Abstract: A method and apparatus for conditioning a polishing pad used in chemical mechanical planarization of semiconductor wafers is described. The apparatus includes a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge. The method includes providing a non-rotatable conditioning member configured to engage the polishing pad. The conditioning member includes a primary edge opposed to a secondary edge, wherein the primary edge and the secondary edge are both in contact with the polishing pad, and wherein the primary edge is generally parallel to the secondary edge. The method also includes moving the polishing pad in a forward direction, and pressing the conditioning member against the polishing pad.