Abstract: Merged devices for transient blocking. A pass transistor is placed so that its body potential drives the gate of a depletion-mode JFET-type blocking transistor. Thus a transient which appears on an external terminal is very rapidly propagated to shut off the blocking transistor, before large numbers of carriers can be injected. Preferably a shunt device is also used to drop high potentials which may appear at the same time. This connection can be particularly useful in power or data input terminals.
Abstract: In a device having multiple power components adjacently arranged to each other, two diodes are disposed adjacent to each power component. The first diode is placed adjacent to any one of the sides of the power component, and the second diode is placed adjacent to the opposite side of the power component. The sides are opposed to the sides of adjacent power components. An overtemperature detection circuit outputs an overtemperature detection signal when outputs of the diodes both decrease under a reference voltage.