Patents Examined by Robert Limenak
  • SRAM with gate oxide films of varied thickness
    Patent number: 5327002
    Abstract: A semiconductor memory device of the SRAM type includes a memory cell including a pair of inverters each having a resistor and a driving transistor connected in series forming a storage node at the junction point thereof. Switching transistors in the memory cell are respectively connected between the storage nodes and bit lines. A film thickness of a gate oxide film of each of the switching transistors (transfer MOS transistors) is larger than a film thickness of a gate oxide film of each of the driving transistors (driver MOS transistors).
    Type: Grant
    Filed: May 8, 1992
    Date of Patent: July 5, 1994
    Assignee: Kawasaki Steel Corporation
    Inventor: Makoto Motoyoshi