Abstract: A semiconductor device and method of manufacturing the same are provided. The semiconductor device includes a first active region extending along a first direction. The semiconductor device also includes a second active region extending along the first direction. The semiconductor device further includes a first gate extending along a second direction perpendicular to the first direction. The first gate has a first segment disposed between the first active region and the second active region. In addition, the semiconductor device includes a first electrical conductor extending along the second direction and across the first active region and the second active region, wherein the first segment of the first gate and the first electrical conductor are partially overlapped to form a first capacitor.

Abstract: A semiconductor memory device according to an embodiment includes a substrate, conductive layers, pillars, and contacts. The substrate includes first and second areas, and block areas. The conductive layers are divided for each of the block areas. The conductive layers includes terraced portions. The contacts are respectively provided on the terraced portions for each of the block areas. The second area includes a first sub area and a second sub area. The first sub area includes a first stepped structure. The second sub area includes a second stepped structure and a first pattern. The first pattern is continuous with any one of the conductive layers. The first pattern is arranged between the first stepped structure and the second stepped structure.

Abstract: A micro multi-color LED device includes two or more LED structures for emitting a range of colors. The two or more LED structures are vertically stacked to combine light from the two more LED structures. Light from the micro multi-color LED device is emitted horizontally from each of the LED structures and reflected upward via some reflective structures. In some embodiments, each LED structure is connected to a pixel driver and/or a common electrode. The LED structures are bonded together through bonding layers. In some embodiments, planarization layers enclose each of the LED structures or the micro multi-color LED device. In some embodiments, one or more of reflective layers, refractive layers, micro-lenses, spacers, and reflective cup structures are implemented in the device to improve the LED emission efficiency. A display panel comprising an array of the micro tri-color LED devices has a high resolution and a high illumination brightness.

Abstract: A semiconductor memory device includes a first stacked structure, a first supporter layer, a second stacked structure, a block cut structure, and a second supporter layer on the second stacked structure and separated by a second cut pattern. The first stacked structure includes a first and second stack, the second stacked structure includes a third stack separated by the block cut structure and a fourth stack, the first supporter layer is on the first stack and the second stack, the second supporter layer is on the third stack and the fourth stack, the first cut pattern includes a first connection on the block cut structure and connecting the first supporter layer and the second stack, and the second cut pattern of the second supporter layer includes a second connection on the block cut structure and connecting the second supporter layer placed on the third stack and the fourth stack.

Abstract: An OLED panel includes a display area and a non-display area around the display area; a substrate, a driving device layer and a light emitting device layer arranged in the display area, an encapsulation layer covering the light emitting device layer; and a touch layer located on a side of the encapsulation layer facing away from the substrate, the touch layer comprising a touch electrode and a touch wire. The non-display area includes an electrostatic discharge portion, the electrostatic discharge portion is made of a conductive material and is located on a side of the encapsulation layer facing away from the substrate. The non-display area includes a blocking portion, the blocking portion is arranged around the display area, and is located between the substrate and the encapsulation layer. The electrostatic discharge portion is located on a side of the touch wire facing away from the display area.