Abstract: The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free.

Abstract: A plasma processing chamber including a slip cast part having a surface thereof exposed to the interior space of the chamber. The slip cast part includes free silicon contained therein and a protective layer on the surface which protects the silicon from being attacked by plasma in the interior space of the chamber. The slip cast part can be made of slip cast silicon carbide coated with CVD silicon carbide. The slip cast part can comprise one or more parts of the chamber such as a wafer passage insert, a monolithic or tiled liner, a plasma screen, a showerhead, dielectric member, or the like. The slip cast part reduces particle contamination and reduces process drift in plasma processes such as plasma etching of dielectric materials such as silicon oxide.

Abstract: A method and apparatus for generating a plasma in a gas using a thermal source and a heat source in a common reaction zone. A process gas is flowed to a reaction zone and heated with a thermal energy source. Within the same reaction zone, a current is passed in the gas to generate a plasma within the gas. The plasma is directed to a substrate for treatment. The substrate may be a silicon wafer as part of an etching, ashing, wafer cleaning, and chemical vapor deposition.

Abstract: A plasma processing system may include a vacuum vessel, a substrate table arranged in the vacuum vessel, and a radio-frequency power supply system for generating high-frequency waves. A waveguide may be provided for guiding high-frequency waves into the vacuum vessel, and a dielectric member may be arranged at an end portion of the waveguide. The plasma processing system may also include a conductive film arranged on the dielectric member and facing the substrate table, wherein the conductive film may have a thickness smaller than or approximately equal to a skin thickness of the conductive film.