Abstract: A power monitoring system including a vertical cavity surface emitting laser generating an emission. A beam splitter optically positioned to receive the emission and split the emission into a first portion and a second portion. A monitor optically positioned to receive the first portion of the emission. An output of the monitor is used to control emissions of the vertical cavity surface emitting lasers.

Abstract: An adapter assembly is provided for interconnecting a pair of opposing optical fiber connectors generally along an optical axis. A unitary adapter housing has an axial cavity extending in a direction between opposite ends thereof. One end of the housing has a first interconnection operatively associated with a first one of the air of opposing optical fiber connectors. A unitary insert is mounted in the axial cavity of the adapter housing and includes a second interconnection operatively associated with the second of the pair of opposing optical fiber connectors at the opposite end of the housing.

Abstract: An optical couplers and optical coupling system for coupling a source of non-coherent light to a light distribution harness, wherein the couplers are polygonal in cross section to increase light mixing, and the coupler has inlet and outlet arms, and an intermediate bend region configured to achieve compactness and minimal light loss through the bend region. In one embodiment, the bend region is an integral part of the coupler, with the inlet arm having a different cross-sectional dimension from the outlet art in such manner that substantially all light directed from the inlet portion to the bend portion reaches the outlet arm portion, and light rays parallel to the inlet axis are reflected in the bend portion to be directed substantially parallel to the outlet axis. In a second embodiment, the bend region comprises a prism having a pair of parallel spaced surfaces, and inlet, outlet, and third surfaces that are non-parallel to the spaced surfaces.

Abstract: A solid-state laser in which a rod (10) of lasing material is held within an optical cavity formed within a cooling block (40) having a highly surface facing the rod. A longitudinal slit (44) formed in the block from the optical cavity to the outside allows the pumping light from an emission line (36) of semiconductor stripe lasers (30) fabricated on a laser bar (28) to irradiate the laser rod and multiply reflect within the optical cavity. Thereby, pump light is efficiently absorbed by the laser rod, and the laser rod is thermally controlled. Alternatively, cooling liquid (124) can flow axially along the laser rod and within an axially extending optical cavity formed by a reflective coating (125) deposited on a tube (122) enclosing the cooling liquid and having a slit (126) through which pump light is irradiated.

Abstract: A light directing film including a first surface and a second structured surface. The structured surface includes a repeating pattern of prism zones including at least a first zone having a plurality of prism elements with peaks disposed at a first distance from a reference plane and a second zone having a plurality of prism elements with peaks disposed less than the first distance from a reference plane. The width of the first zone preferably measures less than about 300 microns.

Abstract: An InP-based opto-electronic integrated circuit including an active layer having one or more quantum wells (36, 38). According to the invention, a barrier layer (34) of AlGaInAs is formed, preferably between the quantum wells and the substrate (30) to prevent the migration of species from the substrate and lower InP layers that tend to shift the emission wavelengths of the quantum wells to shorter wavelengths, i.e., a blue shift. The barrier layer can be patterned so that some areas of the quantum wells exhibit blue shifting to a shorter wavelength while other areas retain their longer wavelength during annealing.

Abstract: An external cavity, continuously tunable wavelength source comprising a coherent light source having an external cavity including a reflector, such as a mirror or right-angle prism, for reflecting a selected wavelength from a diffraction grating back into the coherent light source. The wavelength is selected by simultaneous rotation and translational movement of the reflector about a pivot point such that the optical path length of the external cavity is substantially identical to a numerical integer of half wavelengths at a plurality of tunable wavelengths about a central wavelength of a tunable bandwidth for the source such that cavity phase error is zero at the central wavelength and is maximally flat on either side of the center wavelength within the tunable bandwidth. The location of said pivot axis is chosen to set the cavity phase error equal to zero and its first and second derivatives substantially equal to zero at exactly one wavelength.

Abstract: A light absorption modulator includes a semiconductor substrate of a first conductivity type; a first cladding layer of the first conductivity type disposed on the substrate; an optical waveguide disposed on the first cladding layer and including a multiple quantum well optical waveguide layer through which light travels and first and second light confinement layers respectively disposed on opposed surfaces of the optical waveguide layer to confine light in the optical waveguide layer; and a second cladding layer of a second conductivity type, opposite the first conductivity type, disposed on the optical waveguide, one of the first and second cladding layers being n type, the one of the first and second light confinement layers that contacts the n type cladding layer being p type, and light traveling through the optical waveguide layer being modulated by applying an electric field to the optical waveguide layer.

Abstract: An electrostatically controlled cantilever apparatus for continuous tuning of the resonance wavelength of a Fabry-Perot cavity is disclosed. A resonant cavity is formed between two distributed Bragg reflector (DBR) mirrors each composed of multiple DBR layers. One such layer is replaced with a layer which has been fully oxidized except for a small aperture. This layer provides both optical and current confinement which allows for low threshold currents and high output power.

Abstract: When an electric signal outputted from a signal source (101) is converted to a light signal in an electrica-optical converting portion (104), a distortion component such as secondary or tertiary distortion is caused in the light signal to deteriorate transmission quality. Therefore, the light signal outputted from the electrica-optical converting portion (104) is further intensity-modulated with the same electric signal in an external light modulation portion (106) to forcibly cause a distortion which is out of phase with and of the same amplitude as the distortion component caused in the electrical-optical converting portion (104), thereby canceling the distortion component included in the light signal. Consequently, an optical transmission system capable of high-quality optical transmitting can be realized while employing a device having equivalent performance with the conventional devices.

Abstract: A semiconductor device includes a first conductivity type cladding layer; a second conductivity type cladding layer; an active layer of a semiconductor sandwiched between the first conductivity type cladding layer and the second conductivity type cladding layer; and a second conductivity type superlattice barrier layer sandwiched between the active layer and the second conductivity type cladding layer and having a superlattice structure including a first compound semiconductor having a larger energy band gap than the active layer and a second compound semiconductor having a smaller energy difference in the conduction band than the first compound semiconductor and a larger energy difference in the valence band than the first compound semiconductor, the first and second conductivity type compound semiconductors being alternatingly laminated in at least one pair of layers.

Abstract: A laser apparatus for generating laser beams of predetermined wavelengths comprises a solid-state laser medium for generating a light beam having predetermined at least three fundamental wavelengths, at least three wavelength converters which respectively convert the light beam into harmonics corresponding to three primary colors of blue, green, and red, the wavelength-converter being circumferentially arranged, wavelength-converter holder for holding the wavelength converters, light blocking portions disposed between the wave length converters; rotating unit for rotating the wavelength-converter holder, thereby repeatedly positioning each of the wavelength converters and each of the light blocking portions on an optical axis of the solid-state laser medium, and a laser resonant optical system which resonates the light beams generated by the solid-state laser medium and outputs the harmonics converted by the wavelength converters.

Abstract: A laser diode power combiner comprises a dye laser operably coupled to an array of laser diodes for combining optical power from the laser diodes into a single, coherent laser beam.

Abstract: A method for fabricating a semiconductor laser device includes successively epitaxially growing a quantum-well structure active layer and a second conductivity type Al.sub.r Ga.sub.1-r As first upper cladding layer on a first conductivity type GaAs substrate, forming an SiO.sub.2 film on a region in a vicinity of the laser resonator facet on the second conductivity type first cladding layer, annealing, thereby absorbing Ga from the second conductivity type first upper cladding layer to form and diffuse vacancies to reach the quantum-well structure active layer, thereby disordering the quantum-well structure active layer in a region in the vicinity of the laser resonator facet. Therefore, it is possible to form a window structure by disordering the quantum-well structure active layer without generating crystal transitions.

Abstract: To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6<y<1.0), and the carrier blocking layers are made of a material having a wider band gap and a lower refractive index than the material of the waveguide layers.

Abstract: A semiconductive substrate (101) with a surface (102) having a first stack of distributed Bragg reflectors (109) disposed on the surface (102) of the semiconductive substrate (101). A first transition region (140) is disposed on the first stack of distributed Bragg reflectors (109) with a first cladding region (113) being disposed on the first transition region (140). An active area (117) is disposed on the first cladding region (113) with a second cladding region (123) being disposed on the active area (117). A second transition region (145) having a layer (255) of aluminum arsenide is disposed on the second cladding region (123) with a second stack of distributed Bragg reflectors (127) being disposed on the second transition region (145).

Abstract: A construction in which a light emitting/receiving element and an optical fiber are optically coupled by a lens system formed by a biconvex aspherical lens. This lens is featured by: a first lens surface (R1) and a second lens surface (R2) both having a positive refracting power. At least one lens surface is formed by an aspherical surface. A distance L between the light emitting portion and the light receiving portion is 1.3129 mm<L<2.0129 mm. Lens thickness t at its center is 0.2147 mm<t<0.8822 mm; and 0.5<.vertline.f/.phi..vertline.<2.2632 where f=focal length of the lens, and .phi.=incident pupil diameter.

Abstract: A laser imaging apparatus comprising:a laser diode which is always operable in a linear lasing region;an amplitude modulator for amplitude modulating said laser diode for a digital image signal applied to said laser diode, when said digital image signal has a code value in a first range of code values in the mid to high range of signal code values; anda high speed pulse width modulator for pulse width modulating said laser diode when said digital signal, which is applied to said laser diode, has a code value in a second range of code values below said first range of code values, said laser diode being operated at a constant predetermined power level which is above the threshold power level of said laser diode.

Abstract: A vertical cavity surface emitting laser having a planar structure, having an implantation or diffusion at the top of the mirror closest to the substrate or at the bottom of the mirror farthest from the substrate, to provide current confinement with the gain region, and having an active region and another mirror formed subsequent to the implantation or diffusion. This structure has an implantation or diffusion that does not damage or detrimentally affect the gain region, and does provide dimensions of current confinement that are accurately ascertained. Alternatively, the implantation or diffusion for current confinement may be placed within the top mirror, and several layers above the active region, still with minimal damage to the gain region and having a well-ascertained current confinement dimension.

Abstract: The invention relates to a method of fabricating an electro-optical device which comprises integrating a semiconductor component with a polymeric optical waveguide component. According to the invention, a semiconductor component obtained by epitaxial lift-off (ELO) is embedded in a waveguide device which in addition to a polymeric optical waveguide structure comprises an appropriate cavity. The invention further pertains to an integrated electro-optical device attainable by means of this ELO technique. Notably, it concerns an integrated electro-optical device in which the polymeric waveguide component and the semiconductor component are integrated on a substrate made of a different material from that of the semiconductor component, preferably a material with good heat dissipation, such as silicon. Preferably, the polymeric waveguide component comprises a polymer in which waveguide channels have been provided by bleaching.