Abstract: Systems and methods for a semiconductor device having a front-end-of-line structure are provided. The semiconductor device may include a dielectric material having a backside formed on a front side of a semiconductor substrate material and a front side, and an interconnect structure extending through the dielectric material. The interconnect structure may be electrically connected to a semiconductor memory array proximate the front side of the dielectric material. The semiconductor device may further have an insulating material encasing at least a portion of the semiconductor memory array and an opening created during back-end-of-line processing through which the active contact surface at the backside of the interconnect structure is exposed for electrical connection.

Abstract: A method includes putting a first package component into contact with a second package component. The first package component comprises a first dielectric layer including a first dielectric material, and the first dielectric material is a silicon-oxide-based dielectric material. The second package component includes a second dielectric layer including a second dielectric material different from the first dielectric material. The second dielectric material comprises silicon and an element selected from the group consisting of carbon, nitrogen, and combinations thereof. An annealing process is performed to bond the first dielectric layer to the second dielectric layer.

Abstract: A semiconductor structure including a first substrate, a first conductive layer, and first bonding pads is provided. The first conductive layer is located on the first substrate. The first conductive layer includes a main body portion and an extension portion. The extension portion is connected to the main body portion and includes a terminal portion away from the main body portion. The first bonding pads are connected to the main body portion and the extension portion. The number of the first bonding pads connected to the terminal portion of the extension portion is plural.

Abstract: A semiconductor device includes a first semiconductor substrate, a second semiconductor substrate, and at least one guard structure including a first guard element, a second guard element, and a third guard element. The first semiconductor substrate and the second semiconductor substrate are bonded to one another at a bonding interface between a surface of the first semiconductor substrate and a surface of the second semiconductor substrate. The first guard element is in the first semiconductor substrate and spaced apart from the third guard element by a portion of the first semiconductor substrate. The second guard element is in the second semiconductor substrate and spaced apart from the third guard element by a portion of the second semiconductor substrate, and the third guard element includes portions in the first surface and the second surface to bond the first semiconductor substrate to the second semiconductor substrate.

Abstract: A package structure including a semiconductor die, an encapsulant, a redistribution structure, and a through insulating via is provided. The first redistribution structure includes an insulating layer and a circuit layer. The semiconductor die is disposed on the first redistribution structure. The semiconductor die includes a semiconductor base, through semiconductor vias, a dielectric layer, and bonding connectors. Through semiconductor vias penetrate through the semiconductor base. The dielectric layer is disposed on a backside of the semiconductor base. The dielectric layer of the semiconductor die is bonded with the insulating layer of the first redistribution structure. The bonding connectors are embedded in the dielectric layer and connected to the through semiconductor vias. The bonding connectors of the semiconductor die are bonded with bonding pads of the circuit layer. The encapsulant is disposed on the first redistribution structure and encapsulates the semiconductor die.

Abstract: Embodiments relate to the field of semiconductors, and provide a semiconductor structure and a method for fabricating the same. The semiconductor structure includes a first wafer and a second wafer. A surface of the first wafer has a first electrode plate, a first dielectric layer and a first dummy pad stacked in sequence to constitute a capacitor; and the surface of the first wafer further has a first functional pad, and the first functional pad and the first dummy pad are arranged on a same layer. The second wafer is bonded to the first wafer, and a surface of the second wafer has a second dummy pad and a second functional pad arranged on a same layer. The first dummy pad is bonded to the second dummy pad, and the first functional pad is bonded to the second functional pad.

Abstract: A semiconductor structure includes a metal gate structure having a gate dielectric layer and a gate electrode. A topmost surface of the gate dielectric layer is above a topmost surface of the gate electrode. The semiconductor structure further includes a conductive layer disposed on the gate electrode of the metal gate structure, the conductive layer having a bottom portion disposed laterally between sidewalls of the gate dielectric layer and a top portion disposed above the topmost surface of the gate dielectric layer. The semiconductor structure further includes a contact feature in direct contact with the top portion of the conductive layer.

Abstract: Disclosed are a display panel and a displaying device. The display panel includes a plurality of first-color subpixels, and each first-color subpixel includes a base, the base including a first driving electrode and a second driving electrode; at least one first electrode, disposed at a side of the base and is connected to the first driving electrode; at least one second electrode, disposed at a same side of the base with the first electrode and is connected to the second driving electrode; an intermediate layer, disposed between the first electrode and the second electrode; wherein the first electrode and the second electrode divide the first-color subpixel into a plurality of secondary pixels, the first electrode and the second electrode are insulated with each other via the intermediate layer, and are respectively connected to the first driving electrode and the second driving electrode, and control the secondary pixels independently.

Abstract: Microelectronic stacked die package structures formed according to some embodiments may include a first die comprising a first conductive layer over a substrate layer. A second die may be on the first conductive layer. A third die is on the second die. An edge region of the stacked die package structure comprises a first portion over a second portion, the first portion comprising edges of the third die, the second die, and the first conductive layer, and the second portion comprising the substrate layer of the first die, wherein the first portion comprises a curved profile, and the second portion comprises a substantially vertical profile.

Abstract: A display panel includes a flexible substrate. The flexible substrate includes a display region and a peripheral region. A plurality of self-luminescent elements is on a first main face of the display region of the flexible substrate. A plurality of thin film transistor (TFT) circuits is between the first main face and the self-luminescent elements. The TFT circuits drive the self-luminescent elements. A first inorganic film is between the TFT circuits and the self-luminescent elements, and includes a step portion which is a thinned portion of the first inorganic film disposed in the peripheral region of the flexible substrate. A second inorganic film covers the self-luminescent elements. A resin layer overlaps the second inorganic film and overlaps at least a portion of the first inorganic film in contact with an end portion of the second inorganic film.

Abstract: A bonding structure for a semiconductor substrate and related method are provided. The bonding structure includes a first oxide layer on the semiconductor substrate, and a second oxide layer on the first oxide layer, the second oxide layer for bonding to another structure. The second oxide layer has a higher stress level than the first oxide layer, and the second oxide layer is thinner than the first oxide layer. The second oxide layer may also have a higher density than the first oxide layer. The bonding structure can be used to bond chips to wafer or wafer to wafer and provides a greater bond strength than just a thick oxide layer.

Abstract: A semiconductor die is provided, comprising a semiconductor substrate; a dielectric layer over the semiconductor substrate; a bond pad in the dielectric layer, the bond pad including an exposed top surface that is recessed with respect to a surface of the dielectric layer opposite to the semiconductor substrate; and a region of piezoelectric material in the dielectric layer, wherein the region is located proximate to the bond pad to supply thermal energy to the bond pad in response to exposing the piezoelectric material to an externally-applied field.

Abstract: An integrated circuit includes a conductive pad. In some embodiments, the conductive pad includes at least one dielectric pattern therein, wherein the at least one dielectric pattern penetrates a surface of the conductive pad. In some embodiments, the conductive pad includes a conductive main body and at least one hole in the conductive main body, wherein the at least one hole penetrates a surface of the conductive main body.

Abstract: A temperature-controlled substrate support for a substrate processing system includes a substrate support and a controller. The substrate support includes N zones and N resistive heaters, respectively, where N is an integer greater than one, and a temperature sensor located in one of the N zones. The controller is configured to calculate N resistances of the N resistive heaters during operation and adjust power to N?1 of the N resistive heaters during operation of the substrate processing system in response to a temperature measured by the temperature sensor located in the one of the N zones and the N resistances of the N resistive heaters.

Abstract: A method for forming the semiconductor structure includes: a wafer in which a semiconductor device is formed is provided; a blind hole is formed in the wafer; a first metal material is deposited in the blind hole to form a through silicon via; and a first metal material deposited on a surface of the wafer is removed, and the surface of the wafer is planarized.

Abstract: A bonded structure is disclosed. The bonded structure can include an interconnect structure. The bonded structure can also include a first die directly bonded to the interconnect structure. The bonded structure can also include a second die mounted to the interconnect structure. The second die is spaced apart from the first die laterally along an upper surface of the interconnect structure. The second die is electrically connected with the first die at least partially through the interconnect structure. The bonded structure can further include a dielectric layer that is disposed over the upper surface of the interconnect structure between the first die and the second die.

Abstract: Semiconductor devices and corresponding methods of manufacturing the same are disclosed. For example, a semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. A first portion of a test structure is disposed over the first substrate and a second portion of the test structure is disposed over the second substrate. The test structure includes intentionally offset portions. The performance characteristics of the intestinally offset portions are measured to detect an alignment of the first portion of the test structure and a second portion of the test structure.

Abstract: A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory opening fill structures including a respective vertical semiconductor channel and a respective memory film, and support pillar structures including a respective dummy vertical semiconductor channel, a respective dummy memory film, and a vertical stack of dielectric spacer fins located at levels of the electrically conductive layers and interposed between the electrically conductive layers and the respective dummy memory film.

Abstract: A CMOS device including a substrate comprising a shallow trench isolation region, an nFET on the substrate above the shallow trench isolation region, and a pFET. The nFET includes a source region, a drain region, a channel region including a series of nanowires extending from the source region to the drain region, and a gate region around the series of nanowires of the channel region. The nanowires include a first series of nanowires in a first column and a second series of nanowires in a second column adjacent to the first column. The pFET includes a source region, a drain region, a channel region extending from the source region to the drain region, and a gate region on the channel region.

Abstract: A method for bonding two superconducting integrated circuits (“chips”), such that the bonds electrically interconnect the chips. A plurality of indium-coated metallic posts may be deposited on each chip. The indium bumps are aligned and compressed with moderate pressure at a temperature at which the indium is deformable but not molten, forming fully superconducting connections between the two chips when the indium is cooled down to the superconducting state. An anti-diffusion layer may be applied below the indium bumps to block reaction with underlying layers. The method is scalable to a large number of small contacts on the wafer scale, and may be used to manufacture a multi-chip module comprising a plurality of chips on a common carrier. Superconducting classical and quantum computers and superconducting sensor arrays may be packaged.