Abstract: A VHF plasma CVD process in which a cathode electrode is electrically divided into a plurality of elements in the axial direction of a cylindrical substrate, and a very-high-frequency energy with a frequency in the range of 60 MHz to 300 MHz is supplied to each of the divided cathode electrode elements by way of a high frequency power supply means for generating a plasma in a reaction chamber thereby forming a deposited film; and a VHF plasma CVD apparatus suitable for carrying out the VHF plasma process.