Abstract: Disclosed is An apparatus for treating a substrate includes a chamber having a treatment space provided therein to treat the substrate and having an entrance for introducing or withdrawing the substrate, a liner disposed in the treatment space, disposed adjacent to an inner sidewall of the chamber, and having an opening formed at a position of facing the entrance to introduce or withdraw the substrate, a supporting unit to support the substrate in the treatment space, a gas supplying unit to supply process gas to the treatment space, a plasma source to produce plasma from the process gas, and a door assembly to open or close the entrance.

Abstract: A device for supporting a heating crucible includes a supporting table having an upper surface in which a plurality of holes are formed, and a contamination prevention plate arranged at an entrance of each of the holes of the supporting table and having an opening portion corresponding to the hole and a shield portion extending along an inner wall of the hole.

Abstract: This application discloses the structure of an ESC stage where a chucking electrode is sandwiched by a moderation layer and a covering layer. The moderation layer and the covering layer have the thermal expansion coefficients between the dielectric plate and the chucking electrode. This application also discloses optimum total thickness of the ESC stage, optimum volume ratio of composite which the moderation layer is made of, and an optimum range of the thermal expansion coefficient of the composite. This application further discloses a substrate processing apparatus for carrying out a process onto a substrate as the substrate is maintained at a temperature higher than room temperature, comprising the electrostatic chucking stage for holding the substrate during the process.

Abstract: The present invention is generally directed to a system and process for rotating semiconductor wafers in thermal processing chambers, such as rapid thermal processing chambers and chemical vapor deposition chambers. In accordance with the present invention, a semiconductor wafer is supported on a substrate holder which, in turn, is supported on a rotor. During processing, the rotor is magnetically levitated and magnetically rotated by suspension actuators and rotation actuators positioned outside of the chamber.