Patents Examined by Owmazd Ojan
  • C-MOS device and a process for manufacturing the same
    Patent number: 5079183
    Abstract: Element separate regions consisting of insulation material are provided on a semiconductor substrate of a first conductivity type. Element regions which respectively consist of monocrystalline semiconductor layers of the first and second conductivity types are provided in at least two adjacent regions among a plurality of island substrate regions separated by the element separate regions. An impurity layer is provided in that portion between the substrate and at least one of the element regions.
    Type: Grant
    Filed: January 6, 1989
    Date of Patent: January 7, 1992
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Satoshi Maeda, Hiroshi Iwai