Abstract: The present disclosure relates to a method including the following steps: a) forming a waveguide from a first material, the waveguide being configured to guide an optical signal; b) forming a layer made of a second material that is electrically conductive and transparent to a wavelength of the optical signal, steps a) and b) being implemented such that the layer made of the second material is in contact with at least one of the faces of the waveguide, or is separated from the at least one of the faces by a distance of less than half, preferably less than a quarter, of the wavelength of the optical signal. The application further relates to a phase modulator, in particular obtained by such a method.

Abstract: Structures including an electro-optical phase shifter and methods of fabricating a structure including an electro-optical phase shifter. The structure includes a waveguide core on a semiconductor substrate, and an interconnect structure over the waveguide core and the semiconductor substrate. The waveguide core includes a phase shifter, and the interconnect structure includes a slotted shield and a transmission line coupled to the phase shifter. The slotted shield includes segments that are separated by slots. The slotted shield is positioned between the transmission line and the substrate.

Abstract: Photonic ring modulators with high tuning efficiency and small footprint can be formed in a hybrid material platform from a silicon bus waveguide vertically coupled to an optically active compound semiconductor (e.g., III-V) ring resonator. The performance of the modulator, e.g., in terms of the tuning efficiency and the maximum insertion loss, may be optimized by suitable levels of an applied bias voltage and a heater power of a heater optionally included in the ring modulator. The disclosed hybrid photonic ring modulators may be used, e.g., in photonic transceiver circuits with high lane count.

Abstract: An optical device includes a plurality of first Si waveguides that split and output an optical signal received from an input unit, plurality of LN waveguides that are included in a LN modulator and that transmit the optical signals that are split and output by the first Si waveguides, and a plurality of second Si waveguides that multiplex and output the associated optical signals that are output from the plurality of respective LN waveguides. The device includes an output unit that outputs the optical signal multiplexed by the second Si waveguides, and a plurality of Mach-Zehnder interferometers disposed on each of waveguides connected by the first Si waveguides, the LN waveguides, and the second Si waveguides, respectively. When there are differences among waveguide lengths of the LN waveguides, the device is configured such that the optical path lengths of the waveguides for the respective Mach-Zehnder interferometers are equalized.

Abstract: An image light guide for conveying a virtual image has a waveguide that conveys image-bearing light, formed as a flat plate having an in-coupling diffractive optic with a first grating vector diffracting an image-bearing light beam into the waveguide and directing diffracted light. An out-coupling diffractive optic is formed as a plurality of overlapping diffraction gratings including a first grating pattern having first grating vector k1 and a second grating pattern having a second grating vector k2 for expanding and ejecting the expanded image bearing beams from the waveguide into an expanded eyebox within which the virtual image can be seen.

Abstract: Performance improvement of an all-optical analog-to-digital converter (AOADC) addresses both RF and optical modeling of a leaky waveguide based optical spatial light modulator (SLM) using electro-optic (E-O) material. The E-O polymer provides improved sensitivity for SLM and achieves a broader bandwidth due to better velocity matching between RF and optical waves.

Abstract: A method of equalising optical losses, at a required operating wavelength, in waveguide sections in an optoelectronic device comprising a first semiconductor waveguide section and a second semiconductor waveguide section, the method comprising determining (1301) a first optical loss through the first waveguide section for a signal with the required operating wavelength, determining (1302) a second optical loss through the second waveguide section for the signal, determining (1303) a loss difference between the first optical loss and the second optical loss, determining (1304) a first bias voltage based on the loss difference and the operating wavelength, such that the loss difference is reduced, and applying (1305) the bias voltage to the first waveguide section.

Abstract: An electro-optic device includes a substrate and a waveguide on the substrate. The waveguide includes a layer stack including a plurality of electro-optic material layers interleaved with a plurality of interlayers and a waveguide core adjacent to the layer stack. The waveguide may include a pair of electrodes in electrical contact with the plurality of electro-optic material layers. The plurality of interlayers maintains a first lattice structure at room temperature and a cryogenic temperature. The plurality of electro-optic material layers maintains a second lattice structure and crystallographic phase at the room temperature and the cryogenic temperature.

Abstract: A modulator and method of fabrication thereof are provided. In various embodiments, the modulator is a Franz-Keldysh (FK) effect electro-absorption modulator. In an example embodiment, the modulator comprises a waveguide column formed from waveguide material deposited onto a substrate; a first contact layer doped with a P-type dopant and deposited on a first side of the waveguide column; a second contact layer doped with an N-type dopant and deposited on a second side of the waveguide column; and first and second contacts. The first contact is in electrical communication with the first contact layer and the second contact is in electrical communication with the second contact layer.

Abstract: An electro-optical converter that converts an electric signal to an optical signal. An optical signal is dragged from one optical channel to another optical channel using exciton polaritons that are generated in a layer that is adjacent the optical channels. The exciton polaritons are generated in response to an electrical signal which thereby results in the selective production of the optical signal.

Abstract: A spatial light modulator (SLM) comprised of a 2D array of optically-controlled semiconductor nanocavities can have a fast modulation rate, small pixel pitch, low pixel tuning energy, and millions of pixels. Incoherent pump light from a control projector tunes each PhC cavity via the free-carrier dispersion effect, thereby modulating the coherent probe field emitted from the cavity array. The use of high-Q/V semiconductor cavities enables energy-efficient all-optical control and eliminates the need for individual tuning elements, which degrade the performance and limit the size of the optical surface. Using this technique, an SLM with 106 pixels, micron-order pixel pitch, and GHz-order refresh rates could be realized with less than 1 W of pump power.

Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.

Abstract: A phase-shifter for a light-transmitting waveguide is segmented into multiple segments that can be calibrated to the overall length of a conventional single phase-shifter. Each segment receives a control signal, which can be a single bit signal, with the phase-shift capability of the segmented phase-shifter controlled by which segment(s) receive(s) a control signal. In one implementation, a binary weighting is applied to determine segment lengths. Smaller segments can be increased in length to achieve a 2? offset of the phase shift produced by the segment while maintaining the same binary relationship among segments. In another embodiment, multiple segments of uniform lengths can be used for a single phase-shifter with each segment controlled by an n-bit signal.

Abstract: Optical waveguides and couplers for delivering light to an array of photonic elements in a photonic integrated device. The photonic integrated device and related instruments and systems may be used to analyze samples in parallel. The photonic integrated device may include a grating coupler configured to receive light from an external light source and optically couple with multiple waveguides configured to optically couple with sample wells of the photonic integrated device.

Abstract: Fiber optic connectors, including SC connectors having a unitary housing that supports a ferrule and also allows for disengagement and release of the connector from, e.g., an adapter. The unitary housing includes a pair of release arms pivotal relative to a main body of the unitary housing, where pivoting of the release arms enables engagement and disengagement of corresponding latch arms in an adapter, for example.

Abstract: An electro-optical intensity modulation apparatus has a non-linear optical substrate and electrodes. The non-linear optical substrate is provided with a first branch waveguide, a second branch waveguide, a first channel waveguide and a second channel waveguide thereon. The first channel waveguide and the second channel waveguide are disposed between the first branch waveguide and the second branch waveguide, and the first channel waveguide and the second channel waveguide are branched from the first branch waveguide and converged at the second branch waveguide.

Abstract: The optical modulator includes a lower cladding layer formed on a substrate, a core formed on the lower cladding layer, and an upper cladding layer formed on the core. The core is made of an InP-based semiconductor having a bandgap corresponding to a desired wavelength. Refractive indexes of the lower cladding layer and upper cladding layer are equal to or less than a refractive index of InP.

Abstract: A first transmission line comprises a first pair of electrodes receiving an electrical drive comprising first and second drive signals, which are loaded by a first series of p-n junctions applying optical phase modulation to respective optical waves propagating over a first section of the first and second optical waveguide arms of an MZI. A second transmission line comprises a second pair of electrodes configured to receive the electrical drive after an electrical signal delay. The second pair of electrodes are loaded by a second series of p-n junctions applying optical phase modulation to the respective optical waves propagating over a second section of the first and second optical waveguide arms after propagation over the first section. An electrode extension structure provides the electrical drive to the second pair of electrodes, and comprises an unloaded transmission line portion imposing the electrical signal delay based on an optical signal delay.

Abstract: Various embodiments of the present disclosure are directed towards an integrated chip including a waveguide and a heater structure. The waveguide is disposed on a substrate and comprises an active region that extends continuously along a first distance. The heater structure overlies the waveguide. The heater structure comprises a conductive structure over the active region and a vertical structure disposed between the conductive structure and the substrate. The vertical structure comprises a conductive upper vertical segment and a lower vertical segment. The conductive structure and the conductive upper vertical segment continuously laterally extend across a second distance that is greater than or equal to the first distance. The first distance is greater than a width of the conductive structure.

Abstract: A semiconductor structure comprises a substrate; an oxide layer on the substrate; a set of group III nitride layers on the oxide layer; and a set of silicon carbide layers located on the set of group III nitride layers.