Patents Examined by Pat Hightower
  • Patent number: 5439780
    Abstract: A class of silicon-containing materials display excellent sensitivity in the ultraviolet and deep ultraviolet for the formation of patterns by radiation induced conversion into glassy compounds. Materials are depositable from the vapor phase and show excellent promise for use such as resists in the fabrication of electronic and optical devices.
    Type: Grant
    Filed: April 29, 1992
    Date of Patent: August 8, 1995
    Assignee: AT&T Corp.
    Inventors: Ajey M. Joshi, Timothy W. Weidman
  • Patent number: 5428102
    Abstract: A series of polyimides based on the dianhydride of 1,4-bis(3,4-dicarboxyphenoxy)benzene (HQDEA) or on 2,2-bis[4(3-aminophenoxy)phenyl]hexafluoropropane (3-BDAF) are evolved from high molecular weight polyamic acid solutions yielding flexible free-standing films and coatings in the fully imidized form which have a dielectric constant in the range of 2.5 to 3.1 at 10 GHz.
    Type: Grant
    Filed: May 2, 1994
    Date of Patent: June 27, 1995
    Assignee: The United States of America as represented by the United States National Aeronautics and Space Administration
    Inventors: Anne K. St. Clair, Terry L. St. Clair, William P. Winfree