Abstract: An alignment mechanism for aligning a substrate on a support member in a process chamber includes a set of guide pins extending from the upper surface of the support member equally spaced about the periphery thereof and spaced to receive a substrate therebetween and align a shadow ring thereover. The inner surfaces of the guide pins are slanted outwardly to form an inverted funnel for receiving and aligning the substrate on the support member. An annular gas groove in the upper surface of the support member provides communication for a supply of purge gas and directs the gas about the peripheral edge of the substrate. The guide pins which extend partially over the gas groove include slots therein that provide fluid communication through the guide pins from the gas groove to the peripheral edge of the substrate.

Abstract: A gas collector is disclosed for use with epitaxial reactors. The gas collector is in the form of a base and top portion that are interconnected by means of a sealing arrangement. The top portion is configured to cover the base and define a conduit therebetween. Inlets and outlets are provided to direct chemical vapors from a reaction chamber of the epitaxial reactor into the conduit and further into an exhaust pipe of the epitaxial reactor. The gas collector is capable of forming a hermetic seal with the lid of the reaction chamber in order to prevent escape of chemical vapors.

Abstract: A generally horizontally-oriented quartz CVD chamber is disclosed with front and rear chamber divider plates adjacent a centrally positioned susceptor and surrounding temperature control ring which divide the chamber into upper and lower regions. Improvement to the lifetime of CVD process components and related throughput improvements are disclosed. A getter plate for attracting some of the unused reactant gas is positioned downstream from the susceptor extending generally parallel to and spaced between the divider plate and the upper chamber wall. This getter plate also minimizes deposition on the chamber walls and improves the efficiency of a cleaning step. Reradiating elements are also located adjacent side walls of the chamber to heat cooler chamber wall areas. The getter plate and the reradiating elements plus the susceptor and surrounding ring are all made of solid chemical vapor deposited SiC to improve the life of the chamber.

Abstract: A method and apparatus for reducing surface sensitivity of a TEOS/O3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.

Abstract: Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35° C.

Abstract: An apparatus for and method of supporting a substrate such as a semiconductor wafer. Silicon carbide sleeves cover substrate support members such as upwardly extending arms of a substrate carrier which is part of a substrate support assembly. The substrate carrier including the upwardly extending arms holds the substrate spaced apart from a platform such as a susceptor during loading and unloading of a processing chamber. The platform defines apertures through which the arms extend. The arms are vertically movable through the apertures with respect to the platform and engage the substrate at the substrate's edge or alternatively, inwardly from the edge.

Abstract: In the invention, the atmosphere in a process chamber is conditioned using a primary pump, a secondary pump, speed control means for controlling the speed of the primary pump, and at least first gas analyzer means adapted for analyzing the extracted gases upstream from the primary pump and for producing first analysis signals. First signal processing means control the pumping speed as a function of the first analysis signals, so as to determine the variation in the pressure inside the process chamber during the transient stages of the treatment. In this way, deposits and turbulence are avoided in the process chamber, as are deposits in the pumping line, so that the secondary pump can be placed in the immediate vicinity of the process chamber.

Abstract: A method of forming a film on a substrate using transition metal or lanthanide complexes. The complexes and methods are particularly suitable for the preparation of semiconductor structures using chemical vapor deposition techniques and systems.

Abstract: The present invention provides an apparatus for deposition of thin films on a plurality of wafers through an atomic layer epitaxial process within a reaction chamber. The apparatus has a susceptor, provided within the reaction chamber to hold the wafers and has of a plurality of wafer stations. A plurality of wafer seating units are provided in the wafer stations, and seat the wafers in the wafer stations. A gas ejecting unit is provided within the reaction chamber, and ejects reaction gases onto the reaction surfaces of the wafers. A gas feeding unit feeds the reaction gases to the gas ejecting unit at predetermined time intervals so as to allow the gas ejecting unit to alternately eject the reaction gases through each of two gas outlets into the reaction chamber. A susceptor drive unit rotates the susceptor at a predetermined velocity and vertically moves the susceptor to an upper optimal reaction position close to the ceiling of the reaction chamber.

Abstract: A diffusion system for manufacturing semiconductor devices has an air curtain formed across a furnace opening for preventing the loss of heat energy from inside the furnace. The diffusion system includes the furnace having an opening through which a wafer boat having a plurality of wafers is loaded/unloaded; an air curtain apparatus for spraying a gas across the opening so as to form an air curtain cutting off the atmosphere inside of the furnace from the outside environment; and a controlling unit for controlling the air curtain apparatus by applying on/off signals to the air curtain apparatus. The diffusion system is controlled by the controlling unit so as to form the air curtain at the opening of the furnace while the wafer boat moves in and out of the furnace. After the wafer boat is completely loaded into the furnace, the air curtain is removed.

Abstract: A dispersion plate for evenly flowing at low pressure into a processing chamber vaporized material, such as a tungsten compound for deposition of metal layers onto a semiconductor, has a disc-like body with a center axis, an input face and an output face. The dispersion plate has a cup-like entrance along the center axis in its input face for receiving a stream of vaporized material and a plurality of passages for flow of vapor with each passage having a length and a diameter and extending radially from the entrance like the spokes of a wheel at inclined angles relative to the center axis from the input face to the output face. Two annular grooves are cut into the output face and intersect with the respective ends of the passages. The plate has a center hole with a flared diameter extending along the center axis from the entrance in the input face to the output face.

Abstract: An apparatus and method for depositing thin films on the surface of a device such as a spherical shaped devices. The apparatus includes an enclosure containing a plurality of apertures and a conductor coil. The apertures connect to conduits for inputting and outputting the devices as well as injecting and releasing different gases and/or processing constituents. A chamber is formed within the enclosure and is configured to be coaxial with the conductor coil. Devices move through the input conduit where they are preheated by a resistance-type furnace. The preheated devices then move into the chamber where chemical precursors are added and the devices are further heated to a predefined temperature associated with the chemical precursors by radio frequency energy from the conductor coil. At this time, the gases and/or processing constituents react with the heated device thereby growing a thin film on its outer surface.

Abstract: A one-piece gas distribution faceplate for a showerhead. The one-piece gas distribution faceplate includes a first surface, a second surface, and a third surface. The one-piece gas distribution faceplate comprises a plurality of first gas holes extending through the one-piece gas distribution faceplate between the first surface and the second surface. The one-piece gas distribution faceplate has an internal gas distribution cavity defined by a plurality of interconnecting channels. A plurality of second gas holes extend through the one-piece gas distribution faceplate between the first surface into a plurality of the interconnecting channels. The interconnecting channels are fluidly coupled to a plenum that is in turn connected to at least one gas conduit. The gas conduit extends to the third surface.

Abstract: A process gas stream (2) is generated, from which SiC is deposited on a substrate (4) by means of CVD. Furthermore, a second gas stream (3) of an inert gas is generated, which substantially surrounds the process gas stream (2) in its direction of flow. This results in a higher yield of the process gases.

Abstract: A vaporizer head for evenly flowing at low pressure into a processing chamber vaporized precursor compounds for deposition of metal and other layers onto a semiconductor, has a bulb-like body with a center axis, a lengthwise cavity, an input end and an output end. The cavity has an opening for receiving a stream of vaporized precursor compound. There are a plurality of passages for flow of vapor through the head, each passage having a length and a diameter. They extend radially from along and around the cavity like the spokes of a wheel at inclined angles relative to the center axis from the cavity to a tapered output surface of the head. The cavity has a well-like bottom for capturing any droplets or particles of precursor compound and preventing them from leaving the head except as vapor. The plurality of passages have sufficiently large diameters such that there is only a low pressure drop in the vapor flowing through the head.

Abstract: An improved vertical diffusion furnace for semiconductor manufacturing processes is provided. Temperature and flow rate management enables more uniform temperature distribution across the wafer during ramp up and ramp down, thereby preventing wafer warp.

Abstract: A multi-port gas injector for a vertical furnace that is utilized for low-pressure chemical vapor deposition of silicon dioxide using a tetraethyl orthosilicate (“TEOS”) source is provided. The multi-port gas injector has two or three ports for introducing TEOS into the vertical furnace. The gas injector includes a first and second section of tubing, preferably made of quartz, joined such that they are preferably substantially perpendicular. One end of the second section forms one of the ports. In one embodiment a hole located at the position where the first and second sections are joined forms a second port. In other embodiments, a third and, possibly, a fourth section of tubing are joined to the second section of tubing to form a second and, possibly, a third port. Additionally, the second section of tubing may have one or more tapers to reduce the diameter of the hole through which gas exits.

Abstract: An evaporation source includes an insulating container adapted to receive a volume of source material therein and a heater closely disposed around the container for heating and evaporating the source material into a vapor. The effective contact area of the container in contact with the source material is correlated to the volume of source material. The evaporation source is useful in the preparation of organic EL devices.

Abstract: The present invention provides an HDP-CVD tool using simultaneous deposition and sputtering of doped and undoped silicon dioxide capable of excellent gap fill and blanket film deposition on wafers. The tool of the present invention includes: a dual RF zone inductively coupled plasma source; a dual zone gas distribution system; temperature controlled surfaces within the tool; a symmetrically shaped turbomolecular pumped chamber body; a dual cooling zone electrostatic chuck; an all ceramic/aluminum alloy chamber; and a remote plasma chamber cleaning system.

Abstract: A part of the outer wall of the processing chamber supplied with an active gas for an intended processing forms a protruding section extending out from the outer wall into the air. An incident side window through which laser light is guided is mounted to the protruding portion. A baffle is provided inside the protruding portion for intercepting unnecessary portion of light guided in the processing chamber even if irregularly reflecting light arises, when laser light is guided into the window. An antireflection coating is coated on the air side surface of the window. A purge gas inlet port for blowing out a purge gas along the inside surface of the window is formed in the protruding portion.