Abstract: In a method for manufacturing a semiconductor laser device, striped grooves are formed in a compound semiconductor substrate (or crystal element) on both sides of a light emission area, Then, the compound semiconductor substrate on both outer sides of the striped grooves is etched, so that the compound semiconductor substrate is lower than at both outer sides of the striped grooves than at the light emission area. Then, Current blocking layers are buried in the compound semiconductor substrate except for the light emission area.