Abstract: A photoresist composition includes a conjugated resist additive, a photoactive compound, and a polymer resin. The conjugated resist additive is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline. The polyacetylene, polythiophene, polyphenylenevinylene, polyfluorene, polypryrrole, the polyphenylene, and polyaniline includes a substituent selected from the group consisting of an alkyl group, an ether group, an ester group, an alkene group, an aromatic group, an anthracene group, an alcohol group, an amine group, a carboxylic acid group, and an amide group. Another photoresist composition includes a polymer resin having a conjugated moiety and a photoactive compound. The conjugated moiety is one or more selected from the group consisting of a polyacetylene, a polythiophene, a polyphenylenevinylene, a polyfluorene, a polypryrrole, a polyphenylene, and a polyaniline.

Abstract: A molecular resist composition is provided comprising (A) a betaine type onium compound having a sulfonium cation moiety and a sulfonate anion moiety in a common molecule, the sulfonium cation moiety having a phenyl group substituted with an optionally heteroatom-containing monovalent hydrocarbon group, the phenyl group being attached to the sulfur atom, and (B) an organic solvent, the resist composition being free of a base resin. When processed by lithography using KrF, ArF excimer laser, EB or EUV, the resist composition is improved in dissolution contrast, EL, MEF, and LWR.

Abstract: The present invention discloses a photosensitive composition, comprising polyvinyl acetate (0% saponified) having a styryl type nitrogen-containing heterocyclic groups such as a styrylpyridinium or/and styrylquinolinium that possesses high UV light energy sensitivity with a small photosensitive group content, high solid content, high water resistance, and very sharp imaging characteristics and produced therefrom photosensitive compositions such as a photo-resist, photolithographic plates, screen printing stencil emulsion and film, and abrasion resistant photosensitive emulsion and film, and other photosensitive compositions being used for commercial and industrial applications.

Abstract: The present invention relates to a crosslinking agent compound in which a terminal crosslinkable functional group is capped with a silane-based protecting group, a photosensitive composition including the same, and a photosensitive material using the same.

Abstract: Provided is a resist compound, a method for forming a pattern using the same, and a method for manufacturing a semiconductor device. According to the present disclosure, the compound may be represented by Formula 1.

Abstract: A chemically amplified resist composition comprising a quencher containing an ammonium salt of an iodized or brominated phenol and an acid generator exerts a sensitizing effect and an acid diffusion suppressing effect and forms a pattern having satisfactory resolution, LWR and CDU.

Abstract: A photosensitive resin composition comprising (A) a vinyl ether compound, (B) an epoxy-containing silicone resin, and (C) a photoacid generator is provided. The composition enables pattern formation using radiation of widely varying wavelength, and the patterned film has high transparency, light resistance, and heat resistance.

Abstract: A resist composition which generates an acid upon exposure and whose solubility in a developing solution is changed due to an action of the acid, the resist composition including a base material component whose solubility in a developing solution is changed due to the action of an acid, an acid generator component which generates an acid upon exposure, and an organic acid which contains at least one carboxy group, in which the acid generator component contains a compound represented by formula (b1) in which R2011 to R2031 represent an aryl group, an alkyl group, or an alkenyl group. R2011 to R2031 have a total of four or more substituents containing fluorine atoms, Xn? represent an n-valent anion, and n represents an integer of 1 or greater.

Abstract: A resist composition containing a base material component (A) of which solubility in a developing solution is changed due to an action of an acid and a compound represented by Formula (bd1); in the formula, Rbd1 to Rbd3 each independently represent an aryl group which may have a substituent, provided that at least two of Rbd1 to Rbd3 are aryl groups having one or more fluorine atoms as substituents, and at least one of the fluorine atoms of the aryl group is bonded to a carbon atom adjacent to a carbon atom that is bonded to the sulfur atom in the formula, and the total number of the fluorine atoms is 4 or more; X? represents a counter anion.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of fluorosulfonic acid having an iodized or brominated aromatic ring, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition includes a resin having a group represented by General Formula (1) and a compound that generates an acid upon irradiation with actinic rays or radiation.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) of an ammonium salt of a carboxylic acid having an iodized or brominated hydrocarbyl group and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group has a high sensitivity and resolution and forms a pattern of good profile with reduced edge roughness and improved dimensional uniformity.

Abstract: The present invention relates to a chemically amplified photoresist composition including an alkali-soluble resin including a (meth)acrylate-based resin containing a (meth)acrylate-based repeating unit in which a heterocyclic compound is substituted via a divalent functional group containing an alkylene sulfide having 1 to 20 carbon atoms.

Abstract: A positive resist composition comprising a base polymer comprising recurring units (a) having the structure of an ammonium salt of an iodized or brominated phenol, and recurring units (b1) having an acid labile group-substituted carboxyl group and/or recurring units (b2) having an acid labile group-substituted phenolic hydroxyl group exhibits a high sensitivity, high resolution, low edge roughness and dimensional uniformity, and forms a pattern of good profile after exposure and development.

Abstract: A siloxane polymer comprising polysiloxane, silphenylene, isocyanuric acid, and polyether skeletons in a backbone and having an epoxy group in a side chain is provided. A photosensitive resin composition comprising the siloxane polymer and a photoacid generator is coated to form a film which can be patterned using radiation of widely varying wavelength. The patterned film has high transparency and light resistance.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group which may contain an ester bond or ether bond and a carboxylate anion having an iodized or brominated hydrocarbyl group offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: A resist composition comprising a base polymer and a quencher in the form of an ammonium salt consisting of an ammonium cation having an iodized aromatic ring bonded to the nitrogen atom via a C1-C20 hydrocarbylene group and an anion derived from an iodized or brominated phenol offers a high sensitivity and minimal LWR or improved CDU, independent of whether it is of positive or negative tone.

Abstract: An actinic ray-sensitive or radiation-sensitive resin composition contains a compound that generates an acid upon irradiation with actinic rays or radiation and a resin whose polarity increases by the action of an acid, in which the compound is represented by a specific General Formula (X).

Abstract: A chemically amplified photoresist composition comprising a triazole-based plasticizer and an alkali developable resin, which is capable of minimizing cracking of a photoresist obtained from the composition and improving adhesion to a substrate and sensitivity, and a photoresist film comprising a cured product of the chemically amplified photoresists composition.

Abstract: A photosensitive resin composition comprising a polymer containing a silphenylene skeleton and a fluorene skeleton and having a crosslinkable site in the molecule, a phenol compound having a Mw of 300-10,000, a photoacid generator, and a benzotriazole or imidazole compound has improved film properties. Even from a thick film, a fine size pattern can be formed.