Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device, wherein a portion of the shielding device and the carrier are disposed within the reaction chamber. The shielding device includes a first-shield member, a second-shield member and a driver. The driver interconnects the first-shield member and the second-shield member, for driving the first-shield member and the second-shield member to move in opposite directions. During a deposition process, the driver swings the shield members away from each other into an open state. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: A physical vapor deposition (PVD) system is disclosed. The PVD system includes a pedestal configured to hold a semiconductor wafer, a cover plate configured to hold a target, and a collimator between the pedestal and the cover plate. The collimator includes a plurality of passages configured to pass source material travelling from the cover plate toward the pedestal at an angle less than a threshold angle with respect to a line perpendicular to a surface of the pedestal facing the cover plate, where the collimator is configured to block source material travelling from the cover plate toward the pedestal at an angle greater than the threshold angle, where a first passage of the plurality of passages has a first passage length, where a second passage of the plurality of passages has a second passage length, and where the first passage length is less than the second passage length.

Abstract: A semiconductor process system includes a process chamber. The process chamber includes a wafer support configured to support a wafer. The system includes a bell jar configured to be positioned over the wafer during a semiconductor process. The interior surface of the bell jar is coated with a rough coating. The rough coating can include zirconium.

Abstract: A process kit comprises a shield and ring assembly for positioning about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall configured to surround a sputtering target and a sloped portion of a bottom wall having a substantially straight profile with gas conductance holes configured to surround the substrate support. The ring assembly comprises a cover ring having a bulb-shaped protuberance about the periphery of the ring. The bulb-shaped protuberance of the cover ring is able to block a line-of-sight between the gas conductance holes on the shield and an entrance to a chamber body cavity in the processing chamber.

Abstract: A cathode arc source comprises: a cathode target; a first magnetic field source located above the target; a second magnetic field source located below the target; and a third magnetic field source located between the first and second magnetic field sources and having an opposite polarity to the first magnetic field source; wherein the resultant magnetic field from the first, second and third magnetic field sources has zero field strength in a direction substantially normal to the target at a position above the target. The invention also provides methods of striking a cathode target and methods of depositing coatings which can be carried out using the cathode arc source described herein.

Abstract: Methods and apparatus for processing a substrate are provided herein. For example, a method for processing a substrate can includes selectively etching from a substrate disposed in the PVD chamber an exposed first layer of material, covering an underlying second layer of material, and adjacent to an exposed third layer of material, using both process gas ions and metal ions formed from a target of the PVD chamber, in an amount sufficient to expose the second layer of material while simultaneously depositing a layer of metal onto the third layer of material; and subsequently depositing metal from the target onto the second layer of material.

Abstract: The present disclosure enables high-resolution direct patterning of a material on a substrate by establishing and maintaining a separation between a shadow mask and a substrate based on the thickness of a plurality of standoffs. The standoffs function as a physical reference that, when in contact between the substrate and shadow mask determine the separation between them. Embodiments are described in which the standoffs are affixed to an element selected from the shadow mask, the substrate, the mask chuck, and the substrate chuck.

Abstract: The present disclosure provides a thin-film-deposition equipment with shielding device, which includes a reaction chamber, a carrier and a shielding device. The shielding device includes a first-shield member, a second-shield member and a driver. The first-shield member has a first-inner-edge surface disposed with a protrusion. The second-shield member has a second-inner-edge surface disposed with a cavity. The driver interconnects and drives the first-shield member and the second-shield member to sway in opposite directions. During a cleaning process, the driver swings the shield members toward each other into a shielding state for covering the carrier, such that to prevent polluting the carrier during the process of cleaning the thin-film-deposition equipment.

Abstract: A magnetron sputtering apparatus is provided. The apparatus comprises: a vacuum chamber storing a substrate; a plurality of sputtering mechanisms, each including a target having one surface facing the inside of the vacuum chamber, a magnet array, and a moving mechanism for reciprocating the magnet array between a first position and a second position on the other surface of the target; a power supply for forming plasma by supplying power to targets of selected sputtering mechanisms for film formation; a gas supplier for supplying a gas for plasma formation into the vacuum chamber; and a controller for outputting a control signal, in performing the film formation, such that magnet arrays of selected and unselected sputtering mechanisms, extension lines of moving paths of the magnet arrays thereof intersecting each other in plan view, move synchronously or are located at certain positions so as to be distinct from each other.

Abstract: The present disclosure provides a method for increased target utilization within a sputtering system. A plurality of targets are provided wherein each target is operatively connected to a central axis. An ion beam is generated within the sputtering system. The generated ion beam is directed at a first location of a first target for a first time period. Each target is moved by rotating the central axis. The generated ion beam is directed at a second location of the first target for a second time period.

Abstract: An ion milling device capable of high-speed milling is realized even for a specimen containing a material having an imide bond. Therefore, the ion milling device includes: a vacuum chamber 6 configured to hold a specimen 3 in a vacuum atmosphere; an ion gun 1 configured to irradiate the specimen with a non-focused ion beam 2; a vaporization container 17 configured to store a mixed solution 13 of a water-soluble ionic liquid and water; and nozzles 11, 12 configured to supply water vapor obtained by vaporizing the mixed solution to a vicinity of a surface of the specimen processed by the ion beam.

Abstract: Apparatus for depositing one or more variable interference filters onto one or more substrates comprises a vacuum chamber, at least one magnetron sputtering device and at least one movable mount for supporting the one or more substrates within the vacuum chamber. The at least one magnetron sputtering device is configured to sputter material from a sputtering target towards in the mount, thereby defining a sputtering zone within the vacuum chamber. At least one static sputtering mask is located between the sputtering target and the mount. The at least one static sputtering mask is configured such that, when each substrate is moved through the sputtering zone on the at least one movable mount, a layer of material having a non-uniform thickness is deposited on each said substrate.

Abstract: A method of making a thin film can include bombarding a substrate with first ions supplied from a first ion beam; and sputtering from a metal sputtering target substantially simultaneously with the bombardment to deposit a metal-ion film onto the substrate, wherein the method is performed without applied heat, and the metal sputtering target comprises one or more of a metal, a transition metal, a semi-metal, alloys thereof and combinations thereof.

Abstract: Embodiments of the present disclosure provide a substrate processing system. In one embodiment, the system includes a chamber, a target disposed within the chamber, a magnetron disposed proximate the target, a pedestal disposed within the chamber, and a first gas injector disposed at a sidewall of the chamber. The first gas injector includes a first gas channel extending through a body of the first gas injector, the first gas channel has a first gas outlet. The first gas injector also includes a second gas channel extending through the body of the first gas injector, wherein the second gas channel has a second gas outlet. The second gas channel includes a first portion, and a second portion branching off from an end of the first portion, wherein the second portion is disposed at an angle with respect to the first portion, and the first gas injector is operable to rotate about a longitudinal center axis of the body of the first gas injector.

Abstract: A feedback system for controlling properties of a single layer or multiple layer stack is applied on a substrate by means of a vacuum coating process controlled by a plurality of process controlling means. The system includes at least one monitoring device for at least implementing at least two distinct measurement techniques for determining measurement signals at each of a plurality of locations spatially distributed over the coated substrate; at least one processing unit adapted for at least receiving the measurement signals; and a controller for at least providing actuation signals for actuating the plurality of process controlling means.

Abstract: Substrate processing systems or platforms and methods configured to process substrates including of extreme ultraviolet (EUV) mask blanks are disclosed. Systems or platforms provide a small footprint, high throughput of substrates and minimize defect generation. The substrate processing system platform comprises a single central transfer chamber, a single transfer robot, a substrate flipping fixture, and processing chambers are positioned around the single central transfer chamber.

Abstract: The present application provides a method for preparing a perovskite film, and a related perovskite film, solar cell and solar cell device thereof. The preparation method may include the steps of (1) providing a target material comprising the following elements: lead, a halogen, and one or more alkali metals; (2) sputtering using the target material in step (1), where a process gas is a noble gas, optionally, argon, so as to obtain a film; (3) subjecting the film obtained in step (2) to a chemical bath treatment, wherein the chemical bath is a solution of AX, A is selected from one or more of formamidine or methylamine, and X is a halogen; and (4) sputtering on the film obtained in step (3) using a tin metal, where a process gas comprises a noble gas, optionally, a mixture of argon and a halogen gas, so as to obtain the perovskite film.

Abstract: A sputtering target comprising a target material, wherein a sputtering face of the target material has a ramp provided to reduce a thickness of the target material at a position where erosion concentrates most intensively during sputtering.

Abstract: A potassium sodium niobate sputtering target having a relative density of 95% or higher. A method of producing a potassium sodium niobate sputtering target, including the steps of mixing a Nb2O5 powder, a K2Co3 powder, and a Na2Co3 powder, pulverizing the mixed powder to achieve a grain size d50 of 100 ?m or less, and performing hot press sintering to the obtained pulverized powder in an inert gas or vacuum atmosphere under conditions of a temperature of 900° C. or higher and less than 1150° C., and a load of 150 to 400 kgf/cm2. The present invention aims to provide a high density potassium sodium niobate sputtering target capable of industrially depositing potassium sodium niobate films via the sputtering method.

Abstract: An assembly for cathodic arc deposition of a material onto an article. The assembly includes a chamber for receiving an article to be coated and a rotating target. The rotatable target has a surface from which a plasma material is ejected. An anode ring is positioned a first distance from the surface of the rotatable target. The anode ring has an opening with a central axis that is parallel to a rotational axis of the rotatable target and offset a second distance from the rotational axis. A spark device is disposed in the chamber for generating an arc on the surface of the rotatable target. The assembly configured to direct a stream of charged particles ejected from the surface of the target through the opening of the anode ring to the article to be coated.