Abstract: A process for measuring both the reflectance and sheet resistance of a thin film, such as a metal film or a doped semiconductor, in a common apparatus comprises: directing a beam of radiation from a radiation source on the common apparatus onto a portion of the surface of the thin film, sensing the amount of radiation reflected from the surface of the thin film, and contacting the surface of the thin film with a sheet resistance measurement apparatus on the apparatus at a portion of the surface of the thin film coincident with or adjacent to the portion of the thin film contacted by the radiation beam to measure the sheet resistance of the thin film. The sheet resistance measurement apparatus may, by way of example, comprise a 4 point probe or an eddy current measurement apparatus. The respective measurements may be carried out either simultaneously or sequentially.

Abstract: An apparatus and a method are disclosed for detecting particles in a particle-containing gas at a pressure greater than about 0 psig. The apparatus includes a gas distribution line containing a pressurized gas having a pressure greater than about 0 psig and a condensation nucleus counter in fluid communication with the pressurized gas in the gas distribution line. The condensation nucleus counter is adapted to receive a stream of the pressurized gas at a pressure substantially equal to the pressure of the pressurized gas in the gas distribution line. The condensation nucleus counter is constructed of materials resistant to corrosion and to reaction with the pressurized gas, which may be one or more reactive or toxic gases, such as those used in microchip processing, or an inert gas.