Abstract: A high-pressure processing system includes a first chamber, a second chamber adjacent the first chamber, a foreline to remove gas from the second chamber, a vacuum processing system configured to lower a pressure within the second, a valve assembly to isolate the pressure within the first chamber from the pressure within the second chamber, a gas delivery system configured to introduce a gas into the first chamber and to increase the pressure within the first chamber to at least 10 atmospheres, an exhaust line to remove gas from the first chamber, and a containment enclosure surrounding a portion of the gas delivery system and the exhaust line to divert gas leaking from the portion of the gas delivery system and the exhaust line to the foreline.

Abstract: The invention provides an OLED panel manufacturing method and OLED panel. The method comprises: forming first (21) and second (22) pixel electrodes inside each pixel unit (2); depositing an insulation film by an atomic layer deposition method, and patternizing to form a pixel electrode isolation insulation layer (3); the pixel electrode isolation insulation layer having a longitudinal portion (31) filling between the first (21) and second (22) pixel electrodes, and a latitudinal portion (32) having both ends covering respectively a part of the first pixel electrode (21) closer to the second pixel electrode (22) and a part of the second pixel electrode (22) closer to the first pixel electrode (21); forming a pixel isolation layer (4), and printing LOED elements (5); the invention can increase OLED panel resolution without changing printing accuracy so that the first (21) and second (22) pixel electrodes are completely insulated.

Abstract: Methods of dicing semiconductor wafers, each wafer having a plurality of integrated circuits, are described. A method includes forming a mask above the semiconductor wafer, the mask including a layer covering and protecting the integrated circuits. The mask and a portion of the semiconductor wafer are patterned with a laser scribing process to provide a patterned mask and to form trenches partially into but not through the semiconductor wafer between the integrated circuits. Each of the trenches has a width. The semiconductor wafer is plasma etched through the trenches to form corresponding trench extensions and to singulate the integrated circuits. Each of the corresponding trench extensions has the width.

Abstract: A method includes performing Chemical Mechanical Polish (CMP) on a wafer, placing the wafer on a chuck, performing a post-CMP cleaning on the wafer, and determining cleanness of the wafer when the wafer is located on the chuck.

Abstract: A memory device including a plurality of memory cells arranged in a crossbar configuration for a neural network is provided. Each of the memory cells includes a readout transistor, a charging transistor, a discharging transistor, and a stack capacitor array connected to one of source/drain regions of each of the charging transistor and the discharging transistor and a functional gate of the readout transistor for storing analog information.

Abstract: The present invention relates to a novel process for the preparation of printable, high-viscosity oxide media, and to the use thereof in the production of solar cells.

Abstract: A method for thermally induced recrystallization of a film having a perovskite structure can include exposing the perovskite structure to a liquid phase induction atmosphere sufficient to at least partially liquefy the film. The substrate with the film can be heated while in the atmosphere to a heating temperature above a critical recrystallization temperature until the film recrystallizes to reform the perovskite structure with reduced defects and increased grain size. The liquid phase induction atmosphere can be purged, and the substrate with the film having the reformed perovskite structure can be allowed to cool. The film having the perovskite structure can have a formula ABX3, (RA)2An?1BnX3n+1, or (RA2)An?1BnX3n+1, where A is a monovalent cation, B is divalent metal cation, n is an integer, X is a halide ion, RA is an alkylammonium cation and RA2 is an alkyldiammonium cation.

Abstract: A semiconductor substrate arrangement includes a carrier wafer and a plurality of semiconductor substrate pieces fixed to the carrier wafer and distributed laterally over the carrier wafer. The semiconductor substrate pieces of the plurality of semiconductor substrate pieces comprise a hexagonal shape.

Abstract: The present disclosure relates to a method and apparatus for performing a plasma enhanced ALD (PEALD) process that provides for improved step coverage. The process introduces a precursor gas into a processing chamber comprising a semiconductor workpiece. The first gas is ionized to form a plurality of ionized precursor molecules. A bias voltage is subsequently applied to the workpiece. The bias voltage attracts the ionized precursor molecules to the workpiece, so as to provide anisotropic coverage of the workpiece with the precursor gas. A reactant gas is introduced into the processing chamber. A plasma is subsequently ignited from the reactant gas, causing the reactant gas to react with the ionized precursor molecules that have been deposited onto the substrate to form a deposited layer on the workpiece.

Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a fabricated thin film capacitor formed by depositing a first dielectric layer on a first electrode layer utilizing a first process that is performed at a first temperature, depositing a second dielectric layer on the first dielectric layer utilizing a second process that forms a randomly-oriented grain structure for the second dielectric layer, depositing a third dielectric layer on the second dielectric layer utilizing a third process that is performed at a second temperature and that forms a columnar-oriented grain structure for the third dielectric layer where the second temperature is higher than the first temperature, and depositing a second electrode layer on the third dielectric layer to form the thin film capacitor. Other embodiments are disclosed.

Abstract: A bonding method of a flexible display module is provided. The bonding method includes: preparing a flexible display panel having a first bonding area; attaching a middle substrate to a surface of the flexible display panel away from the first bonding area; aligning a second bonding area of an integrated drive circuit with the first bonding area; pre-laminating the first bonding area and the second bonding area at a first temperature; stripping the flexible display panel; flattening the flexible display panel; and laminating the first bonding area and the second bonding area at a second temperature to form a flexible display module.

Abstract: A manufacturing method of a display substrate, a display substrate and a display device are provided. The manufacturing method of a display substrate including: forming a first metal pattern forming a first insulation layer; forming a second metal pattern; forming a second insulation layer forming a first conductive layer; patterning the first conductive layer to form a first conductive pattern; patterning the second insulation layer to form a second insulation pattern; wherein, an orthographic projection of the first conductive pattern on the base substrate and an orthographic projection of the second metal pattern on the base substrate have an overlapping part; and during patterning the second insulation layer, an orthographic projection of the first conductive pattern on the base substrate at least covers the overlapping part.

Abstract: A quantum dot includes a nanocrystalline core and an alloyed nanocrystalline shell made of a semiconductor material composition different from the nanocrystalline core. The alloyed nanocrystalline shell is bonded to and completely surrounds the nanocrystalline core.

Abstract: The present invention relates to an alkaline etching agent for treating a surface of a semiconductor substrate for solar cells, containing at least one hydroxystyrene polymer represented by the general formula (1) and an alkaline agent. According to the present invention, some effects are exhibited that the texture formation is made possible to a semiconductor substrate for solar cells at relatively lower temperatures with a shorter amount of time, thereby having excellent productivity.

Abstract: Methods and apparatus for depositing a cobalt layer in features formed on a substrate are provided herein. In some embodiments, a method of depositing a cobalt layer atop a substrate includes: (a) providing a substrate to a substrate support that is rotatable between two processing positions; (b) exposing the substrate to a cobalt containing precursor at a first processing position to deposit a cobalt layer atop the substrate; (c) rotating the substrate having the deposited cobalt layer to a second processing position; and (d) treating the substrate at the second processing position to remove contaminants from the cobalt layer.

Abstract: The invention provides a manufacturing method for complementary TFT device. The manufacturing method for complementary TFT device uses a solution method to continuously form a metal oxide semiconductor TFT and an organic semiconductor TFT; the metal oxide semiconductor TFT and the organic semiconductor TFT are electrically connected, and one of the metal oxide semiconductor TFT and the organic semiconductor TFT is an N-type channel TFT, and the other is a P-type channel TFT. The method can reduce the use of vacuum apparatus and high temperature apparatus, and explore the advantages of the solution method to realize large area and low-cost to reduce production costs and increase product competitiveness. The invention also provides a manufacturing method for OLED display panel, able to reduce production cost and increase product competitiveness.

Abstract: Embodiments disclosed herein generally relate to a substrate carrier system suitable for clamping a substrate and optionally a mask, the substrate carrier system having a stack of removable protective layers. In one embodiment, substrate carrier system is provide that includes a substrate carrier body having a protective layer stack disposed an outer mounting surface of the substrate carrier body. The substrate carrier body is configured to be transported into and out of a processing chamber. The protective layer stack has a plurality of removable protective layers which can be removed as needed to expose a “new” surface for chucking a substrate thereon.

Abstract: The present invention provides a TFT (Thin Film Transistor) substrate manufacture method, which includes forming a TFT gate electrode on a substrate, sequentially forming a first insulation layer, an active layer, a source electrode, and a drain electrode, and then forming a second insulation layer and coating a photoresist thereon, defining a pixel electrode pattern, forming a drain VIA hole on the second insulation layer, depositing a pixel electrode layer after preparing suede on the photoresist, and permeating the suede with a stripping liquid to remove the photoresist and the pixel electrode layer on the photoresist so as to form a pixel electrode connecting to the drain electrode via the drain VIA hole.

Abstract: The invention provides a groove structure for printing coating process and manufacturing method thereof. With the groove structure as an interpenetrating and co-axial stacked structure of a first and second grooves formed respectively by first causeway and second causeways, and the smallest part of the second groove opening greater than the largest part of the first groove opening; the inclining inner circumferential surface of the first groove hydrophilic, while the upper surface of the first causeway, the inclining inner circumferential surface of the second groove, and the upper surface of the second causeway hydrophobic, the present invention is able to increase the size of the groove opening for printing coating process without reducing the pixels per inch so that the ink drops can be more easily dripped into the groove. As such, the invention reduces the demand on printer precision and manufacturing difficulty to improve competitiveness.

Abstract: Processing methods comprising selectively orthogonally growing a first material through a mask to provide an expanded first material are described. The mask can be removed leaving the expanded first material extending orthogonally from the surface of the first material. Further processing can create a self-aligned via.