Abstract: An oxide superconductor article is provided having an oxide superconductor film having a thickness of greater than 0.5 microns disposed on a substrate, said article having a transport critical current density (Jc) of greater than or equal to about 105 A/cm2 at 77 K, zero field. The oxide superconductor film is characterized by high Jc and high volume percent of c-axis epitaxial oxide grains, even with thicknesses of up to 1 micron.
Type:
Grant
Filed:
December 22, 1999
Date of Patent:
January 9, 2001
Assignee:
Massachusetts Institute of Technology
Inventors:
John A. Smith, Michael J. Cima, Neville Sonnenberg