy of detection of the motion vector; and a translational shake calculator that calculates an amount of translational shake using the first or the second image stabilization coefficient selected by the determination unit. In a case where the information indicates that the accuracy is low, the determination unit selects the second image stabilization coefficient, and select the first image stabilization coefficient otherwise.

Abstract: An imaging device 100 includes a pixel array PA. A first period, a third period, and a second period appear in this order in a first frame. During the first period, pixel signal readout is performed on a first row in the pixel array PA. During the second period, pixel signal readout is performed on a second row in the pixel array PA. Each of the first period and the second period is a high-sensitivity exposure period. The third period is a low-sensitivity exposure period.

Abstract: An object of the present technology is to provide an image sensor and a photodetector that are capable of reducing power consumption of an AD conversion unit. The image sensor includes a comparator, in which the comparator includes a differential input unit that includes a first input unit connected to a first capacitance unit and a second input unit connected to a second capacitance unit, a current mirror unit that includes a first resistance element connected to the differential input unit and an NMOS transistor diode-connected via the first resistance element, a second resistance element connected to the differential input unit, and a switch unit provided between the first input unit and a junction between the first resistance element and the NMOS transistor, and between the second input unit and a junction between the second resistance element and the current mirror unit.

Abstract: An image sensor including a pixel that includes: a first photoelectric conversion unit and a second photoelectric conversion unit, each of which generates an electric charge through photoelectric conversion of light; an output unit that outputs a first signal generated based upon the electric charge generated in the first photoelectric conversion unit and a second signal generated based upon an electric charge generated in the second photoelectric conversion unit; and an adjustment unit that adjusts a capacitance at the output unit upon outputting of the first signal and the second signal from the output unit.

Abstract: An imaging unit having a superior phase-difference detection characteristic is provided. The imaging unit includes two or more image-plane phase-difference detection pixels each including a semiconductor layer, a photoelectric converter, a charge holding section, a first light-blocking film, and a second light-blocking film. The semiconductor layer includes a front surface and a back surface on an opposite side to the front surface. The photoelectric converter is provided in the semiconductor layer, and is configured to generate electric charge corresponding to a light reception amount by photoelectric conversion. The charge holding section is provided between the front surface and the photoelectric converter in the semiconductor layer, and is configured to hold the electric charge. The first light-blocking film is positioned between the photoelectric converter and the charge holding section, and has an opening through which the electric charge is allowed to pass.

Abstract: An event based pixel sensor system employing delay equalization between differently illuminated pixels.

Abstract: An image sensor may include an image sensor pixel array, row control circuitry, and column readout circuitry. The column readout circuitry may include analog-to-digital converter (ADC) circuitry. The ADC circuitry may have a first portion that selectively converts pixel signals associated with a low light or high conversion gain operating environment and a second portion that converts any pixel signals. As an example, the first portion may be a ramp ADC and the second portion may be a successive approximation register (SAR) ADC.