Patents Examined by Paniel M Gumedzoe
  • Patent number: 8334170
    Abstract: A method for fabricating a semiconductor device is provided which includes providing a first device, a second device, and a third device, providing a first coating material between the first device and the second device, the first coating material being uncured, providing a second coating material between the second device and the third device, the second coating material being uncured, and thereafter, curing the first and second coating materials in a same process.
    Type: Grant
    Filed: June 27, 2008
    Date of Patent: December 18, 2012
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Dean Wang, Chien-Hsiun Lee, Chen-Shien Chen, Clinton Chao, Mirng-Ji Lii, Tjandra Winata Karta