Abstract: One object is to provide a deposition technique for forming an oxide semiconductor film. By forming an oxide semiconductor film using a sputtering target including a sintered body of a metal oxide whose concentration of hydrogen contained is low, for example, lower than 1×1016 atoms/cm3, the oxide semiconductor film contains a small amount of impurities such as a compound containing hydrogen typified by H2O or a hydrogen atom. In addition, this oxide semiconductor film is used as an active layer of a transistor.

Abstract: A recording medium production device includes a substrate positioning pin vertically movable that performs positioning to a center-hole of a substrate; a substrate holding portion that performs positioning of substrate using the substrate positioning pin to hold the substrate; a cleaner having a gas ejection portion that ejects gas toward the surface of the substrate held by the substrate holding portion, and a gas suction portion that suctions gas; and a substrate positioning pin fixing portion that can press the substrate positioning pin downward. The fixing portion is configured so as not to contact an inner circumferential side surface of the center-hole of substrate. The substrate positioning pin fixing portion descends inside the center-hole of substrate held by the substrate, and presses and fixes the substrate positioning pin. Then the cleaner performs ejection and suction of gas.