Abstract: A self compensating clamp circuit and a method which limit the voltage of a pump circuit node to a maximum potential. A first pump circuit provides a first pumped potential at a first node which is greater than a supply potential. The first pumped potential is fed to a second pump circuit which generates a second pumped potential at a second node. The clamp circuit is interposed between the first and the second nodes and limits the maximum value of the first pumped potential to the second pumped potential plus a threshold voltage of the clamp circuit.
Type:
Grant
Filed:
April 24, 1996
Date of Patent:
May 13, 1997
Assignee:
Micron Technology, Inc.
Inventors:
Daniel R. Loughmiller, Stephen L. Casper, Greg A. Blodgett