Abstract: A method according to embodiments of the invention includes roughening (FIG. 6) a surface (58) of a semiconductor structure (46-48, FIG. 5). The semiconductor structure includes a light emitting layer (47). The surface (58) is a surface from which light is extracted from the semiconductor structure. After roughening, the roughened surface is treated (FIG. 7) to increase total internal reflection, or absorption at the surface, or to reduce an amount of light extracted from the semiconductor structure through the surface (58).

Abstract: [Object] A semiconductor device is configured to release heat from semiconductor chips more efficiently. [Means for Solution] A semiconductor device includes: a die pad 11 which has a die pad main surface 111 and a die pad rear surface 112; a semiconductor chip 41 mounted on the die pad main surface 111; a sealing resin portion 7 formed with a recess 75 for exposure of the die pad rear surface 11 and covering the die pad 11 and the semiconductor chip 41; and a heat releasing layer 6 disposed in the recess 75. The recess 75 has a recess groove 753 outside the die pad 11 in a direction in which the die pad rear surface 112 extends, and the recess groove 753 is closer to the die pad main surface 111 than to the die pad rear surface 112. The heat releasing layer 6 has a junction layer which is in contact with the die pad rear surface 112 and having part thereof filling the recess groove 753.

Abstract: A light-emitting diode (LED) with a bump structure on a sidewall is provided. The LED comprises a substrate, an epitaxial structure, a first conductive bump, a second conductive bump, a first extended electrode and a second extended electrode. The substrate has a top surface, a first side surface and an inclined surface between the top surface and the first side surface. The epitaxial structure is disposed on the top surface of the substrate, and comprises a N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a transparent conductive layer, a P-electrode and a N-electrode. The first extended electrode and the second extended electrode connect the P-electrode and the N-electrode, extend through the inclined surface, and are electrically connected to the first and the second conductive bumps, respectively. A mounting structure comprises said LED, a sub-mount and a connector mounting the LED onto the sub-mount.

Abstract: A method can include: growing a Ge layer on a Si substrate; growing a low-temperature nucleation GaAs layer, a high-temperature GaAs layer, a semi-insulating InGaP layer and a GaAs cap layer sequentially on the Ge layer after a first annealing, forming a sample; polishing the sample's GaAs cap layer, and growing an nMOSFET structure after a second annealing on the sample; performing selective ICP etching on a surface of the nMOSFET structure to form a groove, and growing a SiO2 layer in the groove and the surface of the nMOSFET structure using PECVD; performing the ICP etching again to etch the SiO2 layer till the Ge layer, forming a trench; cleaning the sample and growing a Ge nucleation layer and a Ge top layer in the trench by UHVCVD; polishing the Ge top layer and removing a part of the SiO2 layer on the nMOSFET structure; performing a CMOS process.