Abstract: The present invention is a treatment solution supply method for supplying a treatment solution on a substrate by a pump through a supply path, which connects a treatment solution supply source and a discharge nozzle, wherein a storage portion for storing the treatment solution temporarily is disposed in the supply path between the treatment solution supply source and the pump. In the present invention another pump is further disposed in the supply path between the storage portion and the treatment solution supply source for supplying the treatment solution to the storage portion. The present invention comprises the step of maintaining the level height of the treatment solution in the storage portion at a predetermined height by supplying the treatment solution to the storage portion by the said another pump. According to the present invention, the pressure of a primary side of the pump is constantly maintained the same.

Abstract: In order to alleviate the affect of particles generated during operation of an elevation mechanism of a substrate conveyer means on the substrate that is transported in a substrate processing apparatus, a partition wall having a slit-like hole is provided in a casing that forms the outer housing of the elevation mechanism, whereby the casing is divided into a first chamber and a second chamber. A conveyer main unit holding a wafer is fixed to a rod-like support member. The support member has its end supported by a guide shaft. The guide shaft and a driving mechanism to move the support member upwards and downwards are provided in the first chamber. The support member descends and ascends along the guide shaft. A fan is disposed in the second chamber. A discharge outlet is formed at the bottom plane of the second chamber.

Abstract: A plasma process reactor is disclosed that allows for greater control in varying the functional temperature range for enhancing semiconductor processing and reactor cleaning. The temperature is controlled by splitting the process gas flow from a single gas manifold that injects the process gas behind the gas distribution plate into two streams where the first stream goes behind the gas distribution plate and the second stream is injected directly into the chamber. By decreasing the fraction of flow that is injected behind the gas distribution plate, the temperature of the gas distribution plate can be increased. The increasing of the temperature of the gas distribution plate results in higher O2 plasma removal rates of deposited material from the gas distribution plate. Additionally, the higher plasma temperature aids other processes that only operate at elevated temperatures not possible in a fixed temperature reactor.

Abstract: A plasma process apparatus having a plasma chamber with in situ monitoring, a monitoring method, and a method for in situ cleaning a plasma chamber. The apparatus includes a sampling manifold which induces flow of a sample gas from a plasma chamber through the manifold. A gas analyzer analyzes the sample gas flowing through the sampling manifold. The in situ monitoring method monitors an initial gas to establish background levels, and bakes the apparatus to reduce contaminants, if necessary. The monitoring method then monitors a process reaction and, after unloading a wafer and discharging a waste gas, monitors an in situ cleaning reaction. Monitoring involves inducing flow of a gas from the plasma chamber through the sampling manifold, and then analyzing the gas in the manifold with a gas analyzer. The cleaning method includes using a mixture of sulfur hexafluoride and chlorine to clean the plasma chamber after etching a polysilicon layer.

Abstract: An apparatus and method for performing material deposition on semiconductor devices. The apparatus provides an enclosure for defining a chamber. The chamber includes a metallic portion such as a conductor coil powered by a voltage generator. A gas, having a suspension of particles for treating the semiconductor devices, is introduced into the chamber and the powered conductor coil converts the gas to inductively coupled plasma and vaporizes the particles. The particles can then be deposited on the semiconductor devices.