Patents Examined by Ourmard S. Ojan
  • Trenching techniques for forming channels, vias and components in substrates
    Patent number: 5219787
    Abstract: Trenching techniques for forming a channel partially through and a via completely through the insulating layer of a substrate are disclosed. With additional steps the channel can form an electrically conductive line, an electrode of an integrated capacitor, or an optical waveguide.
    Type: Grant
    Filed: February 24, 1992
    Date of Patent: June 15, 1993
    Assignee: Microelectronics and Computer Technology Corporation
    Inventors: David H. Carey, Douglass A. Pietila, David M. Sigmond
  • Method for forming programmable resistive element
    Patent number: 5147817
    Abstract: A programmable resistive element is provided which includes a channel 16 comprising a layer of gallium arsenide. A programming barrier 18 is disposed outwardly from channel 16. A storage gate 20 comprising a layer of intrinsic gallium arsenide is disposed outwardly from programming barrier 18. An insulator 22, comprising a layer of aluminum-gallium-arsenide, is disposed outwardly from storage gate 20. A control gate 24 is disposed outwardly from insulator 22. First and second spaced apart contacts 26 and 28 contact channel 16.
    Type: Grant
    Filed: November 16, 1990
    Date of Patent: September 15, 1992
    Assignee: Texas Instruments Incorporated
    Inventors: Gary A. Frazier, Robert T. Bate