Abstract: A resonator for testing, a method for manufacturing a resonator for testing, and a method for testing a resonator are provided. The resonator for testing includes: a testing substrate, a testing bottom electrode, a testing piezoelectric layer, a testing top electrode, at least one first testing electrode, and at least one second testing electrode. The first testing electrode is connected to the testing bottom electrode, the second testing electrode is connected to the testing top electrode, a spacing region is arranged between the first testing electrode and the second testing electrode, and a thickness between the testing piezoelectric layer and at least one of the first testing electrode and the second testing electrode is greater than a predetermined thickness to insulate the first testing electrode and the second testing electrode.

Abstract: An acoustic resonator with a reinforcing structure is provided according to the present disclosure. The acoustic resonator includes a substrate and a cavity formed on the substrate, a piezoelectric layer is arranged above the substrate and an opening passing through the piezoelectric layer is formed in a peripheral region of the piezoelectric layer. The reinforcing structure includes a reinforcing layer, part of the reinforcing layer is formed at the edge of the opening with being fitted to the edge, to reinforce a resonant functional layer near the edge of the opening, which can reduce a change in stress of the piezoelectric layer and the lower electrode near the edge of the opening after the cavity is released, so that the piezoelectric layer and the lower electrode do not easily collapse due to stress, thereby ensuring the performance of a device. A method for manufacturing the same is further provided.

Abstract: Provided is a micromechanical resonator including a support beam including a first portion supported on a support member and a second portion spaced apart from the first portion in a length direction of the support beam, and a piezoelectric sensing portion provided between the first portion and the second portion and connecting the first portion to the second portion.

Abstract: Techniques for improving Bulk Acoustic Wave (BAW) resonator structures are disclosed, including filters, oscillators and systems that may include such devices. A first layer of piezoelectric material having a piezoelectrically excitable resonance mode may be provided. The first layer of piezoelectric material may have a thickness so that the bulk acoustic wave resonator has a resonant frequency. The first layer of piezoelectric material may include a first pair of sublayers of piezoelectric material, and a first layer of temperature compensating material. A substrate may be provided.

Abstract: An ultrasonic transducer for wind turbine applications. The transducer includes a housing with a central diaphragm portion, a peripheral wall thereabout, and a flexure portion supporting the diaphragm portion relative to the peripheral wall. The apex of a cone is secured to the housing central diaphragm portion and the cone has a peripheral rim secured to the metal housing peripheral wall. A driver such as a piezoelectric element is secured to the housing central diaphragm portion opposite the cone apex.

Abstract: The invention discloses a bulk acoustic wave resonator and a manufacturing method thereof, the bulk acoustic wave resonator comprising: an air gap arranged at the external of the effective piezoelectric region, the air gap being formed between the upper electrode and the piezoelectric layer and/or between the piezoelectric layer and the substrate, and covering the end part, proximal to the air gap, of the lower electrode or connecting to the end part of the lower electrode, wherein the air gap is provided with a first end proximal to the effective piezoelectric region, and at least a portion of the upper surface, starting from the first end, of the air gap is an arch-shaped upper surface. The bulk acoustic wave resonator of the present invention capable of increasing a quality factor (Q) and an effective electromechanical coupling coefficient (K2t,eff) and improving the electrostatic discharge (ESD) immunity.

Abstract: A method for manufacturing a film bulk acoustic resonator (FBAR) package with a thin film sealing structure includes: forming an FBAR having a bottom electrode, a piezoelectric layer, and a top electrode on a substrate; forming a plurality of inner pad electrodes electrically connected to the top electrode and the bottom electrode of the FBAR; attaching a PR (photo-resist) film to tops of the inner pad electrodes; etching the PR film to expose the inner pad electrodes to the outside; and forming a sealing layer on top of the PR film and tops of the exposed inner pad electrodes.

Abstract: A device for emitting an ultrasound acoustic wave in a propagation medium, comprising: a package including a base substrate and a cap coupled to the base substrate and defining therewith a chamber in the package; a semiconductor die, coupled to the base substrate in the chamber, comprising a semiconductor body; a micromachined ultrasonic transducer (MUT) integrated at least in part in the semiconductor body and including a cavity in the semiconductor body and a membrane suspended over the cavity; and an actuator, operatively coupled to the membrane, which can be operated for generating a deflection of the membrane. The membrane is designed in such a way that a resonance frequency thereof matches an acoustic resonance frequency that, during operation of the MUT, develops in said chamber of the package.

Abstract: A vibration device includes a bimorph type piezoelectric element having a first main surface and a second main surface facing each other and a vibration member bonded to the second main surface of the piezoelectric element. The piezoelectric element has a first active region disposed closer to the first main surface between the first and second main surfaces and a second active region disposed closer to the second main surface than the first active region between the first and second main surfaces. When a force generated in the first active region is F1, a force generated in the second active region is F2, and a force by which the vibration member restrains the second active region is Fr, F2?F1?Fr is satisfied.

Abstract: A strain compensated heterostructure comprising a substrate comprising silicon carbide material; a first epitaxial layer comprising single-crystal aluminum nitride material formed on a top surface of the substrate; a second epitaxial layer formed on the first epitaxial layer opposite the top surface of the substrate, the second epitaxial layer comprising single-crystal scandium aluminum nitride material; and a third epitaxial layer formed on the second epitaxial layer opposite the first epitaxial layer, the third layer comprising single-crystal aluminum nitride material.

Abstract: The present disclosure provides a film bulk acoustic resonator and its fabrication method. The fabrication method includes providing a first substrate, and sequentially forming a first electrode layer, a piezoelectric material layer, and a second electrode layer, on the first substrate; forming a support layer on the second electrode layer and forming a cavity with a top opening in the support layer, where the cavity passes through the support layer; providing a second substrate and bonding the second substrate with the support layer; removing the first substrate; and patterning the first electrode layer, the piezoelectric material layer, and the second electrode layer to form a first electrode, a piezoelectric layer, and a second electrode.

Abstract: A bulk acoustic wave resonator device comprises bottom and top electrodes (120, 360). A piezoelectric layer (355) sandwiched therebetween has a thickness in the active resonator area different from the thickness in the surrounding area. A method of manufacturing the device comprises a bonding of a piezoelectric wafer to a carrier wafer and splitting a portion of the piezoelectric wafer by an ion-cut technique. Different thicknesses of the piezoelectric layer in the active area and the surrounding area are achieved by implanting ions at different depths.

Abstract: Provided are an actuator, method for manufacturing the actuator, and acoustic transmitter having the actuator. The actuator includes: an elastic metal member having a plurality of curved segments and a plurality of connection segments which constitute a ring structure with a long-axis direction and a short-axis direction; a multilayer piezoelectric member disposed within the ring structure and having a plurality of stacked piezoelectric units along the long-axis direction; and a plurality of coupling members disposed within the ring structure, wherein the multilayer piezoelectric member has two ends in the long-axis direction that are coupled to the connection segments of the elastic metal member in the long-axis direction. A preload stress is imparted to the elastic metal member. A plurality of coupling members having a size corresponding to the preload stress are disposed between the elastic metal member and the multilayer piezoelectric member.

Abstract: Techniques for improving Bulk Acoustic Wave (BAW) mass loading of resonator structures are disclosed, including filters, oscillators and systems that may include such devices. First and second layers of piezoelectric material may be acoustically coupled with one another to have a piezoelectrically excitable resonance mode. The first layer of piezoelectric material may have a first piezoelectric axis orientation, and the second layer of piezoelectric material may have a second piezoelectric axis orientation that substantially opposes the first piezoelectric axis orientation of the first layer of piezoelectric material. An acoustic reflector electrode may include a first pair of top metal electrode layers electrically and acoustically coupled with the first and second layer of piezoelectric material to excite the piezoelectrically excitable resonance mode at a resonant frequency of the BAW resonator.

Abstract: An acoustic wave element includes: a substrate; a bonding structure on the substrate; a support layer on the bonding structure; a first electrode including a lower surface on the support layer; a cavity positioned between the support layer and the first electrode and exposing a lower surface of the first electrode; a piezoelectric layer on the first electrode; and a second electrode on the piezoelectric layer, wherein at least one of the first electrode and the second electrode includes a first layer and a second layer that the first layer has a first acoustic impedance and a first electrical impedance, the second layer has a second acoustic impedance and a second electrical impedance, wherein the first acoustic impedance is higher than the second acoustic impedance, and the second electrical impedance is lower than the first electrical impedance.

Abstract: A wafer level package comprises a functional wafer with a first surface, device structures connected to device pads arranged on the first surface. A cap wafer, having an inner and an outer surface, is bonded with the inner surface to the first surface of the functional wafer. A frame structure surrounding the device structures is arranged between functional wafer and cap wafer. Connection posts are connecting the device pads on the first surface to inner cap pads on the inner surface. Electrically conducting vias are guided through the cap wafer connecting inner cap pads on the inner surface and package pads on the outer surface of the cap wafer.

Abstract: A low frequency underwater sound electro-mechanical transduction bender apparatus for radiating sound at deep submergence depths and including at least one piezoelectric bilaminar or trilaminar beam or disc having opposed support ends; a pair of piezoelectric structures that each have sides that are respectively connected at the opposed support ends of the beam or disc. The piezoelectric bilaminar or trilaminar beam or disc is driven by the pair of piezoelectric structures. The apparatus further includes a housing that contains the piezoelectric bilaminar or trilaminar beam or disc and the pair of piezoelectric structures, as well as an internal fill of a fluid substance.

Abstract: A transducer for an ultrasonic scalpel, which comprises, from distal end to proximal end of a connecting feature, a fixing feature, a horn, a piezoelectric converting body, a rear-end ring, and a connecting member. By following a design principle of constraints in the parameter relationships between the piezoelectric converting body and the horn in the transducer, a transducer having both appropriate gain and stable performance can be achieved.

Abstract: A thin film bulk acoustic resonator and a method for manufacturing the same. The thin film bulk acoustic resonator comprises a bottom electrode layer, a piezoelectric layer, and a top electrode layer, which are disposed on a substrate in which an acoustic reflection structure is located, where a portion which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure is depolarized to form a depolarized portion. The method comprises providing a bottom electrode layer on a substrate to cover an acoustic reflection structure which is formed or to be formed on the substrate; providing a piezoelectric layer on the bottom electrode layer; depolarizing a portion, which is of the piezoelectric layer and corresponds to a boundary of the acoustic reflection structure, to form a depolarized portion; and providing a top electrode layer on the piezoelectric layer.

Abstract: A structure including an electro-active-polymer (“EAP”). The structure can take the form of a strap, which includes two or more EAP film layers. The structure can further include one or more holders or end-grabbing portions. Methods of making and using the EAP structure are also envisioned.