Abstract: In some embodiments, the present disclosure relates to an etching apparatus. The etching apparatus includes a substrate holder disposed within a processing chamber and having a workpiece reception surface configured to hold a workpiece. A lower surface of the processing chamber has a first region that is directly below the workpiece reception surface and that is configured to receive a byproduct from an etching process. A baffle extends outward from a sidewall of the processing chamber at a vertical position between the substrate holder and the lower surface of the processing chamber. The baffle covers a second region of the lower surface. A byproduct redistributor is configured to move the byproduct from the first region of the lower surface to the second region of the lower surface that is directly below the baffle.

Abstract: A plasma etching apparatus for etching a semiconductor substrate comprises: a plasma chamber; a plasma generation device for sustaining a plasma within the plasma chamber; a substrate support disposed within the plasma chamber for supporting the semiconductor substrate, the substrate support comprising an electrically conductive structure; a power supply for providing an RF electrical signal having an RF power to the electrically conductive structure; and an annular dielectric ring structure comprising a backside surface, the backside surface comprising an electrically conductive coating; wherein the electrically conductive structure is spaced apart from and extends under the electrically conductive coating so that when RF power is provided to the electrically conductive structure the RF power couples to the electrically conductive coating. Associated methods are also disclosed.

Abstract: The present disclosure provides an electrostatic chuck, in which a heat transfer layer using a heat transfer fluid is disposed between a chuck main body disposed at an upper side of the electrostatic chuck and a chuck base disposed at a lower side of the electrostatic chuck, and the chuck main body is simply placed on the chuck base so as to be physically in contact with the heat transfer layer, such that heat may be stably transferred without damage even in a condition in which the heat transfer layer is at a high temperature, and the chuck main body may be easily separated from the chuck base for maintenance.

Abstract: A stage for mounting a substrate thereon, includes: an electrostatic chuck configured to attract the substrate; a base having a first region on which the electrostatic chuck is supported and a second region on which an edge ring arranged around the substrate is supported, the first region and the second region being divided by a groove extending in an annular shape; and a shield provided in the groove and configured to thermally separate the first region and the second region.

Abstract: A plasma processing apparatus includes a processing chamber, a radio frequency power source, and a magnetic-field generation unit. In the processing chamber, a sample is subjected to plasma processing. The radio frequency power source supplies radio frequency power for a microwave. The magnetic-field generation unit forms a magnetic field for generating plasma by an interaction with the microwave. The magnetic-field generation unit includes a first power source and a second power source. The first power source causes a current to flow in a first magnetic-field forming coil configured to forma magnetic field in the processing chamber. The second power source causes a current to flow in a second magnetic-field forming coil configured to form a magnetic field in the processing chamber. Sensitivity for magnetic-field changing by the first magnetic-field forming coil is higher than sensitivity for magnetic-field changing by the second magnetic-field forming coil.

Abstract: A plasma processing apparatus includes a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including an electrostatic chuck; a first ring disposed on the electrostatic chuck to surround a substrate on the electrostatic chuck and including an inner annular portion, an intermediate annular portion, and an outer annular portion, a top surface of the inner annular portion being higher than that of the intermediate annular portion, a top surface of the outer annular portion being higher than that of the inner annular portion; a second ring disposed on the intermediate annular portion; and an actuator configured to vertically move the second ring to maintain a top surface of the second ring at a first height greater than a height of the top surface of the inner annular portion and less than a height of the top surface of the outer annular portion.

Abstract: A filter module for a substrate processing chamber includes a plurality of exterior panels defining an interior, a plurality of internal panels defining a plurality of compartments within the interior of the filter module, and an adjustable capacitor arranged on a first panel of the plurality of internal panels within a first compartment of the plurality of compartments. The adjustable capacitor is coupled, through the first panel, to a motor located outside of the first compartment, and the adjustable capacitor is configured to receive a radio frequency input signal and provide a radio frequency voltage to the substrate processing chamber based on a position of the motor.

Abstract: A plasma processing apparatus includes a chamber, a lower electrode, an electrostatic chuck, an edge ring, a metal member, a driving unit, and a control device. The electrostatic chuck is provided on the lower electrode on which a substrate is placed. The edge ring is provided around the electrostatic chuck. The metal member is disposed along an outer wall of the lower electrode and is grounded. The driving unit moves the metal member along the outer wall of the lower electrode. The control device controls the driving unit to move the metal member so as to increase the area in which the outer wall of the lower electrode and the metal member overlap each other when viewed in a direction intersecting the surface of the outer wall of the lower electrode in accordance with an increase in the amount of wear of the edge ring.

Abstract: Embodiments include a plasma processing tool that includes a processing chamber, and a plurality of modular microwave sources coupled to the processing chamber. In an embodiment, the plurality of modular microwave sources include an array of applicators that are positioned over a dielectric body that forms a portion of an outer wall of the processing chamber. The array of applicators may be coupled to the dielectric body. Additionally, the plurality of modular microwave sources may include an array of microwave amplification modules. In an embodiment, each microwave amplification module may be coupled to at least one of the applicators in the array of applicators. According to an embodiment, the dielectric body be planar, non-planar, symmetric, or non-symmetric. In yet another embodiment, the dielectric body may include a plurality of recesses. In such an embodiment, at least one applicator may be positioned in at least one of the recesses.

Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support disposed in the plasma processing chamber, an annular baffle plate disposed so as to surround the substrate support, the annular baffle plate having a plurality of openings, a first annular plate disposed below the annular baffle plate, a second annular plate disposed below the first annular plate, the second annular plate having an annular overlapping portion vertically overlapping with a part of the first annular plate, a pressure detector configured to detect a pressure in the plasma processing chamber, and at least one actuator configured to vertically move at least one of the first and second annular plates so as to change a distance between the first annular plate and the second annular plate based on the detected pressure.

Abstract: An apparatus and method for processing a substrate using plasma, which has high plasma stability and process reproducibility, is provided. The method includes providing an apparatus for processing a substrate comprising a plasma generating region and a process region separate from the plasma generating region, placing the substrate including a silicon layer and an oxide layer in the process region, forming a hydrogen atmosphere in the process region by providing a hydrogen-based gas to the process region without passing through the plasma generating region, generating plasma by providing a fluorine-based gas to the plasma generating region, and providing the generated plasma to the process region to selectively remove the silicon layer compared to the oxide layer.

Abstract: An apparatus for processing a substrate is provided. The apparatus includes a processing apparatus and a controller. The processing apparatus includes a chamber. The controller includes a memory and a processor coupled to the memory. The memory stores computer-executable instructions for controlling the processor to control a process of the processing apparatus. The process includes first forming a first film in a first region of the substrate in the chamber by chemical vapor deposition. The process further includes second forming a second film in a second region of the substrate in the chamber by atomic layer deposition. The first forming and the second forming are performed without moving the substrate out of the chamber.

Abstract: Embodiments described herein provide a lid assembly of a chamber for independent control of plasma density and gas distribution within the interior volume of the chamber. The lid assembly includes a plasma generation system and a gas distribution assembly. The plasma generation system includes a plurality of dielectric plates having a bottom surface oriented with respect to vacuum pressure and a top surface operable to be oriented with respect to atmospheric pressure. One or more coils are positioned on or over the plurality of dielectric plates. The gas distribution assembly includes a first diffuser and a second diffuser. The first diffuser includes a plurality of first channels intersecting a plurality of second channels of the second diffuser.

Abstract: A two-dimensional frequency search grid is defined by a first coordinate axis representing an operating frequency setpoint of an RF signal generator in a first operational state and a second coordinate axis representing an operating frequency setpoint of the RF signal generator in a second operational state. The RF signal generator has a first output power level in the first operational state and a second output power level in the second operational state. The RF signal generator operates in an multi-level RF power pulsing mode by cyclically alternating between the first operational state and the second operational state. An automated search process is performed within the two-dimensional frequency search grid to simultaneously determine an optimum value for the operating frequency setpoint of the RF signal generator in the first operational state and an optimum value for the operating frequency setpoint of the RF signal generator in the second operational state.

Abstract: A mounting table, to which a voltage is applied, includes an electrostatic chuck having a mounting surface for mounting a target object and a rear surface opposite to the mounting surface, the electrostatic chuck having a first through-hole formed in the mounting surface; a base, which is in contact with the rear surface of the electrostatic chuck, having a second through-hole communicating with the first through-hole; a cylindrical spacer inserted in the second through-hole; and a pin accommodated in the first through-hole and the spacer. Gaps are formed between the pin and inner walls of the first through-hole and the spacer, and the gap between the first through-hole and the pin is greater than the gap between the spacer and the pin.

Abstract: The present invention realizes a plasma treatment device with which a film deposition rate and film thickness of a film formed on a substrate can be made uniform. A plasma treatment device includes: a plurality of antennas for plasma generation arranged in a vacuum chamber; and a plurality of groups of multiple gas injection ports arranged in the vicinity of lines that are substantially perpendicular to longitudinal directions of the plurality of antennas and extend in a direction in which the plurality of antennas are arranged with respect to each other. The plasma treatment device further includes a gas flow-rate control unit for controlling flow rates of gas injected from each of the groups of the multiple gas injection ports.

Abstract: In one exemplary embodiment described herein are innovative plasma processing methods and system that utilize direct measurement of direct current (DC) field or self-bias voltage (Vdc) in a plasma processing chamber. In one embodiment, a non-plasma contact measurement using the electric field effect from Vdc is provided. The Vdc sensing method may be robust to a variety of process conditions. In one embodiment, the sensor is integrated with any focus ring material (for example, quartz or doped-undoped silicon). Robust extraction of the Vdc measurement signal may be used for process control. In one embodiment, the sensor may be integrated, at least in part, with the substrate being processed in the chamber.

Abstract: Provided is a technique for stably applying a voltage to an edge ring. Provided is a substrate support including: a substrate mounting surface on which a substrate is mounted; an edge ring mounting surface on which an edge ring is mounted around the substrate mounting surface; and a conductive electrode formed on the edge ring mounting surface and configured to apply a voltage to the edge ring.

Abstract: The inventive concept relates to a substrate support unit provided in an apparatus for treating a substrate using plasma. In an embodiment, the substrate support unit includes a dielectric plate on which the substrate is placed, a lower electrode that is disposed under the dielectric plate and that has a first diameter, a power supply rod that applies RF power to the lower electrode and has a second diameter, and a ground member disposed under the lower electrode and spaced apart from the lower electrode by a first gap by an insulating member, the ground member including a plate portion having a through-hole formed therein through which the power supply rod passes, in which the through-hole has a third diameter.

Abstract: A gas supply block may include a first block, a second block and a third block. The first block may include a first gas inlet passage configured to supply a first process gas. The second block may include a second gas inlet passage configured to supply a second process gas. The third block may be combined with the first block and the second block. The third block may be configured to diffuse and supply the first process gas and the second process gas into gas supply lines connected to the processing spaces.