Abstract: A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation.

Abstract: The invention relates to a coating method and to a coating device for coating a body. A magnetron cathode having a target is arranged in the vacuum chamber. Electrical power is supplied to the magnetron cathode such that a plasma is generated and the target is sputtered in order to deposit a coating on the body. The electrical power is periodically supplied within a period duration T according to the HIPIMS method as cathode pulses, wherein each cathode pulse comprises at least two cathode sub-pulses and an intervening cathode sub-pulse break. In order to be able to deposit coatings having favorable properties in a particularly favorable manner by using the chopped HIPIMS method, a bias voltage is applied to the substrate to be coated with bias voltage pulses, wherein each bias voltage pulse comprises at least two bias sub-pulses and an intervening bias sub-pulse break.

Abstract: The present invention relates to a manufacturing apparatus and a manufacturing method for microwave means. The manufacturing apparatus (1) for microwave means comprises: a fixture (10, 10?), the fixture (10, 10?) comprising a base (11) capable of rotating about a first axis (A1), and a carrier (12) capable of swinging about a second axis (A2), the carrier (12) being connected to the base (11) so as to hold an insulating substrate (40), wherein the first axis (A1) intersects the second axis (A2); a source (20) for releasing metal ions towards the insulating substrate (40); and a controller (30), the controller (30) coupled to the fixture (10, 10?) and the source (20) and configured to control a movement pattern of the fixture (10, 10?) and/or an angle of the source (20) such that the insulating substrate (40) receives the metal ions from a plurality of angles and a metal layer (50) is formed over all surfaces (41) of the insulating substrate (40).

Abstract: A bismuth ferrite film material, a method for integrally preparing a bismuth ferrite film on a silicon substrate at a low temperature, and an application, includes: magnetron sputtering a bottom electrode, a buffer layer and a bismuth ferrite film on one surface of a Si substrate in sequence from bottom to top at a processing temperature of 300-400° C.; reducing the temperature to room temperature; and a top electrode is deposited via magnetron sputtering on the surface of the bismuth ferrite film; the buffer layer mentioned hereof is a conductive oxide which matches the lattice of bismuth ferrite and is of a perovskite structure (ABO3). According to the present invention, the temperature for preparing the bismuth ferrite film material can be reduced to 450° C. or below, and the bismuth ferrite film material has a high spontaneous electric polarization.

Abstract: There is provided a method of processing a substrate using a substrate processing apparatus including: a processing container configured to process the substrate therein; a plasma generation space formed inside the processing container; a processing space in communication with the plasma generation space via a partition plate; a stage provided inside the processing space and configured to place the substrate on a top surface of the stage; and a lifting mechanism configured to raise and lower the substrate on the stage, the method including, during a plasma processing on the substrate in the processing space, raising and lowering the substrate using the lifting mechanism to cause a potential change in the substrate during the plasma processing.

Abstract: An installation, a carrier, and a method for coating eyeglass lenses are provided, wherein a carrier with eyeglass lenses held in a rotatable manner is conveyed in succession in different coating devices or coating lines, in order to coat in an alternating manner opposite sides of the eyeglass lenses and/or to apply different coatings. In particular, the carriers with the eyeglass lenses are conveyed from a coating device or coating line by an evacuated transfer chamber to another coating device or coating line.

Abstract: Embodiments of the present disclosure provide a semiconductor processing apparatus and a magnetron mechanism thereof. The magnetron mechanism is applied to the semiconductor processing apparatus and includes a backplane, an outer magnetic pole, and an inner magnetic pole. The outer magnetic pole is arranged on a bottom surface of the backplane and encloses to form accommodation space. The inner magnetic pole is arranged on the bottom surface of the backplane and located in the accommodation space. The inner magnetic pole can move to change corrosion areas of the target material. The distance between the inner magnetic pole and the outer magnetic pole is always greater than a predetermined distance during the movement. With the semiconductor processing apparatus and the magnetron mechanism thereof of embodiments of the present disclosure can achieve the full target corrosion in a sputtering environment in a high-pressure state.

Abstract: A sputtering apparatus includes a back plate supporting a sputtering target, a magnet module disposed under the back plate and including a magnet unit reciprocating in a first direction, a first shielding member attached on a portion of the magnet unit, moving together with the magnet unit, and covering at least a portion of the magnet unit, a protective sheet disposed between the back plate and the magnet module, and a second shielding member disposed between the back plate and the magnet module, and having a fixed position.

Abstract: Disclosed is a method of manufacturing a spinal cage for improving a bone union rate, including preparing a cage body to be processed including a polymer material, sanding the surface of the cage body roughly by spraying ceramic beads onto the surface of the cage body, and depositing a coating film with a metal material on the surface of the cage body, in which the metal material of the coating film has higher biocompatibility than the polymer material of the cage body, simultaneously achieving stability of the polymer material and high biocompatibility of the metal material.

Abstract: The present invention relates to a sputter deposition system that comprises a rotatable substrate holder for holding one or more substrates and configured to allow rotation of the one or more substrates around their own axis and around the rotation axis of the rotatable substrate holder. The present invention provides for the coating of one or more substrates at the top end of the said one or more substrates and provides a homogeneous deposition of the substrate or substrates. Further, hereby disclosed is a method for depositing a coating on one or more substrates by means of the sputter deposition system described herein.

Abstract: A deposition apparatus includes a process chamber, a wafer support in the process chamber, a backplane structure having a first surface in the process chamber facing the wafer support, a target having a second surface facing the first surface and a third surface facing the wafer support, and an adhesion structure in physical contact with the backplane structure and the target. The adhesion structure has an adhesion material layer, and a spacer embedded in the adhesion material layer.

Abstract: A sputtering target comprised of a plurality of members including a target material and a base material, wherein the plurality of members includes a first member and a second member laminated to each other, wherein the first member contains Al, and the second member contains Cu, wherein at least one of the first member and the second member contains Mg, wherein the sputtering target includes an alloy layer containing Al and Cu between the first member and the second member, the alloy layer being in contact with the first member and the second member, and wherein the alloy layer further includes an Mg-containing layer containing 5.0 at % or more of Mg in at least a part of the alloy layer.

Abstract: Metal substrates comprising a colored coating and/or a protective coating disposed on at least a surface of the substrate. The colored coating can include a metal oxide coating integrally bonded to the terminal and produced by heat tinting or a titanium nitride containing material. The protective coating is derived from a material comprising one or more of aluminum oxide, silicon oxide, a superhydrophobic material, wherein the protective coating has a Scratch Resistance of at least about F, as determined by ASTM D336. Methods of making and using the coated metal substrates are also disclosed.

Abstract: A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less.

Abstract: A gas mixing method to enhance plasma includes: providing a reaction chamber; wherein the reaction chamber includes an accommodating space and the reaction chamber includes a top opening connected to the accommodating space; providing an adapter plate, and fixing the adapter plate to the reaction chamber to be arranged corresponding to the top opening; wherein the adapter plate further includes a window area communicating both sides of the adapter plate; providing a target disposed on top of the adapter plate to seal the top opening; premixing a plasma gas and an auxiliary gas into a gas mixture, and introducing the gas mixture into the accommodating space; and providing a biasing field to the accommodating space.

Abstract: The present invention relates to sputtering targets and other metal articles as well as methods of making the same. More particularly, the present invention relates to methods for forming powder metallurgy sputtering targets and other metallurgical articles made from metal powders that include spherical metal powders, and the resulting product.

Abstract: Some implementations described herein provide a shutter disc for use during a conditioning process within a processing chamber of a deposition tool. The shutter disc described herein includes a material having a wave-shaped section to reduce heat transfer to the shutter disc and to provide relief from thermal stresses. Furthermore, the shutter disc includes a deposition of a thin-film material on a backside of the shutter disc, where a diameter of the shutter disc causes a spacing between an inner edge of the thin-film material and an outer edge of a substrate support component. The spacing prevents an accumulation of material between the thin film material and the substrate support component, reduces tilting of the shutter disc due to a placement error, and reduces heat transfer to the shutter disc.

Abstract: The invention relates to the deposition of optical precision films with high uniformity, precision, particle freedom and low absorption on the substrate. For this purpose, a method and a device are proposed. The approach is the use of target materials and also possibly of surfaces in the sputtering field. Particularly high uniformity and also particularly low residual absorption are achieved with these materials. The invention is suitable for the production of optical thin-film filters, as are used for example in laser material machining, laser components, optical sensors for measuring technology, or in medical diagnostics.

Abstract: A system is described that includes a sputter target and a magnetic element array including multiple sets of magnets arranged to have a Hall-Effect region that extends along a length of the sputter target. The elongated sputtering electrode material tube is interposed between the magnetic array and an object to be deposited with a sputtered material from the sputter target. During a direct current high-power impulse magnetron sputtering operation, the system performs a depositing on a surface of the object by generating and controlling an ion and neutral particle flux by: providing a vacuum apparatus containing a sputter target holder electrode; first generating a high-power pulsed plasma magnetron discharge with a high-current negative direct current (DC) pulse to the sputter a target holder electrode; and second generating a configurable positive voltage kick pulse to the sputter target holder electrode after terminating the negative DC pulse.

Abstract: An electrical power pulse generator system and a method of the system's operation are described herein. A main energy storage capacitor supplies a negative DC power and a kick energy storage capacitor supplies a positive DC power. A main pulse power transistor is interposed between the main energy storage capacitor and an output pulse rail and includes a main power transmission control input for controlling power transmission from the main energy storage capacitor to the output pulse rail. A positive kick pulse power transistor is interposed between the kick energy storage capacitor and the output pulse rail and includes a kick power transmission control input for controlling power transmission from the kick energy storage capacitor to the output pulse rail. A positive kick pulse power transistor control line is connected to the kick power transmission control input of the positive kick pulse transistor.