Abstract: A bus bar having reduced parasitic inductance and equal current path lengths. A bus bar of the present invention has a first plate connected to a collector of a first transistor, a collector of a second transistor, an emitter of a third transistor and an emitter of a fourth transistor; a second plate including a second plate input connected to a collector of the third transistor and a collector of the fourth transistor; a third plate including a third plate input connected to an emitter of the first transistor and an emitter of the second transistor; and a fourth plate which is connected to the first plate. The first plate, the second plate, and the third plate are disposed and arranged such that the lengths of the current paths from the fourth plate through the first transistor to the input of the third plate is equal to the length of the current path from the fourth plate through the second transistor to the input of the third plate.

Abstract: A dual-polarized antenna includes a planar line or surface array of reradiating elements of two different polarizations. Each reradiating element in one embodiment is a short-circuited vertical or horizontal dipole. The vertical and horizontal dipoles may be collocated on the array to form crossed short-circuited dipoles. The elements of each polarization form an array separate from the elements of the other polarization. Within each of the two separate arrays, the 1/.lambda. of each reradiator is adjusted to provide a phase shift which causes a collimated beam incident on the array to result in reradiation or "reflection" of energy in the form of a beam converging at a focal point. Therefore, each planar reradiator array acts as a parabolic reflector with a particular focal point. The focal points for the vertical and horizontal arrays are different, and a feed of the appropriate polarization is located at each of the two focal points.

Abstract: A semiconductor device module is formed of four identical frame sections which each have a flat base and perpendicularly extending strap terminal. Semiconductor chips are soldered to the center of the top surfaces of each base, and the devices are interconnected by flat brass strips having one end soldered to the top of one chip and the other end soldered to the base of an adjacent section. The base sections lie in a common plane at the bottom of an insulative filled insulation cup. The terminals extend parallel and out of the top of the cup.

Abstract: A radiator useful for radiating pulses with a duration of about 10 ms is disclosed. Such pulses occupy the frequency band from zero to a few hundred Hertz. For a given time variation of an electromagnetic signal, the energy radiated in the far field is proportional to (Is).sup.2, where I is the current amplitude in the antenna and s is the length of the radiator. Typical antenna designs cannot be used at very low frequencies with large relative bandwidths. However, the large current radiator disclosed, herein, is small, has antenna currents in the order of 10.sup.8 A, and requires a drive voltage of about 1 volt and drive current of 10.sup.4 A. This large current radiator is designed with a small antenna length s by using a design wherein the antenna current is n times larger than the drive current. This is accomplished by winding electrically conductive means n times around a shield so that the n forward loop wires are all on one side of the shield, and cover a surface area sxW.

Abstract: An electronically reconfigurable antenna includes individual antenna elements which can be reconfigured as active or parasitic elements in the process of variable mode operation. In the antenna, an active subset of antenna elements excites a wave on a parasitic subset of antenna elements, which are controlled by a plurality of electronically variable reactances.The plurality of electronically variable reactances is used to provide the reconfigurable array, which may operate in a plurality of modes of wave propagation. Furthermore, the plurality of variable reactances allow compensation for the inherently narrow operating bandwidth of the high-gain surface wave antennas.

Abstract: An RF-transparent sunshield membrane covers an antenna reflector such as a parabolic dish. The blanket includes a single dielectric sheet of polyimide film 1/2-mil thick. The surface of the film facing away from the reflector is coated with a transparent electrically conductive coating such as vapor-deposited indium-tin oxide. The surface of the film facing the reflector is reinforced by an adhesively attached polyester or glass mesh, which in turn is coated with a white paint. In a particular embodiment of the invention, polyurethane paint is used. In another embodiment of the invention, a layer of paint primer is applied to the mesh under a silicone paint, and the silicone paint is cured after application for several days at room temperature to enhance adhesion to the primer.

Abstract: A field monitor in the near field receives an antenna signal which approximates that which would be received by the monitor if located in the far field. In one aspect of the invention, the antenna signal is produced by an array of spaced apart receiving elements. In another aspect of the invention, the signal received from a near field sampling antenna is passed through a signal processor having the necessary characteristics to construct from the sample a signal corresponding to that which would have been received in the far field. Antenna element arrays are also used as plane wave sources permitting antenna testing with a radiating path length of one-eighth or one-quarter of the far field distance. Compact indoor antenna test ranges are also provided.

Abstract: In an antenna array consisting of a plurality of antennas, an antenna may behave as if its transmitted radiation emanates from a position, phase center, disposed away from the actual location. Probe antennas are used with a processor to locate the phase center of respective antennas at a selected frequency of transmission and to adjust the phase center to a desired location, thereby calibrating the antenna array for the selected frequency.

Abstract: Disclosed is a source of microwave radiation, namely a source enabling the absorption of multiple reflections for the illuminating of a lens in order to form an electronic sweeping antenna. The source includes a layered arrangement of elementary illuminators in a direction substantially parallel to the electrical field of the microwave energy transmitted. In one embodiment, each elementary illuminator has the following successively, in the direction of propagation of the energy: a plane forming a short circuit; a plane forming an incidence filter, parallel to the above plane, located at a distance from the above plane of the order of half of a wavelength, including two tracks parallel to each other and perpendicular to the electrical field between which resistive elements are connected; and, a plane bearing a rdiating element of the snake line type, extending in a direction substantially normal to the electrical field.

Abstract: A clutch for telescopic antenna including a disk shape clutch element and a shallow, cylindrical clutch element facing each other. The cylindrical clutch element is provide with a recess on its inner wall, and the disk shape clutch element is provided with a pair of sliding contacts which are urged in the radial directions and can come into contact with the inner wall surface of the cylindrical clutch element. An engagement ball provided in one of the sliding contacts can engage with the recess of the second element, securing the coupling of the two clutch elements.

Abstract: N-type semiconducting diamond is disclosed, which is intrinsically, i.e., at the time of diamond formation, doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile precursor compound for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond film in situ during its formation. By such in situ formation technique, shallow n-type impurity atoms, e.g., lithium, arsenic, phosphorous, scandium, antimony, bismuth, and the like, may be incorporated into the crystal lattice in a uniform manner, and without the occurrence of gross lattice asperities and other lattice damage artifacts which result from ion implanation techniques. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed.

Abstract: A distributed antenna system comprises a plurality N of spaced apart antennas 3, each antenna being connected to a RF line 2 via a circulator 4, wherein each circulator 4 is arranged to pass to its associated antenna a fraction 1/N of the RF power incident thereon.This can allow cost savings in providing the components needed for the antenna installation.

Abstract: An integrated circuit semiconductor device having an improved wiring structure is disclosed. An insulating film and a semiconductor layer are formed in sequence on an upper surface of a semiconductor body, and first and second wiring layers are formed in the semiconductor body and in the semiconductor layer, respectively. A plurality of circuit elements are formed in the semiconductor layer on the insulating film, and each of the elements is connected to the first and second wiring layers. When the elements are memory cells, the first wiring layers may be used as bit lines.

Abstract: An insulated gate type semiconductor device comprising an N channel transistor directly connected to an output terminal of the semiconductor device, the drain region of the N channel transistor comprising a region having a low-impurity concentration contiguous to the channel region, and the source region and a high-impurity concentration, comprising a region having a high-impurity concentration contiguous to the channel region, and an N channel transistor connected between the above mentioned N channel transistor and a low potential, the drain and source regions comprising regions having a high-impurity concentration contiguous to the channel region of the latter-recited N channel transistor.

Abstract: A first short-circuiting MOS FET with a break-through preventing function is connected between the gate and the cathode of a high sensitivity thyristor. A second MOS FET is connected between the gate and the source of the first MOS FET. A gate signal turns on the second MOS FET to reduce the gate voltage of the first MOS FET below threshold voltage. In turn, the short-circuit of the gate to the cathode of the thyristor is removed. Specifically, the gate signal is applied to the gate of the thyristor to trigger it. When forward voltage VAK applied between the anode terminal and the cathode terminal of the thyristor element is larger than the threshold voltage of the first MOS FET, the gate of the first MOS FET is biased to a voltage above the threshold voltage so that the first MOS FET is turned on. Therefore, the gate and the cathode of the thyristor element are short-circuited to prevent the break-through of the thyristor due to the an external transient surge voltage.

Abstract: A technique and arrangement for lowering the mismatch normally obtained, thereby increasing the bandwidth, in a standard rectangular-to-coaxial waveguide "T" junction coupling in an antenna system, such arrangement including, in a T-junction of a coaxial transmission line to a waveguide transmission line in which measured impedance values in the range of approximate 30 MHz in the UHF band must be within a 1.1:1 circle of voltage standing wave ratio, the improvement which achieves minimal reflection over said range of frequencies, according to which a diconical slug is connected between an upper and lower portion of the coaxial transmission line and mounted for support within the structure of the waveguide transmission line, and in which said diconical slug includes back-to-back conical sections such that the large diameter rims of the sections confront each other.

Abstract: An inside antenna is provided comprising a housing, a capacitor and an inductor located within the housing and cooperating to form an LC network, a radiator connected to the inductor, and a coaxial cable with its central conductor tapped to a selected location of the inductor. The capacitor is formed by a radiator plate to which the radiator and inductor are connected and a ground plate. A set screw is carried by the housing and engages the ground plate so that movement of the set screw varies the position of the ground plate relative to the radiator plate.

Abstract: A blocked impurity band detector having a high fill factor is comprised of a radiation detecting layer and an overlying blocking layer which are interposed between a plurality of rear contact regions and a frontside common electrical contact layer. Disposed over the surface of the frontside contact layer is a layer of metalization formed as a substantially transparent grid. Radiation enters the detecting layer through the grid, contact layer, and blocking layer. Each of the rear contact regions is conductively coupled to an end of a metallic conductor, or via, which is disposed through an insulating substrate. The opposite end of each of the metallic conductors exits the back surface of the substrate and is adapted for connection to an integrated circuit readout device.