Abstract: An onium salt of formula (1) and a chemically amplified resist composition comprising the same as a PAG are provided. When processed by lithography, the resist composition exhibits a high sensitivity, minimal LWR and improved CDU independent of whether it is of positive or negative tone.

Abstract: In an approach to improve the field of photoacid generators (PAGs) through a new photoacid generator, in particular to a photoacid generator comprising a new polycyclic aromatic photoacid generator compound anion, and a photoresist composition, comprising said photoacid generator. Embodiments the present invention relate to a method of generating an acid using said photoresist composition and a method of forming a patterned materials feature on a substrate.

Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A photosensitive composition, a color filter prepared by using the photosensitive composition and a method for preparing the color filter. The photosensitive composition includes an alkali-soluble resin (A); an ethylenically unsaturated monomer (B); a photopolymerization initiator (C); a solvent (D); and a colorant (E), wherein the content of the photopolymerization initiator (C) is from 32 parts by weight to 70 parts by weight based on 100 parts by weight of the ethylenically unsaturated monomer(B).

Abstract: A method and an apparatus for direct writing photoetching by parallel interpenetrating super-resolution high-speed laser. The method of the present application uses a parallel interpenetrating algorithm. Firstly, a multi-beam solid light spot for writing is generated based on a writing light spatial light modulator; a multi-beam hollow light spot for inhibition is generated based on an inhibition optical spatial light modulator; the multi-beam solid light spot is combined with the multi-beam hollow light spot to generate a modulated multi-beam light spot; a writing waveform is output based on a multichannel acousto-optic modulator, a displacement stage moves at a constant speed until writing of a whole column of areas is completed, an optical switch is turned off, and the displacement stage conducts one-time stepping movement; the process is not stopped until all patterns are written.

Abstract: A negative-acting, photoresist composition, imageable by 365 nm radiation that is developable in aqueous base. Apart from solvent, this composition comprises: a) an aqueous base soluble phenolic film-forming polymeric binder resin having ring bonded hydroxyl groups; b) a photoacid generator c) a crosslinking agent which comprises an etherified melamine; d) a dye as described herein; e) a quencher system consisting essentially of an amine quencher, or a mixture of such amine quenchers, as described. This invention also pertains to processes of using this composition as a photoresist.

Abstract: Disclosed are a salt represented by formula (I) and a resist composition including the same:

Abstract: Compounds having three or more alkynyl moieties substituted with an aromatic moiety having one or more of certain substituents are useful in forming underlayers useful in semiconductor manufacturing processes.

Abstract: A carboxylate represented by formula (I), a quencher and a resist composition including the same: wherein R1, R2 and R3 each represent a halogen atom, an alkyl fluoride group or a hydrocarbon group which may have a substituent, —CH2— included in the hydrocarbon group may be replaced by —O—, —CO—, —S— or —SO2—, m1 represents an integer of 0 to 5, m2 represents an integer of 0 to 4, m3 represents an integer of 0 to 3, and X1 represents a single bond, —CH2—, —O—, —S—, —CO—, —SO— or —SO2—.

Abstract: A photosensitive resin composition comprising (A) a silicone skeleton-containing polymer, (B) a photoacid generator, and (C) a peroxide is coated to form a photosensitive resin coating which is unsusceptible to plastic deformation while maintaining flexibility. A pattern forming process using the composition is also provided.

Abstract: Fabricating a photomask includes forming a protection layer over a substrate. A plurality of multilayers of reflecting films are formed over the protection layer. A capping layer is formed over the plurality of multilayers. An absorption layer is formed over capping layer. A first photoresist layer is formed over portions of absorption layer. Portions of the first photoresist layer and absorption layer are patterned, forming first openings in absorption layer. The first openings expose portions of the capping layer. Remaining portions of first photoresist layer are removed and a second photoresist layer is formed over portions of absorption layer. The second photoresist layer covers at least the first openings. Portions of the absorption layer and capping layer and plurality of multilayer of reflecting films not covered by the second photoresist layer are patterned, forming second openings. The second openings expose portions of protection layer and second photoresist layer is removed.

Abstract: A resist underlayer composition and a method of forming patterns, the composition including a polymer including at least one of a first moiety represented by Chemical Formula 1-1 and a second moiety represented by Chemical Formula 1-2; a thermal acid generator including a salt composed of an anion of an acid and a cation of a base, the base having pKa of greater than or equal to about 7; and a solvent,

Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: The present invention discloses a photosensitive composition, comprising polyvinyl acetate (0% saponified) having a styryl type nitrogen-containing heterocyclic groups such as a styrylpyridinium or/and styrylquinolinium that possesses high UV light energy sensitivity with a small photosensitive group content, high solid content, high water resistance, and very sharp imaging characteristics and produced therefrom photosensitive compositions such as a photo-resist, photolithographic plates, screen printing stencil emulsion and film, and abrasion resistant photosensitive emulsion and film, and other photosensitive compositions being used for commercial and industrial applications.

Abstract: The present invention relates to a crosslinking agent compound in which a terminal crosslinkable functional group is capped with a silane-based protecting group, a photosensitive composition including the same, and a photosensitive material using the same.

Abstract: Provided is a resist compound, a method for forming a pattern using the same, and a method for manufacturing a semiconductor device. According to the present disclosure, the compound may be represented by Formula 1.

Abstract: A chemically amplified resist composition comprising a quencher containing an ammonium salt of an iodized or brominated phenol and an acid generator exerts a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having satisfactory resolution, LWR and CDU.

Abstract: A photosensitive resin composition comprising (A) a vinyl ether compound, (B) an epoxy-containing silicone resin, and (C) a photoacid generator is provided. The composition enables pattern formation using radiation of widely varying wavelength, and the patterned film has high transparency, light resistance, and heat resistance.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn? represent an n-valent anion, and n represents an integer of 1 or greater.