Abstract: The present invention relates to an improved method to produce Group III nitride thin film having a lower defect density, which method comprises:(a) combining under metalorganic chemical vapor deposition (MOCVD) conditions at least one Group III metalorganic compound with ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof in a molar ratio of between about 1/10000 and 2/1 of metalorganic to the ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof, at a low pressure of about 100 torr or less, to produce a first nitride layer;(b) combining under metalorganic chemical vapor deposition conditions at least one Group III metalorganic compound with ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof in a molar ratio of between about 1/10000 and 2/1 of metalorganic to the ammonia, hydrazine, nitrogen-hydrogen, or combinations thereof, at a high pressure of about 700 to 760 torr or greater for between about 5 and 60 min to produce a nitride layer having a reduced defect density and;(c)

Abstract: A process for enhanced thermal oxidation and nitridation of silicon by introduction of fluorine into the oxidation and nitridation ambients.