Abstract: Insulating resin composition for a semiconductor device having a multilevel interconnection layers formed by the resin and having a superior planarizing capability relative to a lower interconnection layer is provided, which resin being a cured product of a polyamic acid ester oligomer obtained by reacting an aromatic diamine and/or a diaminosiloxane with an aromatic tetracarboxylic acid ester obtained by reacting an aromatic tetracarboxylic acid dianhydride with an alcohol or alcohol derivative.
Type:
Grant
Filed:
May 2, 1989
Date of Patent:
July 21, 1992
Assignee:
Hitachi Chemical Co., Ltd.
Inventors:
Hiroshi Suzuki, Shunichiro Uchimura, Hidetaka Sato
Abstract: A group of substituted benzotriazoles unexpectedly improves the physical properties, particularly the tensile strength and tear strength, of peroxide cured organosiloxne elastomers.