Patents Examined by S. Chaudhry
  • Patent number: 7311785
    Abstract: An automatic air-blown cleaning apparatus for cleaning a liquid crystal display (LCD) component in an LCD assembly process. The automatic air-blown cleaning apparatus has an assembly station for receiving and assembling the liquid crystal display component, a conveying device for delivering the liquid crystal display component to the next assembly station, and an air filtering blower provided on the conveying device. The air filtering blower sends an air flow toward the liquid crystal display component to remove residual matter from the liquid crystal display component.
    Type: Grant
    Filed: August 9, 2005
    Date of Patent: December 25, 2007
    Assignee: Au Optronics Corp.
    Inventors: I-Min Chin, Chien-Wen Lai
  • Patent number: 6491763
    Abstract: A process for treating an electronic component wherein the electronic component is exposed to a heated solvent and subsequently exposed to an ozonated process fluid. The electronic component is optionally exposed to the heated solvent by exposing the electronic component to a passing layer of heated solvent. An apparatus for treating electronic components with a heated solvent and an ozonated process fluid is also provided.
    Type: Grant
    Filed: March 13, 2001
    Date of Patent: December 10, 2002
    Assignee: Mattson Technology IP
    Inventors: Steven Verhaverbeke, Lewis Liu, Alan Walter, C. Wade Sheen, Christopher McConnell
  • Patent number: 6375756
    Abstract: A method for efficiently and completely removing a film deposited inside a film forming chamber and an in-situ cleaning method of a hot element CVD apparatus. A hot element is disposed in a chamber is heated up to a temperature of 2000° C. or higher after the chamber is exhausted. Thereafter a cleaning gas which is decomposed and/or activated by the hot element to generate an activated species that converts the deposited film into gaseous substance is introduced into the chamber.
    Type: Grant
    Filed: August 4, 2000
    Date of Patent: April 23, 2002
    Assignees: ANELVA Corporation, Japan Science and Technology Corp.
    Inventor: Keiji Ishibashi
  • Patent number: 6358329
    Abstract: The resist residue removal method removes resist residues caused at the time of formation of an aluminum wiring pattern on a semiconductor wafer. The method includes the steps of removal fluid processing, washing, and drying. The method involves forming an atmosphere within a chamber, which houses a semiconductor wafer having an exposed aluminum wiring pattern, by controlling gas flow into the chamber according to the processing step being performed. By the resist residue removal method, yield of a wiring pattern is improved by prevention of local etching of an aluminum wiring pattern, or by prevention of thinning of the aluminum wiring pattern.
    Type: Grant
    Filed: June 29, 1999
    Date of Patent: March 19, 2002
    Assignee: Mitsubishi Denki Kabushiki Kaisha
    Inventors: Seiji Muranaka, Itaru Kanno
  • Patent number: 5015302
    Abstract: A system and method for removing drag-out adhering surface treating solutions from barrels and their loads of articles in bulk after electroplating and/or chemical surface treatments and the recovery (recycling) of said solutions.
    Type: Grant
    Filed: February 28, 1990
    Date of Patent: May 14, 1991
    Inventor: Hans J. Henig