Abstract: Provided are: an economically superior protein crystallization method capable of efficiently finding conditions for crystallization by using a small amount of protein; and a crystallization device used for the method. According to the present invention, a transparent sealed container 1 is filled with a solution of protein, a part of the transparent sealed container 1 being formed of a semipermeable membrane 2 with a molecular weight cut-off that inhibits passage of the protein while allowing passage of a precipitant, and then, a precipitant solution with changed concentration and/or pH of the precipitant is continuously supplied to the semipermeable membrane 2, to crystallize the protein with the precipitant that infiltrates from the semipermeable membrane 2 into the sealed container 1.

Abstract: A silicon wafer having a BMD density of 5×108/cm3 or more and 2.5×1010/cm3 or less in a region of 80 ?m to 285 ?m from the wafer surface when the silicon wafer is heat-treated at a temperature X (° C., 700° C.?X?1000° C.) for a time Y (min) and then subjected to an infrared tomography method in which the laser power is set to 50 mW and the exposure time of a detector is set to 50 msec. The time Y and the temperature X satisfy Y=7.88×1067×X?22.5.

Abstract: Methods for producing single crystal silicon ingots in which the dopant concentration in the silicon melt is controlled are disclosed. The control of the dopant concentration enhances ingot quality by the reduction or elimination of dislocations in the neck, crown, and main body portions of the single crystal silicon ingot.

Abstract: Susceptor assemblies comprising a susceptor with a top surface with a plurality of recesses and a bottom surface are described. A heater is positioned below the susceptor to heat the susceptor. A shield is positioned between the bottom surface of the susceptor and the heater. The shield increases deposition uniformity across the susceptor.

Abstract: A crystal growth apparatus includes: a chamber including a gas inlet, a gas outlet, a welded portion, and a water-cooling portion configured to water-cool a portion at least including the welded portion; an exhaust pump connected to the gas outlet; a dew point instrument disposed between the gas outlet and the exhaust pump, the dew point instrument being configured to measure a dew point of gas passing through the gas outlet.

Abstract: There is described a single crystal CVD diamond material comprising three orthogonal dimensions of at least 2 mm; one or more regions of low optical birefringence, indicative of low strain, such that in a sample of the single crystal CVD diamond material having a thickness in a range 0.5 mm to 1.0 mm and an area of greater than 1.3 mm×1.3 mm and measured using a pixel size of area in a range 1×1 ?m2 to 20×20 ?m2, a maximum value of ?n[average] does not exceed 1.5×10?4 for the one or more regions of low optical birefringence, where ?n[average] is an average value of a difference between refractive index for light polarised parallel to slow and fast axes averaged over the sample thickness; one or more regions of high optical birefringence, indicative of high strain, such that in said sample of the single crystal CVD diamond material and measured using said pixel size, ?n[average] is greater than 1.5×10?4 and less than 3×10?3; and is wherein every 1.3 mm×1.

Abstract: The present technology relates to diamond materials and structures created using chemical vapor deposition techniques (i.e., creation of synthetic diamond). The chemical vapor deposited diamond includes a multiphase material comprising (a) a single crystalline matrix phase and (b) plurality of diamond grains, each of the plurality of diamond grains being crystallographically distinct from the single crystalline matrix phase.

Abstract: A method of producing a silicon single crystal, including pulling a silicon single crystal by Czochralski method while a magnetic field is applied to a raw material melt, including: setting a diameter on pulling the silicon single crystal to 300 mm or more, setting a growth axis direction of the silicon single crystal to <111>, and growing the silicon single crystal so as to satisfy a relation of 1096/D?(0.134×M+80×R)/D>0.7, wherein D [mm] is the diameter on pulling the silicon single crystal, M [Gauss] is a central magnetic field strength at a surface of the raw material melt, and R [rpm] is a rotation rate of the silicon single crystal. This makes it possible to produce a <111> crystal with favorable macroscopic RRG distribution and microscopic variation of resistivity.

Abstract: In one implementation, a processing system includes a first transfer chamber coupling to at least one epitaxy process chamber, a second transfer chamber, a transition station disposed between the first transfer chamber and the second transfer chamber, a first plasma chamber coupled to the second transfer chamber for removing oxides from a surface of a substrate, and a load lock chamber coupled to the second transfer chamber. The transition station connects to the first transfer chamber and the second transfer chamber, and the transition station includes a second plasma chamber for removing contaminants from the surface of the substrate.

Abstract: A method of producing a monocrystalline silicon uses a monocrystal pull-up apparatus including a crucible, a crucible driver, a pull-up portion, a heat shield having a circular hollow cylindrical lower end portion, and a chamber. The heat shield satisfies a formula (1) below in growing the monocrystalline silicon, R?1.27×C??(1) where C represents a radius (mm) of a straight body of the monocrystalline silicon, and R represents an inner radius (mm) at the lower end portion of the heat shield.

Abstract: A system for depositing thin single crystal silicon wafers by epitaxial deposition in a silicon precursor depletion mode with cross-flow deposition may include: a substrate carrier with low total heat capacity, high emissivity and small volume; a lamp module with rapid heat-up, efficient heat production, and spatial control over heating; and a manifold designed for cross-flow processing. Furthermore, the substrate carrier may include heat reflectors to control heat loss from the edges of the carrier and/or heat chokes to thermally isolate the carrier from the manifolds, allowing independent temperature control of the manifolds. The carrier and substrates may be configured for deposition on both sides of the substrates—the substrates having release layers on both sides and the carriers being configured to have equal process gas flow over both surfaces of the substrate. High volume may be addressed by a deposition system comprising multiple mini-batch reactors.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10?5 ? or less is observed.

Abstract: Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

Abstract: Ingot puller apparatus for preparing silicon ingots that include a dopant feed system are disclosed. The dopant feed system include a dopant conduit having a porous partition member disposed across the dopant conduit. Solid dopant falls onto the partition member where it sublimes. The sublimed dopant is carried by inert gas through the partition member to contact and dope the silicon melt.

Abstract: Disclosed herein are systems and methods for the controlled crystallization of a compound. The controlled crystallization is achieved by applying an electric field across solutions of target compound and precipitant, whereby the electric field controls the rate of mixing.

Abstract: An object is to provide a nonpolar or semipolar GaN substrate having improved size and crystal quality. A self-standing GaN substrate has an angle between the normal of the principal surface and an m-axis of 0 degrees or more and 20 degrees or less, wherein: the size of the projected image in a c-axis direction when the principal surface is vertically projected on an M-plane is 10 mm or more; and when an a-axis length is measured on an intersection line between the principal surface and an A-plane, a low distortion section with a section length of 6 mm or more and with an a-axis length variation within the section of 10.0×10 ?5 ? or less is observed.

Abstract: FZ single crystals are pulled by melting a polycrystal with electromagnetic melting apparatus and then recrystallizing. First, a lower end of the polycrystal is melted; second, a monocrystalline seed is attached to the lower end of the polycrystal and melted beginning from an upper end thereof; third, between a lower section of the seed and the polycrystal, a thin neck is formed whose diameter (dD) is smaller than that (dI) of the seed; and fourth, between the thin neck section and the polycrystal, a conical section is formed. Before the conical growth, a switchover position (h?) of the polycrystal, the position at which the rate of polycrystal movement relative to the melting apparatus is to be reduced is determined, and the rate is reduced, in amount when the switchover position (h?) is reached.

Abstract: Bulk single crystal of aluminum nitride (AlN) having an areal planar defect density?100 cm?2. Methods for growing single crystal aluminum nitride include melting an aluminum foil to uniformly wet a foundation with a layer of aluminum, the foundation forming a portion of an AlN seed holder, for an AlN seed to be used for the AlN growth. The holder may consist essentially of a substantially impervious backing plate.

Abstract: Gas injector units for processing chambers having one or more of scavenging ports, differential pressure ports and variable surfaces for variable injector to substrate gap distances are described. Gas distribution assemblies and processing chambers incorporating the gas injector units are also described.

Abstract: Techniques for growing crystalline calcium carbonate solids such that the crystalline calcium carbonate solids include a volume of 0.0005 mm3 to 5 mm3, include a slaker to react quicklime (CaO) and a low carbonate content fluid to yield a slurry of primarily slaked lime (Ca(OH)2); a fluidized-bed reactive crystallizer that encloses a solid bed mass and includes an input for a slurry of primarily slaked lime, an input for an alkaline solution and carbonate, and an output for crystalline calcium carbonate solids that include particles and an alkaline carbonate solution; a dewatering apparatus that includes an input coupled to the crystallizer and an output to discharge a plurality of separate streams that each include a portion of the crystalline calcium carbonate solids and alkaline carbonate solution; and a seed transfer apparatus to deliver seed material into the crystallizer to maintain a consistent mass of seed material.